Search results

Jump to navigation Jump to search

Page title matches

Page text matches

  • ASML DUV: Edge Bead Removal via Photolithography
    (This process can easily be transferred to I-Line photoresists, using the [[Contact Align ===Photo-EBR Process===
    1 KB (207 words) - 23:06, 4 October 2022
  • NanoFab Process Group
    .../wiki.nanotech.ucsb.edu/w/index.php?title=Staff_List#Process_Group NanoFab Process Group].'' ==Process Control Calibration Procedures==
    2 KB (297 words) - 16:46, 11 September 2023
  • Nanofab Staff Internal Pages
    ==Process Group== *[[Process Group - Remote Fabrication Jobs|'''Job Tracking''']] - pages to organize an
    2 KB (338 words) - 16:10, 9 April 2024
  • Photolithography - Improving Adhesion Photoresist Adhesion
    ==HMDS Process for PR Improving Adhesion== This process tends to improve adhesion between the substrate and subsequent photoresist
    1 KB (198 words) - 12:41, 10 February 2024
  • Homepage Draft1
    *[[:Category:Wet Processing|Wet Process]] *[[:Category:Thermal Processing|Thermal Process]]
    3 KB (370 words) - 13:59, 2 November 2023
  • Main Page
    *[[:Category:Wet Processing|Wet Process]] *[[:Category:Thermal Processing|Thermal Process]]
    3 KB (375 words) - 16:13, 12 March 2024
  • Nanofab Job Postings
    *A position in the "[[Staff List#Process Group|Process Group]]", led by [[Demis D. John]]. ...p - Process Control Data#Deposition .28Process Control Data.29|Deposition: Process Control data]].
    4 KB (607 words) - 11:48, 24 April 2024
  • Wafer Scanning process Traveler
    The wafers for process calibration are ordered from a wafer supplier that sells high grade, qualit === Scan before process calibration ===
    2 KB (339 words) - 11:31, 22 April 2020
  • Process Group - Process Control Data
    ...to) [https://en.wikipedia.org/wiki/Statistical_process_control Statistical Process Control]. ...inks found on individual tool pages, in the '''''Recipes > <<tool page>> > Process Control''''' section.
    10 KB (1,497 words) - 12:03, 24 April 2024
  • Biljana Stamenic
    ...r films in PECVD#1, Advanced PECVD#2, and Unaxis) to establish statistical process control. Biljana is holding trainings on tools: GCA 6300 Stepper#1, Autoste
    1 KB (191 words) - 16:07, 29 December 2023
  • UV Ozone Reactor
    ...clean surfaces can be achieved in less than one minute. In addition, this process does not damage any sensitive device structures of MOS gate oxide. The syst
    961 bytes (145 words) - 09:17, 29 August 2023
  • Wafer Scanning/Coating Process Traveler ( combined/less detailed)
    The wafers for process calibration are ordered from SVM (<nowiki>https://www.svmi.com/</nowiki>). === Wafer Coating Process traveler ===
    3 KB (515 words) - 13:41, 20 April 2020
  • Chemical-Mechanical Polisher (Logitech)
    ...is often unique in geometry and material combinations so that independent process development is required for most CMP applications.
    1 KB (148 words) - 11:03, 30 August 2022
  • RIE5 - Standard Operating procedure (Cortex Software)
    == Running a process on RIE #5 == # Choose the '''Process Menu''' located on bottom left corner of the screen. It's the one with the
    2 KB (377 words) - 14:09, 17 October 2018
  • Automated Coat/Develop System (S-Cubed Flexi)
    ...ns them to the cassette. The system is recipe driven with a high degree of process control and minimal backside contamination, and coats photoresists with low ...full size substrates are allowed on this system. The S3 Coater is still in process development and not open for general use.
    2 KB (340 words) - 14:41, 8 November 2022
  • Demis D. John
    |position = Process Scientist Manager ...uestion about your fabrication process, or are designing a new fabrication process
    3 KB (434 words) - 10:22, 18 June 2020
  • Tube Furnace (Tystar 8300)
    Each process tube can accomodate up to one hundred 8” wafers per cycle. We have boats ==Process Information==
    4 KB (580 words) - 11:15, 7 March 2024
  • Molecular Vapor Deposition
    *[[MVD - Wafer Coating - Process Traveler|Wafer Coating - Process Traveler]]
    1 KB (182 words) - 10:34, 30 August 2022
  • Nick test
    ...re-defined thicknesses. Custom programs for dielectric stacks or different process parameters can be written and saved. *[[PECVD1 Wafer Coating Process|Wafer Coating Process Traveler]]
    3 KB (387 words) - 22:15, 23 August 2021
  • ICP-PECVD (Unaxis VLR)
    *[[Unaxis wafer coating procedure]] - ''process flow for achieving high-quality coatings.'' == Process Control Data ==
    3 KB (454 words) - 10:35, 23 May 2023
  • Staff List
    ==Process Group== ...es, recipe development, and some direct tool training and maintenance. The Process Group helps to ensure that equipment is providing the expected processing c
    5 KB (664 words) - 09:42, 11 March 2024
  • PECVD Recipes
    ...7sHNAVvo/edit#gid=1270764394 PECVD 1 Process Control Plots] - Plots of all process control data=== ...G1KvtXqqTRDBI7sHNAVvo/edit#gid=0 SiO<sub>2</sub><nowiki> [PECVD 1] Current Process Control Data</nowiki>]
    14 KB (2,130 words) - 10:28, 20 December 2023
  • PECVD 2 (Advanced Vacuum)
    *[[Wafer Coating Process Traveler]] *For particle counting method, see the [[Wafer scanning process traveler|Surfscan Scanning Procedure]]
    2 KB (284 words) - 10:30, 30 August 2022
  • Foong Fatt
    |position = Process Scientist
    260 bytes (32 words) - 11:24, 1 February 2023
  • Logitech WBS7 - Procedure for Wax Mounting with bulk Crystalbond Stick
    *Enter the process settings: **[setup] -> [Process Control]
    3 KB (531 words) - 10:52, 26 April 2023
  • Lift-Off with DUV Imaging + PMGI Underlayer
    This process is intended for Deep-UV Exposure on the ASML DUV Stepper. PMGI is used as ===Process Limits===
    4 KB (608 words) - 16:32, 27 April 2022
  • PECVD 1 (PlasmaTherm 790)
    ...re-defined thicknesses. Custom programs for dielectric stacks or different process parameters can be written and saved. *[[PECVD1 Wafer Coating Process|Wafer Coating Process Traveler]]
    3 KB (388 words) - 10:30, 30 August 2022
  • Vapor HF Etch (uETCH)
    ...is a microscope attached to this tool, with which you can monitor the etch process of your sample. You can change the number of etch cycles during a run, whic
    1 KB (257 words) - 16:41, 30 January 2014
  • Stepper 1 (GCA 6300)
    ...ocesses. AZnLOF5510 for 1.0um and AZnLOF 2020 for 1.5-3 um negative resist process. Shipley LOL-2000 is also used as an underlayer for high resolution lift-of *Lens: Olympus 2142: NA = 0.42; Depth of field = 1.2 um for 0.7 um process
    5 KB (693 words) - 17:43, 12 February 2024
  • Plasma Clean (YES EcoClean)
    ...~120°C to 200°C by controlling the sample height via the lift pins during process, while being exposed to ICP-cracked oxygen to remove organic materials. ...  Heat is used to increase reaction rate.  Treat this as a purely chemical process, accelerated by heat (Arrhenius plot - rate goes up exponentially with temp
    3 KB (497 words) - 12:31, 22 November 2023
  • Rapid Thermal Processor (SSI Solaris 150)
    ...ermal Anneal” (RTA) system for R&D and pre-production. The Solaris 150 can process up to 152.4mm substrates at a temperature range from RT- 1200 degrees. The The Solaris uses a unique PID process controller that ensures accurate temperature stability and uniformity. The
    2 KB (248 words) - 08:36, 8 December 2023
  • XeF2 Etch (Xetch)
    The XeF<sub>2</sub> etch process is a purely chemical one and usually results in a rough etched surface. The ...is a microscope attached to this tool, with which you can monitor the etch process of your sample. You can change the number of etch cycles during a run, whic
    2 KB (323 words) - 15:03, 30 October 2023
  • Rapid Thermal Processor (AET RX6)
    ...ntrol software has been added to the system by Sedona Visual Controls. All process parameters are monitored and stored. Typical anneals are done for: ohmic co *Windows-based process monitoring and control software by Sedona Visual Controls
    2 KB (290 words) - 08:58, 15 June 2023
  • Surface Analysis (KLA/Tencor Surfscan)
    *[[Wafer scanning process traveler|Wafer Particle Count - Process Traveler]]
    3 KB (357 words) - 18:02, 2 February 2024
  • Ning Cao
    Processing all kinds of semiconductor devices. with deep process experience: lithography, dry etch, film depositions, etc.
    899 bytes (108 words) - 12:18, 24 March 2020
  • Wafer Coating Process Traveler1
    ...u could leave and come back when all runs are finished. You should monitor process at the very beginning to make sure there are no any issues with the run. ...u could leave and come back when all runs are finished. You should monitor process at the very beginning to make sure there are no any issues with the run.
    4 KB (711 words) - 13:32, 30 March 2020
  • Focused Ion-Beam Lithography (Raith Velion)
    • SEM imaging for in-situ process control, inspection and sample preparation. * Process control for rapid prototyping
    2 KB (285 words) - 09:56, 15 March 2021
  • Dry Etching Recipes
    ...>[[Process Group - Process Control Data#Etching .28Process Control Data.29|Process Control Data]]</u>=== ...nked page]] for [https://en.wikipedia.org/wiki/Statistical_process_control process control data] (dep rate/stress etc. over time), for a selection of often-us
    14 KB (1,875 words) - 15:31, 7 February 2024
  • Stepper 2 (AutoStep 200)
    *Lens: Olympus 2145: NA = 0.45; Depth of field = 1.2 um for 0.6 um process ==Process Information==
    6 KB (893 words) - 17:44, 12 February 2024
  • Tom Reynolds
    ...nior Development Engineer to finish the new facilities and install all the process equipment into the current Engineering Science Building Nanofab. ...nues to offer assistance in the operations of the lab while working on new process equipment selection and installs. He is working on several lab projects at
    2 KB (333 words) - 08:29, 7 August 2020
  • Vacuum Deposition Recipes
    ...cess Group - Process Control Data#Deposition .28Process Control Data.29|<u>Process Control Data</u>]]=== ...ocess Control Data#Deposition .28Process Control Data.29|linked page]] for process control data (calibration data over time, such as dep. rate, refractive ind
    24 KB (3,097 words) - 15:44, 7 July 2022
  • Deposition Data - temporary 2021-12-15
    ...G1KvtXqqTRDBI7sHNAVvo/edit#gid=0 SiO<sub>2</sub><nowiki> [PECVD 1] Current Process Control Data</nowiki>] ...vo/edit#gid=98787450 Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 1] Current Process Control Data</nowiki>]
    17 KB (2,624 words) - 00:07, 16 December 2021
  • MVD - Wafer Coating - Process Traveler
    Use vapor coating in a clean-dry environment process as follows:
    775 bytes (111 words) - 13:38, 26 July 2020
  • S-Cubed Flexi - Operating Procedure
    *Make sure system is not running a process - Lot view shows no wafers or batches running. #After 5min bake, need +/-2°C before running process.
    2 KB (396 words) - 14:39, 8 November 2022
  • Unaxis wafer coating procedure
    * You should monitor process at the very beginning to make sure there are no any issues with the run. * You should monitor process at the very beginning to make sure there are no any issues with the run.
    5 KB (801 words) - 21:29, 12 August 2020
  • Oxford ICP Etcher (PlasmaPro 100 Cobra)
    *Windows-based Cortex software control of process and wafer handling *[[ICP Etching Recipes#Process Control Data .28Oxford ICP Etcher.29|Process Control Data]] - Calibration etch data for verifying tool performance over
    4 KB (532 words) - 23:33, 4 May 2023
  • IR Thermal Microscope (QFI)
    ...n semiconductor circuits. Such hot spot sites often mark the location of a process fault or damaged location of a circuit, such as a short circuit. ...iconductor circuits. Such recombination sites often mark the location of a process fault or damaged location of a circuit. The NIR cameral operates at 400nm -
    3 KB (376 words) - 09:37, 30 August 2022
  • ASML Stepper 3 Standard Operating Procedure
    ...pecially important for high-resolution layers. Make sure your entire litho process remains constant (spins, bakes, develop times etc.) between the FEA and you ...s range. This allows your process to work even if the focus or some other process varies.
    9 KB (1,431 words) - 13:59, 23 April 2023
  • ASML 5500: Choose Marks for Prealignment
    # Go to '''''Layer Layout > Process Data'''''
    1 KB (186 words) - 14:17, 17 July 2018
  • Fluorine ICP Etcher (PlasmaTherm/SLR Fluorine ICP)
    ...stem is fully computer controlled in all aspects of the pumping cycles and process control, and can be programmed by the user. *Windows-based computer control of process and wafer handling
    4 KB (603 words) - 13:09, 22 November 2023
  • Stepper 3 (ASML DUV)
    ...ed patterns from multiple masks/reticles in a single session, allowing for process optimization of large vs. small features in a single lithography. ...=Lithography_Recipes#Photolithography_Recipes PhotoLith. Recipes] for full process info & links to PR datasheets.''
    9 KB (1,400 words) - 13:08, 3 May 2024
  • Plasma Clean (Gasonics 2000)
    ...ean]] and [[ICP Etch 1 (Panasonic E646V)|Panasonic ICP #1 Ashing]] are the process replacements.''' ''-- DJ 2023''
    1 KB (159 words) - 12:12, 23 February 2024
  • ICP Etch 2 (Panasonic E626I)
    *[[ICP Etching Recipes#Process Control Data .28Panasonic 2.29|Process Control Data]]
    3 KB (452 words) - 15:19, 7 February 2024
  • UV Ozone Quick Start
    # Enter the "Total time" for the process and press the "E" button (i.e. If the value for #1 is set to 5 minutes and
    989 bytes (187 words) - 15:40, 17 July 2018
  • Atomic Layer Deposition Recipes
    ==Oxford FlexAL Process Notes== "Thermal" ALD, considered the most standard process. Can be slower due to time for reaction to proceed.
    7 KB (1,104 words) - 10:27, 15 June 2023
  • Intellemetrics Laser Etch Monitor Procedure for Panasonic ICP Etchers
    # Run your etch in "Process Test" Mode: ### [Process Test]
    6 KB (876 words) - 14:23, 13 June 2019
  • Sputter 4 (AJA ATC 2200-V)
    ...</sub>) achieving < 5 E-8T ultimate pressure. A VAT gate valve is used for process pressure control independent of gas flow. *Automatic wafer loading and recipe driven process control.
    3 KB (507 words) - 10:37, 30 August 2022
  • Lift-Off with I-Line Imaging Resist + LOL2000 Underlayer
    This process uses LOL2000 as the underlayer, underneath an SPR955 imaging resist layer. ==Suggested Process for Liftoff==
    5 KB (854 words) - 14:58, 31 August 2022
  • HF Vapor Etch
    ...mity, and being most compatible with VHF), and N<sub>2</sub> gases and can process small sample(s) (on a 8<sup>"</sup> Si carrier wafer) up to an 8<sup>"</sup
    1 KB (221 words) - 15:51, 31 January 2014
  • Oxford ICP Etcher - Process Control Data
    ==Process Control Data - InP Ridge Etch (Oxford ICP Etcher)==
    8 KB (1,214 words) - 15:38, 12 January 2023
  • Vapor HF Etch
    ...mity, and being most compatible with VHF), and N<sub>2</sub> gases and can process small sample(s) (on a 8<sup>"</sup> Si carrier wafer) up to an 8<sup>"</sup
    1 KB (240 words) - 10:53, 30 August 2022
  • Thermal Processing Recipes
    For Tube #2, Silicon wafer cleaning, the following process is recommended: .... oxidation at shorter times, please contact [[Tony Bosch]] or the NanoFab process Group for more information.
    5 KB (713 words) - 16:24, 30 January 2024
  • ICP Etch 1 (Panasonic E646V)
    *[[ICP Etching Recipes#Process Control Data .28Panasonic 1.29|Process Control Data]]
    4 KB (697 words) - 15:18, 7 February 2024
  • Glossary
    ...istic and one or two control limits. A control chart is used to judge if a process is in control and as an aid in achieving and maintaining statistical contro ...ecial causes are affecting the process. Control limits are calculated from process data.
    12 KB (2,034 words) - 09:25, 15 April 2020
  • Sputtering Recipes
    ...ease the chamber pressure just for the ignition step, then drop dow to the process pressure in the PreClean and/or Dep step. For example, set the ignition ste ..._Process_-_Ning_Cao_2019-06.pdf Ruthenium Hardmask for SiO2 Etching - Full Process Traveler] by Ning Cao
    16 KB (2,290 words) - 21:36, 21 September 2023
  • ICP Etching Recipes
    ==Process Control Data (DSEiii)== *[//wiki.nanotech.ucsb.edu/wiki/images/4/4a/10-Si_Etch_Bosch_DSEIII.pdf Bosch Process Recipe and Characterization] - Standard recipe on the tool.
    28 KB (4,356 words) - 12:49, 7 May 2024
  • Stepper 2 (AutoStep 200) Operating Procedures
    #Repeat process until satisfied with the alignment. You can obtain better than 0.2 um alig #Repeat process until satisfied with the alignment.
    5 KB (957 words) - 16:24, 8 January 2024
  • PECVD1 Wafer Coating Process
    ...SiO2 deposition at 250C in PECVD#1. Instructions bellow explain how to run process (seasoning, deposition, cleaning).
    2 KB (270 words) - 13:16, 10 December 2020
  • Autostep 200 Mask Making Guidance
    .... Squares and circles. These have a separate spec due to the manufacturing process, so make sure to choose the appropriate grade of photomask with this in min ...ance. Local alignment can be used but needs some characterization for each process.
    7 KB (1,123 words) - 14:44, 4 January 2024
  • Stepper Recipes
    ...ed off with DI water before the PEB. CEM generally improves resolution and process tolerance at the expense of higher exposure time. ...ed off with DI water before the PEB. CEM generally improves resolution and process tolerance at the expense of higher exposure time.
    17 KB (2,294 words) - 17:03, 21 March 2024
  • Video Training: Hosting with Zoom and GacuhoCast/Panopto
    ...hort hands-on followup trainings for the fragile or sensitive parts of the process (eg. Wafer load/unload etc.).
    2 KB (365 words) - 13:08, 10 December 2020
  • ICP-Etch (Unaxis VLR)
    ** ''Includes Process Control Data for InP etching.''
    2 KB (313 words) - 16:31, 29 September 2022
  • DSEIII (PlasmaTherm/Deep Silicon Etcher)
    *Windows-based Cortex software control of process and wafer handling **Realized etch rates (including passivation steps) for Bosch process of >8 um / min. Selectivity to resist > 80:1 for low aspect ratio.
    5 KB (770 words) - 15:17, 15 February 2024
  • IR Aligner (SUSS MJB-3 IR)
    *For processes using this tool please go to the contact lithography process page
    2 KB (328 words) - 11:56, 7 August 2020
  • Stepper 2 (Autostep 200) - Piece vs. Wafer Programming Differences
    ...he left objective. Align left objective to the left alignment mark. Repeat process until you are satisfied with alignment. You should see the same amount of t
    3 KB (519 words) - 14:38, 11 January 2024
  • Lithography Recipes
    #**''Substrate/surface materials/pattern size can affect process parameters. Users may need to run Focus/Exposure Arrays/Matrix (FEA's/FEM's ...s links to starting recipes. Substrates and patterns play a large role in process parameters.''
    23 KB (3,174 words) - 12:37, 9 May 2024
  • Autostep 200 Troubleshooting and Recovery
    #If you have been running the same process and now have issues, run SETUP from the : prompt, following the instruction
    2 KB (378 words) - 16:55, 31 January 2022
  • ASML Stepper 3 Dicing Guide Programming
    * Determine a lithography step in the fabrication process during which the addition of dicing guides (crosses) would be acceptable an
    3 KB (430 words) - 11:07, 30 January 2021
  • GCA 6300 Mask Making Guidance
    ...ance. Local alignment can be used but needs some characterization for each process. ...see whether the focus or exposure needs some tweaking for your particular process.
    10 KB (1,725 words) - 14:11, 22 September 2023
  • Sputter 5 (AJA ATC 2200-V)
    ...bo pump achieving < 5 E-8T ultimate pressure. A VAT gate valve is used for process pressure control independent of gas flow. Flow rates are controlled with st
    3 KB (413 words) - 15:50, 16 September 2022
  • Stepper 1 (GCA 6300) - Standard Operating Procedure
    # Repeat process until satisfied with the alignment.  You can obtain better than 0.2 um ali # Repeat process until satisfied with alignment.
    15 KB (2,499 words) - 09:42, 19 March 2020
  • Old Deposition Data - NastaziaM 2021-11-22
    ...G1KvtXqqTRDBI7sHNAVvo/edit#gid=0 SiO<sub>2</sub><nowiki> [PECVD 1] Current Process Control Data</nowiki>] ...vo/edit#gid=98787450 Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 1] Current Process Control Data</nowiki>]
    36 KB (5,386 words) - 09:31, 14 December 2021
  • RIE 2 (MRC)
    RIE of InP and related compounds can be achieved with a hydride-based process chemistry of methane/hydrogen with an etching mechanism due to a "reverse"
    3 KB (409 words) - 07:55, 21 July 2023
  • Sputter 3 (AJA ATC 2000-F)
    ...E-8 T ultimate pressure. A VAT adaptive pressure control valve is used for process pressure control independent of gas flow. Substrates are clip mounted onto
    3 KB (479 words) - 10:36, 30 August 2022
  • Wafer scanning process traveler
    The wafers for process calibration are ordered from a wafer supplier that sells high grade, qualit ...re ''before'' the process step, and subtract that value from the ''after'' process value. If your ''before'' measurement shows high (eg. >200 particles), do
    33 KB (5,424 words) - 17:05, 4 January 2024
  • E-Beam Evaporation Recipes
    ! width="45" bgcolor="#D0E7FF" align="center" |'''Process Gain, A/sec/%pwr''' ! width="45" bgcolor="#D0E7FF" align="center" |'''Process Gain, A/sec/%pwr'''
    8 KB (959 words) - 11:59, 25 October 2022
  • Frequently Asked Questions
    ...e and click on the appropriate entity (universtiy/company etc.) to see the process and paperwork needed for your staff to access our lab in-person. The [http ...ood issues etc. Please do not call this number for problems with a single process tool that only affects a few users, instead see above.
    25 KB (4,202 words) - 20:37, 13 May 2024
  • CAIBE (Oxford Ion Mill)
    The Ion Mill system is clustered with 2 Oxford ALD systems, allowing the process flexibility of etching followed by ALD passivation or metalization without
    4 KB (569 words) - 09:47, 21 December 2023
  • Calculators + Utilities
    ...owers ([https://en.wikipedia.org/wiki/Manufacturing_execution_system MEC], process documentation+tracking) ...pedia.org/wiki/Design_of_experiments DOE] spreadsheets - how to organize a process development experiment according to the scientific method.
    16 KB (2,392 words) - 21:28, 15 May 2024
  • Programming a Job
    #'''JOB COMMENT''': Input a job comment (for example: “TEST123 process”). ...be only needed if wafer shrinkage or expansion has occurred in a previous process step)
    13 KB (2,278 words) - 10:36, 20 March 2020
  • Troubleshooting and Recovery
    3) Verify that your wafer is not bowed (i.e. under stress from some process)
    4 KB (719 words) - 09:47, 7 May 2021
  • IBD: Calibrating Optical Thickness
    [[category:Process]]
    5 KB (758 words) - 10:19, 9 March 2024
  • Packaging Recipes
    ...ne a dicing job. This will ensure you have thought about the entire dicing process.
    10 KB (1,597 words) - 11:18, 1 May 2024
  • GCA 6300 training manual -old instructions
    3) Input a job comment such as “HBT-1 process” ...only be needed if wafer shrinkage or expansion has occurred in a previous process step. Hitting enter without entering a value here results in 0 being used.
    35 KB (6,172 words) - 08:49, 23 March 2020
  • Lab Rules backup
    ...process should include the goals of the process, and the mechanics of the process in reasonable detail. The Nanofab manager will determine if the material w ...If using a non-standard lithography chemicals, please provide the MSDS and process instructions to the laboratory manager for direction in this matter.
    34 KB (5,514 words) - 11:07, 3 August 2018
  • Wet Benches
    ...be dispensed into glassware using pipets connected to small bottles in the process wells at the back of the bench. All processes are done in user-supplied gla
    13 KB (1,931 words) - 13:24, 21 March 2024
  • Oxygen Plasma System Recipes
    *Process notes: Make sure to PR-protect the underside, ''and'' the bevel/wafer edge,
    6 KB (952 words) - 13:23, 15 May 2024
  • ASML Stepper 3 - UCSB Test Reticles
    ...ions. You could just choose one near the center of the plate to test your process, or you could choose a chart that is in a similar location as the pattern y
    10 KB (1,194 words) - 09:35, 1 May 2024
  • Laser Etch Monitoring
    ..." or "End Step" when appropriate laser monitor trace is reached. Wait for process to complete any final steps.
    8 KB (1,293 words) - 15:09, 6 December 2023
  • Services
    *You will work directly with [[Demis D. John|Demis]] or [[Staff List#Process Group|his staff]] to schedule the work, if the project is accepted.
    10 KB (1,453 words) - 21:55, 9 January 2024

View (previous 100 | next 100) (20 | 50 | 100 | 250 | 500)

Retrieved from "https://wiki.nanofab.ucsb.edu/wiki/Special:Search"