Difference between revisions of "Test Data of etching SiO2 with CHF3/CF4-ICP1"

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|1.35
 
|1.35
 
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|[https://www.nanotech.ucsb.edu/wiki/images/b/b1/I11901.pdf]
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|[https://wiki.nanotech.ucsb.edu/wiki/images/b/b1/I11901.pdf]
 
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|5/29/2019
 
|5/29/2019
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|1.41
 
|1.41
 
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|[https://www.nanotech.ucsb.edu/wiki/images/c/c6/I11903.pdf]
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|[https://wiki.nanotech.ucsb.edu/wiki/images/c/c6/I11903.pdf]
 
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|1/13/2020
 
|1/13/2020

Revision as of 17:36, 6 April 2020

ICP#1: 0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec
Date Sample# Etch Rate (nm/min) Etch Selectivity (SiO2/PR) Averaged Sidewall Angle (o) SEM Images
1/28/2019 I11901 110 1.35 [1]
5/29/2019 I11903 105 1.41 [2]
1/13/2020 I12001 78.0 1.06 [3]
Rate on 1/13/2020 is low by ~20%, so chamber was wet-cleaned on 1/21/2020. Data below for 1/23 shows rate returned to "normal".
1/23/2020 I12002 109 1.16 [4]
2/28/2020 I12003 119 1.17 56.6 [5]
Sidewall profile on 2/28/2020 etches is slanted, chamber will be wet-cleaned on 3/2/2020 and re-tested.
3/3/2020 I12004 110 1.05 [6]