Difference between revisions of "Sputtering Recipes"

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*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dFRJLUZUdXB4WFA1S1BMMWQ4WndpTWc&usp=drive_web#gid=sharing SiO<sub>2</sub> Data March 2014]
 
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=sharing SiO<sub>2</sub> Data March 2014]
 
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dGNyV083bmpzMjZpZ0JFVWhoOUpaN3c#gid=0=sharing SiO<sub>2</sub> Thickness uniformity 2014]
 
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dGNyV083bmpzMjZpZ0JFVWhoOUpaN3c#gid=0=sharing SiO<sub>2</sub> Thickness uniformity 2014]
   

Revision as of 16:46, 1 April 2014

Back to Vacuum Deposition Recipes.

Sputter 1 (Custom)

Sputter 2 (SFI Endeavor)

Al Deposition (Sputter 2)

AlNx Deposition (Sputter 2)

Au Deposition (Sputter 2)

TiO2 Deposition (Sputter 2)

Sputter 3 (AJA ATC 2000-F)

The recipes below are given as starting points from data obtained in the nanofab. For critical depositions, calibrations are recommended.

Material P(mT) Pow(W) Sub(W) T(C) Ar N2 O2 Height-Tilt Rate(nm/min) Stress(MPa) Rs(uOhm-cm) n@633nm k@633nm Data Below Comment
XXX XXX XXX XXX XXX XXX XXX XXX XXX XXX XXX XXX XXX XXX XXX XXX


Ni and Ta Deposition (Sputter 3)

Sputter 4 (AJA ATC 2200-V)

The recipes below are given as starting points from data obtained in the nanofab. For critical depositions, calibrations are recommended.

Material P(mT) Pow(W) Sub(W) T(C) Ar N2 O2 Height-Tilt Rate(nm/min) Stress(MPa) Rs(uOhm-cm) n@633nm k@633nm Data Below Comment
W 3 300 0 50 45 0 0 H2.75-T5 11.5 -150 to 150 11 - - Yes Jeremy Watcher
TiW 4.5 300 0 75 45 0 0 H2.75-T5 9.5 -150 to 150 60 - - Yes 10%Ti by Wt

W-TiW Deposition (Sputter 4)

Sputter 5 (Lesker AXXIS)

Ion Beam Deposition (Veeco NEXUS)

IBD Calibrations Spreadsheet - Records of historical film depositions (rates, indices), Uniformity etc.

All users are required to enter their calibration deps (simple test deps only)

SiO2 deposition (IBD)

  • Deposition Rate: ≈5.6 nm/min (users must calibrate this prior to critical deps)
  • Refractive Index: ≈1.487
  • Stress ≈ -387MPa (compressive)

Si3N4 deposition (IBD)

Ta2O5 deposition (IBD)



=sharing SiO2 Data March 2014]



  • Refractive Index ≈ 2.10
  • Rate ≈7.8nm/min (users must calibrate this prior to critical deps)
  • Stress ≈ -140MPa (compressive)

TiO2 deposition (IBD)