Difference between revisions of "PECVD Recipes"

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{{recipes|Vacuum Deposition}}
 
{{recipes|Vacuum Deposition}}
 +
 
=[[PECVD 1 (PlasmaTherm 790)]]=
 
=[[PECVD 1 (PlasmaTherm 790)]]=
*[https://docs.google.com/spreadsheets/d/1a0XrY6HuJ6L9niThZYI-u4XH69Hnbe3jkm1qKmrR8Rg/edit#gid=sharing Particulates in PECVD#1 2015]
 
*[https://docs.google.com/spreadsheets/d/1YNiof68Veeh08s_NtG5aCWUXW7GWDDU00HAimV_l8_g/edit#gid=sharing Particulates in PECVD#1 2017]
 
== SiN deposition (PECVD #1)  ==
 
*[[media:New PECVD1-SiO2-standard recipe 2014 SiO2 standard recipe.pdf|SiN Standard Recipe]]
 
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEN6LV93LXlnbUhIWU1adVZWMWlXYnc&usp=drive_web#gid=sharing SiN Data 2014]
 
*[https://docs.google.com/spreadsheets/d/1phx1WficlUEg0xSahaAq4zrRk6m9Eb0ausO8wcAmXqs/edit#gid=sharing SiN Data 2015]
 
*[https://docs.google.com/spreadsheets/d/1VNSNTqnbE4SFk0HyhBAy3GJzi0jRQEs8cgk1v2_Uam8/edit#gid=sharing SiN Data 2016]
 
*[https://docs.google.com/spreadsheets/d/1TG1X2wpl2fWaHEtAHtpZFBVSCk1BQeGJQ8LA2M2qBJ0/edit#gid=sharing SiN Data 2017]
 
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dElmTXZyOEZsOFdrMVhNLWpKXzVmNWc&usp=sharing SiN 1000A Thickness uniformity 2014]
 
*[https://docs.google.com/spreadsheets/d/1-pET1Eojooso5UHk90W-5uYByDDdrCyRnggqewxTmVg/edit#gid=sharing SiN 1000A Thickness uniformity 2015]
 
*[https://docs.google.com/spreadsheets/d/1V_-KzsdR-2tSnJGtUdQWokmnNIY949t0vdQOp7RfCgc/edit#gid=sharing SiN 1000A Thickness uniformity 2016]
 
*[https://docs.google.com/spreadsheets/d/1tM-a4VBEqpxr2G8PGGLTbsR6BQBmvqXNRBw0mikAUS0/edit#gid=sharing SiN 1000A Thickness uniformity 2017]
 
  
== SiO<sub>2</sub> deposition (PECVD #1) ==
+
===[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=1270764394 PECVD 1 Plots] - SiO2, SiN and Particulate Count===
*[[media:New PECVD1-SiN-standard recipe 2014 SiN standard recipe.pdf|SiO<sub>2</sub> Standard Recipe]]
+
 
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEw0bjFEdTF2SUhRa25Ca0d0SzBha3c&usp=drive_web#gid=sharing SiO<sub>2</sub> Data 2014]
+
==SiO<sub>2</sub> deposition (PECVD #1)==
*[https://docs.google.com/spreadsheets/d/1JWNUcH8l90xif-0BhYKJee9nXxE4hnvvp6N2NtZLYXY/edit#gid=sharing SiO<sub>2</sub> Data 2015]
+
 
*[https://docs.google.com/spreadsheets/d/1F2pfsVnbUgaE9tsm8HZMlY6cyt-nhui0IpvGc6udhDU/edit#gid=sharing SiO<sub>2</sub> Data 2016]
+
*[https://docs.google.com/spreadsheets/d/1uqpg3sirsRbXdTFlxZ6_k3t0ovP0MtpFtICjpH0-prs/edit#gid= SiO<sub>2</sub><nowiki> [PECVD 1] Standard Recipe</nowiki>]
*[https://docs.google.com/spreadsheets/d/1MblK5Zr5Skfw0s9Hdhqr_cCwN-nCgM-ofZnsAyvVRq8/edit#gid=sharing SiO<sub>2</sub> Data 2017]
+
*[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=0 SiO<sub>2</sub><nowiki> [PECVD 1] Current Process Control Data</nowiki>]
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dDQ3VEtZQVRpdVdlbGtIZHpTNmFzNmc&usp=drive_web#gid=sharing SiO<sub>2</sub> 1000A Thickness uniformity 2014]
+
*[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=1503619544 SiO<sub>2</sub><nowiki> [PECVD 1] Historical Data</nowiki>] - Oct. 2021 and earlier
*[https://docs.google.com/spreadsheets/d/1NQy-ADou6f2NBU-9jZG8KME1lOz0X5mh6HZV9_jPGes/edit#gid=sharing SiO<sub>2</sub> 1000A Thickness uniformity 2015]
+
 
*[https://docs.google.com/spreadsheets/d/1WUCm_dWpxKTjfFf1rNfLuxvwMxsyCYON_OZ3gb50L_s/edit#gid=sharing SiO<sub>2</sub> 1000A Thickness uniformity 2016]
+
==SiN deposition (PECVD #1)==
*[https://docs.google.com/spreadsheets/d/1dpC_AkPD-etIH6fVuQqLfd4UMNQCEtcqhvmBpwbEncE/edit#gid=sharing SiO<sub>2</sub> 1000A Thickness uniformity 2017]
+
 
 +
*[https://docs.google.com/spreadsheets/d/1DGU745SeunYz4sLs1LpGKbtOYX-tQyBHEvVYcMxHRKE/edit#gid= Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 1] Standard Recipe</nowiki>]
 +
*[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=98787450 Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 1] Current Process Control Data</nowiki>]
 +
*[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=604790654 Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 1] Historical Data</nowiki>] - Oct. 2021 and earlier
 +
 
 +
==Low Stress Si<sub>3</sub>N<sub>4</sub> (PECVD#1)==
 +
 
 +
*[https://wiki.nanotech.ucsb.edu/wiki/images/4/4a/New_PECVD1-LS_SIN-Turner05recipe_2014_LS_SIN_recipe.pdf Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 1] Standard Recipe</nowiki>]
 +
*[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=1515630363 Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 1] Current Process Control Data</nowiki>]
 +
*[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=934830479 Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 1] Historical Data</nowiki>] - 2021-10 and earlier
  
 +
==SiO<sub>x</sub>N<sub>y</sub> deposition (PECVD #1)==
  
==  OTHER recipes: LS SiN  and SiO<sub>x</sub>N<sub>y</sub> deposition (PECVD #1)  ==
+
*[https://wiki.nanotech.ucsb.edu/wiki/images/2/24/New_PECVD1-LS_SION-recipe_2014_LS_SION_recipe.pdf SiO<sub>x</sub>N<sub>y</sub> Standard Recipe]
<!-- Placeholders - Not uploaded yet-->
 
*[[media:New PECVD1-LS SIN-Turner05recipe 2014 LS SIN recipe.pdf|LS SiN Standard Recipe]]
 
*[https://docs.google.com/spreadsheets/d/1Joz0az9TGZWQc4CiMQJZzLBbNFbx_hH2Oc0B4NNJmYk/edit#gid=sharing LS SiN Data  2014]
 
*[https://docs.google.com/spreadsheets/d/1xIzc2CufRYNSfAtsOXpw3IzHreeu42BWrLBV0kzP6kA/edit#gid=sharing LS SiN 1000A Thickness uniformity 2014]
 
*[[media:New PECVD1-LS SION-recipe 2014 LS SION recipe.pdf|SiO<sub>x</sub>N<sub>y</sub> Standard Recipe]]
 
 
*[https://docs.google.com/spreadsheets/d/1rixyzAAq6q08M5OwvZiDVoh3K8B566XKM-UZAQIAnsg/edit#gid=sharing SiO<sub>x</sub>N<sub>y</sub> Data 2014]
 
*[https://docs.google.com/spreadsheets/d/1rixyzAAq6q08M5OwvZiDVoh3K8B566XKM-UZAQIAnsg/edit#gid=sharing SiO<sub>x</sub>N<sub>y</sub> Data 2014]
 
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEttR2JSTkRoamR0SUZ4bE5QUW9uS2c&usp=sharing SiO<sub>x</sub>N<sub>y</sub>1000A Thickness uniformity 2014]
 
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEttR2JSTkRoamR0SUZ4bE5QUW9uS2c&usp=sharing SiO<sub>x</sub>N<sub>y</sub>1000A Thickness uniformity 2014]
 +
 +
==Standard Cleaning Procedure (PECVD #1)==
 +
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:
 +
 +
#Wet cleaning (start cleaning by using a cleanroom wipe sprayed with DI. Wipe chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA. )
 +
#Load the recipe for cleaning "CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding a required time for cleaning.
 +
#
 +
 +
{| class="wikitable"
 +
|+Table of Cleaning Times
 +
!Film Dep'd
 +
!Cleaning Time
 +
|-
 +
|SiO<sub>2</sub>
 +
|TBD
 +
|-
 +
|Si<sub>3</sub>N<sub>4</sub>
 +
|TBD
 +
|-
 +
|SiOxNy
 +
|Same as XYZ
 +
|}
 +
 +
#
 +
 +
===[https://wiki.nanotech.ucsb.edu/w/images/7/72/PECVD1-cleaning.png Standard Cleaning Recipe (PECVD#1): "CF4/O2 Clean"]===
 +
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time.  The recipe is set up so that '''it will pop up a window for the cleaning time''' upon running the recipe - you do not need to edit the recipe before running it.
  
 
=[[PECVD 2 (Advanced Vacuum)]]=
 
=[[PECVD 2 (Advanced Vacuum)]]=
*[https://docs.google.com/spreadsheets/d/1kj0SWxRpnPRoGld8k3sW-3yK1iPm3buTkvlJSN5YPV4/edit#gid=sharing Particulates in Advanced PECVD#2 2015 ]
 
*[https://docs.google.com/spreadsheets/d/1ICgt-fgTvNPbE_65x5jUsqy8JjHVv5WUvmE7g7VUbsI/edit#gid=sharing Particulates in Advanced PECVD#2 2017 ]
 
== SiO<sub>2</sub> deposition (PECVD #2)  ==
 
*[[media:New Adv PECVD OXIDE 300C standard recipe OXIDE Standard Recipe.pdf|Oxide Standard Recipe]]
 
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dGJZaGtDTVRqa1BRdW5iU1N1Y01jd0E&usp=drive_web#gid=sharing Oxide Data 2014]
 
*[https://docs.google.com/spreadsheets/d/1d5boeJRWWgMqvQe6nVM7m8s3KAcS4Yp2L5CEU9svkX4/edit#gid=sharing Oxide Data 2015]
 
*[https://docs.google.com/spreadsheets/d/1XQRcTJdw9AIMPAUsH0n9Ic9Fe1_xGDSvAxD4gVc9FBw/edit#gid=sharing Oxide data 2016]
 
*[https://docs.google.com/spreadsheets/d/1vcaHwraMGNHuRxgWwGp78EJf4T3Jk182wxoCz_neuck/edit#gid=sharing Oxide Data 2017]
 
*[https://docs.google.com/spreadsheets/d/15SocIqWQvBKSvT5oCWoZAURLaaqb9KosxCN2rueZQN8/edit#gid=sharing New Data-300nm SiO<sub>2</sub> 2017]
 
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dDRjSHEtYUZRUTg4azE2U0JGUTg2M1E#gid=sharing Oxide Thickness Uniformity 2014]
 
*[https://docs.google.com/spreadsheets/d/16pZHcGwesXB1mMPwntOudBIlPvRh6A6DI37DEwyYfPw/edit#gid=sharing Oxide Thickness Uniformity 2015]
 
*[https://docs.google.com/spreadsheets/d/10OEuANVNmHqWvx-92zibechIrHK5kgqSK4B_O_O3-YI/edit#gid=sharing Oxide Thickness Uniformity 2016]
 
*[https://docs.google.com/spreadsheets/d/19JjJYdFNFzO685Hp9hODVRFAYF5bP3IEYGTRGQjqLN4/edit#gid=sharing Oxide Thickness Uniformity 2017]
 
  
== SiN deposition (PECVD #2) ==
+
===[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=272916741 PECVD 2 Plots]===
*[[media:New Adv PECVD-Nitride2 300C standard recipe Nitride2 Standard Recipe.pdf|Nitride2 Standard Recipe]]
+
 
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dDE0R3FlenNPa2txNmRldTczMXZNNnc#gid=sharing Nitride2 Data 2014]
+
==SiO<sub>2</sub> deposition (PECVD #2)==
*[https://docs.google.com/spreadsheets/d/1SkYqOwgjUyMaFBPhuTjMvBTXu0KdQFNmITryF_OVi8o/edit#gid=sharing Nitride2 Data 2015]
+
 
*[https://docs.google.com/spreadsheets/d/1HJszgZyEZR9ZsiJpQM6pdsoQ6pWwI6brXasdmfDRoBQ/edit#gid=sharing Nitride2 Data 2016]
+
*[https://docs.google.com/spreadsheets/d/1wCEcFj6ZMHR4QifngLXwz6dqbyf8hsVKu7bQbMS6EoA/edit#gid= SiO<sub>2</sub><nowiki> [PECVD 2] Standard Recipe</nowiki>] - "''STD SiO2''"
*[https://docs.google.com/spreadsheets/d/1f3JBEnr7lf0yIMlzlOYKv_bXlIDyXt8vec_rSVJIoOk/edit#gid=sharing Nitride2 Data 2017]
+
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=1313651154 SiO<sub>2</sub><nowiki> [PECVD 2] Current Process Control Data</nowiki>]
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dERkYm85bGtYQVpjVk5GTGJuMkg2anc&usp=drive_web#gid=sharing Nitride2 Thickness Uniformity 2014]
+
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=2024333220 SiO<sub>2</sub><nowiki> [PECVD 2] Historical Data</nowiki>] - Before Oct. 2021
*[https://docs.google.com/spreadsheets/d/14_dYQu3z31fF_oxsUUX8BmDucgv6B07xB3_zqP0HmvM/edit#gid=sharing Nitride2 Thickness Uniformity 2015]
+
 
*[https://docs.google.com/spreadsheets/d/1qBHs7uALM2OdE-yXOq4uZk6aUQEjZRjG1C6RcMEf0sk/edit#gid=sharing Nitride2 Thickness Uniformity 2016]
+
==SiN deposition (PECVD #2)==
*[https://docs.google.com/spreadsheets/d/1WJcYzHUjLrWpys_i-Q96FN_lBDBufpXZKZVEX_gri_Q/edit#gid=sharing Nitride2 Thickness Uniformity 2017]
+
 
*[[media:SiNx_Films_by_PECVD2.pdf|SiNx Film Stress vs LF and HF Duration Time, and Gas Flowing-rate]]
+
*[https://docs.google.com/spreadsheets/d/1KS4HfhUJyYVep4H6CRAKpMRP5TA31F0qD-obQkKRnEI/edit#gid= Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 2] Standard Recipe</nowiki>] - "''Nitride2''"
 +
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=773875841 Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 2] Current Process Control Data</nowiki>]
 +
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=1153442266 Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 2] Historical Data</nowiki>] - Before Oct. 2021
 +
 
 +
==Low-Stress SiN deposition (PECVD #2)==
 +
''Low-Stress SilIcon Nitride, Si<sub>3</sub>N<sub>4</sub> (< 100 MPa)''
 +
 
 +
*[https://docs.google.com/spreadsheets/d/1DzzI7aE61R7c6gyk6cGBdm9FtGrApiNJ4AL90ll2C8k/edit#gid= Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 2] Standard Recipe</nowiki>] - "''LSNitride2''"
 +
***''Old Versions of the recipe:''
 +
****[https://wiki.nanotech.ucsb.edu/wiki/images/a/a5/New_AdvPECVD-LS_Nitride2_300C_standard_recipe_LS_Nitride2_standard_recipe.pdf LS Nitride2 Standard Recipe 2014-5/9/2018]
 +
****[https://wiki.nanotech.ucsb.edu/wiki/images/0/01/STD_LSNitride2_5-9-18.pdf STD LSNitride2 5/9/2018]
 +
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=584923738 Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 2] Current Process Control Data</nowiki>]
 +
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=268003895 Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 2] Historical Data - Before Oct. 2021</nowiki>]
 +
 
 +
==Amorphous-Si deposition (PECVD #2)==
 +
 
 +
*[https://wiki.nanotech.ucsb.edu/wiki/images/9/9d/03-Amorphous-Si-PECVD-2.pdf Amorphous Si Deposition Recipe]
 +
*[https://wiki.nanotech.ucsb.edu/wiki/images/0/09/ASi_deposition_and_film_stress_using_AV_dep_tool.pdf Amorphous Si Film Characterization and Stress]
 +
 
 +
==Standard Cleaning Procedure (PECVD #2)==
 +
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:
  
==LS SiN deposition (PECVD #2) ==
+
#(If >29min dep time) Wet cleaning: Start cleaning by using a cleanroom wipe sprayed with DI. Wipe upper chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA & wiping again.
 +
#Load the recipe for cleaning "STD CF<sub>4</sub>/O<sub>2</sub> Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding required time for cleaning.
  
*[[media:Adv PECVD-LS Nitride2 300C standard recipe .pdf|LS Nitride2 Standard Recipe]]
+
===[https://wiki.nanotech.ucsb.edu/w/images/3/34/PECVD2_photo_for_cleaning.png Standard Clean Recipe (PECVD#2): "STD CF4/O2 Clean"]===
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEZvWVhzS1pHUXZkOGcyQWZ4LTNBWGc&usp=drive_web#gid=sharing LS Nitride2 Data 2014]
+
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will pop up a window for the cleaning time upon running the recipe - you do not need to edit the recipe before running it.
*[https://docs.google.com/spreadsheets/d/16Q6BrPoNiFP0elVoSGwXRfQdHXzAXOgiyqKmEw-4kII/edit#gid=sharing LS Nitride2 Data 2015]
 
*[https://docs.google.com/spreadsheets/d/1GZ58eFzD-T8DJ2Nsaj74u6cvawzsOI2DmMit6Z7vqys/edit#gid=sharing LS Nitride2 Data 2016]
 
*[https://docs.google.com/spreadsheets/d/1gGIWqkCnykPgBc3prhXExT7QcNjWm2HdbTtwugNqm18/edit#gid=sharing LS Nitride2 Data 2017]
 
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dENSak1ZNnVaVTFEQTBzdDJMSDlDTFE&usp=drive_web#gid=1=sharing LS Nitride2 Thickness Uniformity 2014]
 
*[https://docs.google.com/spreadsheets/d/1LpkaOpr7oNoyvxFkineD7i9FspO6LweJMulvZHJM5Zc/edit#gid=sharing LS Nitride2 Thickness Uniformity 2015]
 
*[https://docs.google.com/spreadsheets/d/1FRzW9BaIPF2D3cxPgjLq8hbvrBHXDNkiW6DiPVKQBRM/edit#gid=sharing LS Nitride2 Thickness Uniformity 2016]
 
*[https://docs.google.com/spreadsheets/d/1vyrgvdEZFgnQUilpa5Ka2nOfowY8zlmJfbQ77EamNBg/edit#gid=sharing LS Nitride2 Thickness Uniformity 2017]
 
  
== Amorphous-Si deposition (PECVD #2)  ==
 
*[[media:03-Amorphous-Si-PECVD-2.pdf|Amorphous Si Deposition Recipe]]
 
*[[media:ASi_deposition_and_film_stress_using_AV_dep_tool.pdf|Amorphous Si Films and Their Stress]]
 
  
= [[ICP-PECVD (Unaxis VLR)]] =
+
'''Clean Times (PECVD#2''')
==SiN deposition (Unaxis VLR) ==
+
{| class="wikitable"
=== SiN (2% SiH<sub>4</sub>)   ===
+
!Film Deposited
{| border="1" class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;"
+
!Cleaning Time (Dry)
|- bgcolor="#D0E7FF"
+
|-
!width=350 align=center|50° (pinholes)
+
|SiO<sub>2</sub>
!width=350 align=center|100° (pinholes)
+
|1 min. clean for every 1 min. deposition
!width=350 align=center|250°
+
|-
|-align=left
+
|Si<sub>3</sub>N<sub>4</sub>
|
+
|1 min. clean for every 7 min of deposition
*[[Media:PECVD2-SiN-Recipe-5W-50C-High-Stress.pdf|SiN Deposition Recipe (5W 50° High Stress)]]
 
*[[Media:PECVD2-SiN-Recipe-50W-50C-Medium-Stress.pdf|SiN Deposition Recipe (50W 50° Medium Stress)]]
 
*[[Media:PECVD2-SiN-Recipe-120W-50C-Low-Stress.pdf|SiN Deposition Recipe (120W 50° Low Stress)]]
 
|
 
*[[Media:PECVD2-SiN-Recipe-5W-100C-High-Stress.pdf|SiN Deposition Recipe (5W 100° High Stress)]]
 
*[[Media:PECVD2-SiN-Recipe-50W-100C-Medium-Stress.pdf|SiN Deposition Recipe (50W 100° Medium Stress)]]
 
*[[Media:PECVD2-SiN-Recipe-120W-100C-Low-Stress.pdf|SiN Deposition Recipe (120W 100° Low Stress)]]
 
*[[Media:PECVD2-SiNx-l.s.-Comparison table-2% SiH4-100C-120W.pdf|Comparison Table SiNx (120W 100° Low Stress)]]
 
*[[Media:PECVD2-SiNx-medium-Comparison table-2% SiH4-100C-120W.pdf|Comparison Table SiNx (50W 100° Medium Stress)]]
 
*[[Media:PECVD2-SiNx -h.s.-Comparison table-2% SiH4-100C-120W.pdf|Comparison Table SiNx (5W 100° High Stress)]]
 
*[[Media:PECVD2-SiNx-medium stress-SEM-2% SiH4-100C-50W.pdf|SiNx SEM images (50W 100° Medium Stress)]]
 
*[[Media:PECVD2-SiNx-high stress-SEM-2% SiH4-100C-5W.pdf|SiNx SEM images (5W 100° High Stress)]]
 
|
 
*[[Media:PECVD2-SiN-Recipe-5W-250C-High-Stress.pdf|SiN Deposition Recipe (5W 250° High Stress)]]
 
*[[Media:PECVD2-SiN-Recipe-50W-250C-Medium-Stress.pdf|SiN Deposition Recipe (50W 250° Medium Stress)]]
 
*[[Media:PECVD2-SiN-Recipe-120W-250C-Low-Stress.pdf|SiN Deposition Recipe (120W 250° Low Stress)]]
 
*[[Media:PECVD2-SiNx-l.s.-Comparison table-2% SiH4-100C-120W.pdf|Comparison Table SiNx (120W 250° Low Stress)]]
 
*[[Media:PECVD2-SiNx-medium-Comparison table-2% SiH4-100C-120W.pdf|Comparison Table SiNx (50W 250° Medium Stress)]]
 
*[[Media:PECVD2-SiNx -h.s.-Comparison table-2% SiH4-100C-120W.pdf|Comparison Table SiNx (5W 250° High Stress)]]
 
*[[Media:28-Very-low-pin-hole-density_SiNx_film_at_300_C.pdf|Very-Low-Pin-Hole-Density SiNx Recipe(25W 300°)]]
 
 
|-
 
|-
 +
|If > 29min total dep time
 +
(Season + Dep)
 +
|Wet Clean the Upper Lid/Chamber
 +
DI water then Isopropyl Alcohol on chamber wall & portholes
 
|}
 
|}
  
=== SiN (2% SiH<sub>4</sub> - No-Ar)  ===
+
=[[ICP-PECVD (Unaxis VLR)]]=
{| border="1" class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;"
+
2020-02: New recipes have been characterized for low particulate count and repeatability.  Only staff-supplied recipes are allowed in the tool. Please follow the [[ICP-PECVD (Unaxis VLR)#Documentation|new procedures]] to ensure low particle counts in the chamber.
|- bgcolor="#D0E7FF"
+
 
!width=350 align=center|50° (pinholes)
+
  The system currently has Deuterated Silane (SiD<sub>4</sub>) installed - identical to the regular Silicon precursor SiH<sub>4</sub>, except that it significantly lowers optical absorption in the near-infrared due to shifted molecular vibrations/molecular weights.
!width=350 align=center|100° (pinholes)
+
 
!width=350 align=center|250°
+
===[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=417334948https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=417334948 ICP-PECVD Plots] - TBD===
|-align=left
+
 
|
+
==Low Deposition Rate SiO<sub>2</sub> [ICP-PECVD]==
*[[Media:PECVD2-SiN-Recipe-NoAr-5W-50C-High-Stress.pdf|SiN Deposition Recipe - No Ar (5W 50° High Stress)]]
+
 
*[[Media:41-High-stress_SiNx_at_50_C_using_Unaxis_ICP_deposition_tool.pdf|Film Properties of High-stress SiN<sub>x</sub> (No Ar, 5W, 50°)]]
+
*[https://docs.google.com/spreadsheets/d/1wocoCPOOEDQcZbXJJNaZs1sr9dXBZpn1wUyglL8IQrI/edit#gid=1199123007 Low Deposition Rate SiO<sub>2</sub><nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 LDR 250C''"
*[[Media:PECVD2-SiN-Recipe-NoAr-50W-50C-Medium-Stress.pdf|SiN Deposition Recipe - No Ar (50W 50° Medium Stress)]]
+
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=0 Low Deposition Rate SiO<sub>2</sub><nowiki> [ICP-PECVD] - Current Process Control Data</nowiki>]
*[[Media:36-Medium-stress_SiNx_using_Unaxis_ICP_deposition_tool-a.pdf|Film Properties of Medium-stress SiN<sub>x</sub> (No Ar, 50W, 50°)]]
+
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1916118198 Low Deposition Rate SiO<sub>2</sub><nowiki> [ICP-PECVD] - Historical Data</nowiki>] - before Oct. 2021
*[[Media:PECVD2-SiN-Recipe-NoAr-120W-50C-Low-Stress.pdf|SiN Deposition Recipe - No Ar (120W 50° Low Stress)]]
+
 
*[[Media:40-Low-stress_SiNx_at_50_C_using_Unaxis_ICP_deposition_tool.pdf|Film Properties of Low-stress SiN<sub>x</sub> (No Ar, 120W, 50°)]]
+
==High Deposition Rate SiO<sub>2</sub> [ICP-PECVD]==
|
+
 
*[[Media:PECVD2-SiN-Recipe-NoAr-5W-100C-High-Stress.pdf|SiN Deposition Recipe - No Ar (5W 100° High Stress)]]
+
*[https://docs.google.com/spreadsheets/d/1OxHi5r9ifNvF8ODpIk6aoRevb4RdbbykwPVMm1g-yi4/edit#gid=1199123007 High Deposition Rate SiO<sub>2</sub><nowiki> [ICP-PECVD] Standard Recipe</nowiki>] - "''SiO2 HDR 250C''"
*[[Media:38-High-stress_SiNx_at_100_C_using_Unaxis_ICP_deposition_tool.pdf|Film Properties of high-stress SiN<sub>x</sub> (No Ar, 5W, 100°)]]
+
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1459210138 High Deposition Rate SiO<sub>2</sub><nowiki> [ICP-PECVD] Present Data</nowiki>]
*[[Media:PECVD2-SiN-Recipe-NoAr-50W-100C-Medium-Stress.pdf|SiN Deposition Recipe - No Ar (50W 100° Medium Stress)]]
+
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=939753086 High Deposition Rate SiO<sub>2</sub><nowiki> [ICP-PECVD] Historical Data</nowiki>]
*[[Media:39-Medium-stress_SiNx_at_100C_using_Unaxis_ICP_deposition_tool.pdf|Film Properties of Medium-stress SiN<sub>x</sub> (No Ar, 50W, 100°)]]
 
*[[Media:PECVD2-SiN-Recipe-NoAr-120W-100C-Low-Stress.pdf|SiN Deposition Recipe - No Ar (120W 100° Low Stress)]]
 
*[[Media:37-Low-stress_SiNx_at_100_C_using_Unaxis_ICP_deposition_tool.pdf|Film Properties of Low-stress SiN<sub>x</sub> (No Ar, 120W, 100°)]]
 
|
 
*[[Media:PECVD2-SiN-Recipe-NoAr-5W-250C-High-Stress.pdf|SiN Deposition Recipe - No Ar (5W 250° High Stress)]]
 
*[[Media:34-High-stress_SiNx_at_250_C_using_Unaxis_ICP_deposition_tool.pdf|Film Properties of High-stress SiN<sub>x</sub> (No Ar, 5W, 250°)]]
 
*[[Media:PECVD2-SiN-Recipe-NoAr-50W-250C-Medium-Stress.pdf|SiN Deposition Recipe - No Ar (50W 250° Medium Stress)]]
 
*[[Media:36-Medium-stress_SiNx_using_Unaxis_ICP_deposition_tool-a.pdf|Film Properties of Medium-stress SiN<sub>x</sub> (No Ar, 50W, 250°)]]
 
*[[Media:PECVD2-SiN-Recipe-NoAr-120W-250C-Low-Stress.pdf|SiN Deposition Recipe - No Ar (120W 250° Low Stress)]]
 
*[[Media:35-Low-stress_SiNx_at_250_C_using_Unaxis_ICP_deposition_tool.pdf|Film Properties of Low-stress SiN<sub>x</sub> (No Ar, 120W, 250°)]]
 
|-
 
|}
 
  
=== SiN  (2% SiH<sub>4</sub> - No-Ar - Extra N<sub>2</sub>)  ===
+
==Si<sub>3</sub>N<sub>4</sub> [ICP-PECVD]==
{| border="1" class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;"
 
|- bgcolor="#D0E7FF"
 
!width=350 align=center|50° (pinholes)
 
!width=350 align=center|100° (pinholes)
 
!width=350 align=center|250°
 
|-align=left
 
|
 
*[[Media:PECVD2-SiN-Recipe-NoAr-ExtraN2-120W-50C-Low-Stress.pdf|SiN Deposition Recipe - No Ar Extra N<sub>2</sub> (120W 50° Low Stress)]]
 
|
 
*[[Media:PECVD2-SiN-Recipe-NoAr-ExtraN2-120W-100C-Low-Stress.pdf|SiN Deposition Recipe - No Ar Extra N<sub>2</sub> (120W 100° Low Stress)]]
 
|
 
*[[Media:PECVD2-SiN-Recipe-NoAr-ExtraN2-120W-250C-Low-Stress.pdf|SiN Deposition Recipe - No Ar Extra N<sub>2</sub> (120W 250° Low Stress)]]
 
|-
 
|}
 
  
=== SiN  (100% SiH<sub>4</sub> ) ===
+
*[https://docs.google.com/spreadsheets/d/1VrgS0cB2OcdZVTCnDAesgQCLRaAgEB_Iajc_OrhXOo0/edit#gid=1199123007 Si<sub>3</sub>N<sub>4</sub><nowiki> [ICP-PECVD] Standard Recipe</nowiki>] - "''SiN 250C''"
{| border="1" class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;"
+
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1459210138 Si<sub>3</sub>N<sub>4</sub><nowiki> [ICP-PECVD] Current Process Control Data</nowiki>]
|- bgcolor="#D0E7FF"
+
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=782128304 Si<sub>3</sub>N<sub>4</sub><nowiki> [ICP-PECVD] Historical Data</nowiki>] - before Oct. 2021
!width=350 align=center|50° (pinholes)
 
!width=350 align=center|100° (pinholes)
 
!width=350 align=center|250°
 
|-align=left
 
|
 
*[[Media:PECVD2-SiN-Recipe-Low stress SiNx-100%SiH4-120W-50C.pdf|SiN Deposition Recipe (120W 50° Low Stress)]]
 
|
 
*[[Media:PECVD2-SiN-Recipe-Low stres SiNx-100% SiH4-120W-100C.pdf|SiN Deposition Recipe (120W 100° Low Stress)]]
 
*[[Media:PECVD2-SiN-Table-Low stres SiNx-100% SiH4-120W-100C.pdf|SiN Comparison Table 120W-100(250)C]]
 
|
 
*[[Media:PECVD2-SiN-Recipe-Low stress SiNx-100% SiH4-120W-250C.pdf|SiN Deposition Recipe (120W 250° Low Stress)]]
 
*[[Media:PECVD2-SiN-Table-Low stres SiNx-100% SiH4-120W-100C.pdf|SiN Comparison Table 120W, 100(250)C ]]
 
|- align=left
 
|
 
*[[Media:PECVD2-SiN-Recipe-Medium stress SiNx-100%SiH4-120W-50C.pdf|SiN Deposition Recipe (50W 50° Medium Stress)]]
 
|
 
*[[Media:PECVD2-SiN-Recipe-Medium stres SiNx-100% SiH4-120W-100C.pdf|SiN Deposition Recipe (50W 100° Medium Stress)]]
 
*[[Media:PECVD2-SiN-Table-Low stres SiNx-100% SiH4-120W-100C.pdf|SiN Comparison Table 50W, 100(250)C]]
 
*[[Media:27-SiNx_Film_(Bias%3D50W)_Sidewall_Coverage.pdf|SiN SEM sidewall coverage]]
 
|
 
*[[Media:PECVD2-SiN-Recipe-Medium stress SiNx-100% SiH4-120W-250C.pdf|SiN Deposition Recipe (50W 250° Medium Stress)]]
 
*[[Media:PECVD2-SiN-Table-Low stres SiNx-100% SiH4-120W-100C.pdf|SiN ComparisonTable 50W, 100(250)C]]
 
|-
 
|}
 
  
==SiO<sub>2</sub> deposition (Unaxis VLR) ==
+
==Low Stress Si<sub>3</sub>N<sub>4</sub> [ICP-PECVD]==
=== SiO<sub>2</sub> (2% SiH<sub>4</sub>)  ===
 
{| border="1" class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;"
 
|- bgcolor="#D0E7FF"
 
!width=350 align=center|50°
 
!width=350 align=center|100°
 
!width=350 align=center|250°
 
|-align=left
 
|
 
*[[Media:PECVD2-SiO2Recipe-5W-50C.pdf|SiO<sub>2</sub> Deposition Recipe (5W 50°)]]
 
|
 
*[[Media:PECVD2-SiO2Recipe-5W-100C.pdf|SiO<sub>2</sub> Deposition Recipe (5W 100°)]]
 
*[[Media:SiO2 film Unaxis ICP vs PECVD I.pdf|SiO<sub>2</sub> film Unaxis ICP vs PECVD I]]
 
*[[Media:SEM pictures SiO2 100C.pdf|SiO<sub>2</sub> SEM pictures 100C]]
 
|
 
*[[Media:PECVD2-SiO2Recipe-5W-250C.pdf|SiO<sub>2</sub> Deposition Recipe (5W 250°)]]
 
*[[Media:SiO2 film Unaxis ICP vs PECVD I.pdf|SiO<sub>2</sub> film Unaxis ICP vs PECVD I]]
 
|-
 
|}
 
  
=== SiO<sub>2</sub> (2% SiH<sub>4</sub> - No Ar)  ===
+
*[https://docs.google.com/spreadsheets/d/1i2mE2K12EEulnCbO9KuU9PCcvHAmcGxTIXUF8x4IOWk/edit#gid=1199123007 Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [ICP-PECVD] Standard Recipe</nowiki>] - "''SiN Low Stress 250C''"
{| border="1" class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;"
+
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1459210138 Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [ICP-PECVD] Current Process Control Data</nowiki>]
|- bgcolor="#D0E7FF"
+
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1024532473 Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [ICP-PECVD] Historical Data</nowiki>] - before Oct. 2021
!width=350 align=center|50°
 
!width=350 align=center|100°
 
!width=350 align=center|250°
 
|-align=left
 
|
 
*[[Media:PECVD2-SiO2-Recipe-NoAr-50C.pdf|SiO<sub>2</sub> Deposition Recipe - No Ar (50°)]]
 
*[[Media:29-UnaxisPM3-SiO2-SiH4-O2-He.pdf|SiO<sub>2</sub> Film Properties-No Ar]]
 
|
 
*[[Media:PECVD2-SiO2-Recipe-NoAr-100C.pdf|SiO<sub>2</sub> Deposition Recipe - No Ar (100°)]]
 
*[[Media:29-UnaxisPM3-SiO2-SiH4-O2-He.pdf|SiO<sub>2</sub> Film Properties-No Ar]]
 
|
 
*[[Media:PECVD2-SiO2-Recipe-NoAr-250C.pdf|SiO<sub>2</sub> Deposition Recipe - No Ar (250°)]]
 
*[[Media:29-UnaxisPM3-SiO2-SiH4-O2-He.pdf|SiO<sub>2</sub> Film Properties-No Ar]
 
|-
 
|}
 
  
=== SiO<sub>2</sub> (100% SiH<sub>4</sub> HDR)  ===
+
==Standard Cleaning Procedure [ICP-PECVD]==
{| border="1" class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;"
+
You must edit the Post-Dep Clean recipe to correspond to your deposited thickness and material. See the [[ICP-PECVD (Unaxis VLR)#Documentation|Operating Procedure on the Unaxis Tool Page]] for details.
|- bgcolor="#D0E7FF"
 
!width=350 align=center|50°
 
!width=350 align=center|100°
 
!width=350 align=center|250°
 
|-align=left
 
|
 
*[[Media:SiO2 100% SiH4 HDR 50C.pdf|SiO<sub>2</sub> Deposition Recipe - HDR (50°)]]
 
|
 
*[[Media:PECVD2-SiO2-Recipe-100%SiH4-HDR-100C.pdf|SiO<sub>2</sub> Deposition Recipe - HDR (100°)]]
 
*[[Media:PECVD2-SiO2-HDR-100% SiH4.pdf|SiO<sub>2</sub> Comparison Table - HDR (100°)]]
 
|
 
*[[Media:PECVD2-SiO2-Recipe-100%SiH4-HDR-250C.pdf|SiO<sub>2</sub> Deposition Recipe - HDR (250°)]]
 
*[[Media:PECVD2-SiO2-HDR-100% SiH4.pdf|SiO<sub>2</sub> Comparison Table - HDR (250°)]]
 
|-
 
|}
 
  
=== SiO<sub>2</sub> (100% SiH<sub>4</sub> LDR)  ===
+
*SiNx etches at 20nm/min
{| border="1" class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;"
+
*SiO<sub>2</sub> etches at 40nm/min
|- bgcolor="#D0E7FF"
 
!width=350 align=center|50°
 
!width=350 align=center|100°
 
!width=350 align=center|250°
 
|-align=left
 
|
 
*[[Media:PECVD2-SiO2-Recipe-100%SiH4-LDR-50C.pdf|SiO<sub>2</sub> Deposition Recipe - LDR (50°)]]
 
|
 
*[[Media:PECVD2-SiO2-Recipe-100%SiH4-LDR-100C.pdf|SiO<sub>2</sub> Deposition Recipe - LDR (100°)]]
 
*[[Media:PECVD2-SiO2-LDR-100% SiH4.pdf|SiO<sub>2</sub> Comparison Table - LDR (100°)]]
 
*[[Media:PECVD2-SiO2-SEM-LDR SiO2-100% SiH4-100C-15W.pdf|SiO<sub>2</sub> SEM sidewall coverage]]
 
|
 
*[[Media:PECVD2-SiO2-Recipe-100%SiH4-LDR-250C.pdf|SiO<sub>2</sub> Deposition Recipe - LDR (250°)]]
 
*[[Media:PECVD2-SiO2-LDR-100% SiH4.pdf|SiO<sub>2</sub> Comparison Table - LDR (250°)]]
 
|-
 
|}
 
  
=== Amorphous Si (100%SiH<sub>4</sub> Ar He)  ===
+
===Standard Clean Recipe===
{| border="1" class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;"
+
''To Be Added''
|- bgcolor="#D0E7FF"
 
!width=350 align=center|90°
 
!width=350 align=center|250°
 
|-align=left
 
|
 
*[[Media:02-ICP-PECVD-a-Si_Film-90C.pdf|a-Si Deposition Recipe - 90°]]
 
|
 
*[[Media:01-ICP-PECVD-a-Si-Deposition_Recipe-250C.pdf|a-Si Deposition Recipe - 250°]]
 
*[[Media:Amorphous_Silicon_Film_Deposition_using_12.5W_bias_on_SiO2-Si.pdf|Thick, Defects-free a-Si Film on SiO<sub>2</sub>/Si with a Lower Bias Power]]
 
|-
 
|}
 

Latest revision as of 23:09, 15 December 2021

Back to Vacuum Deposition Recipes.

PECVD 1 (PlasmaTherm 790)

PECVD 1 Plots - SiO2, SiN and Particulate Count

SiO2 deposition (PECVD #1)

SiN deposition (PECVD #1)

Low Stress Si3N4 (PECVD#1)

SiOxNy deposition (PECVD #1)

Standard Cleaning Procedure (PECVD #1)

The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:

  1. Wet cleaning (start cleaning by using a cleanroom wipe sprayed with DI. Wipe chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA. )
  2. Load the recipe for cleaning "CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding a required time for cleaning.
Table of Cleaning Times
Film Dep'd Cleaning Time
SiO2 TBD
Si3N4 TBD
SiOxNy Same as XYZ

Standard Cleaning Recipe (PECVD#1): "CF4/O2 Clean"

Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will pop up a window for the cleaning time upon running the recipe - you do not need to edit the recipe before running it.

PECVD 2 (Advanced Vacuum)

PECVD 2 Plots

SiO2 deposition (PECVD #2)

SiN deposition (PECVD #2)

Low-Stress SiN deposition (PECVD #2)

Low-Stress SilIcon Nitride, Si3N4 (< 100 MPa)

Amorphous-Si deposition (PECVD #2)

Standard Cleaning Procedure (PECVD #2)

The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:

  1. (If >29min dep time) Wet cleaning: Start cleaning by using a cleanroom wipe sprayed with DI. Wipe upper chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA & wiping again.
  2. Load the recipe for cleaning "STD CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding required time for cleaning.

Standard Clean Recipe (PECVD#2): "STD CF4/O2 Clean"

Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will pop up a window for the cleaning time upon running the recipe - you do not need to edit the recipe before running it.


Clean Times (PECVD#2)

Film Deposited Cleaning Time (Dry)
SiO2 1 min. clean for every 1 min. deposition
Si3N4 1 min. clean for every 7 min of deposition
If > 29min total dep time

(Season + Dep)

Wet Clean the Upper Lid/Chamber

DI water then Isopropyl Alcohol on chamber wall & portholes

ICP-PECVD (Unaxis VLR)

2020-02: New recipes have been characterized for low particulate count and repeatability.  Only staff-supplied recipes are allowed in the tool. Please follow the new procedures to ensure low particle counts in the chamber.
The system currently has Deuterated Silane (SiD4) installed - identical to the regular Silicon precursor SiH4, except that it significantly lowers optical absorption in the near-infrared due to shifted molecular vibrations/molecular weights.

ICP-PECVD Plots - TBD

Low Deposition Rate SiO2 [ICP-PECVD]

High Deposition Rate SiO2 [ICP-PECVD]

Si3N4 [ICP-PECVD]

Low Stress Si3N4 [ICP-PECVD]

Standard Cleaning Procedure [ICP-PECVD]

You must edit the Post-Dep Clean recipe to correspond to your deposited thickness and material. See the Operating Procedure on the Unaxis Tool Page for details.

  • SiNx etches at 20nm/min
  • SiO2 etches at 40nm/min

Standard Clean Recipe

To Be Added