Difference between revisions of "PECVD Recipes"
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(→ICP-PECVD (Unaxis VLR): cleaned up process control section, and added 800nm max SiO2 thickness before cleaning) |
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*[https://wiki.nanotech.ucsb.edu/wiki/images/4/4a/New_PECVD1-LS_SIN-Turner05recipe_2014_LS_SIN_recipe.pdf Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 1] Standard Recipe</nowiki>] |
*[https://wiki.nanotech.ucsb.edu/wiki/images/4/4a/New_PECVD1-LS_SIN-Turner05recipe_2014_LS_SIN_recipe.pdf Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 1] Standard Recipe</nowiki>] |
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| − | *[[To Be Added|Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 1] Current Process Control Data</nowiki>]] ''- To Be Added'' |
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*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#Low-Stress_SiN_-_LS-SiN_.28PECVD.231.29 Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 1] Historical Data</nowiki>] - 2021-10 and earlier |
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#Low-Stress_SiN_-_LS-SiN_.28PECVD.231.29 Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 1] Historical Data</nowiki>] - 2021-10 and earlier |
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| + | |||
| + | :[[File:PECVD1 SiN Stress vs. N2 plot.jpg|alt=plot of SiN stress and Refractive Index vs. N2 flow. |none|thumb|414x414px|Example of Si<sub>3</sub>N<sub>4</sub> modified stress via. varying N<sub>2</sub> flow. Refractive index is relatively constant (one outlier), and stress varies continuously from tensile to compressive. ([[Demis D. John]] 2011, [https://engineering.ucsb.edu/people/daniel-blumenthal Blumenthal Group])]] |
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==SiO<sub>x</sub>N<sub>y</sub> deposition (PECVD #1)== |
==SiO<sub>x</sub>N<sub>y</sub> deposition (PECVD #1)== |
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| Line 63: | Line 64: | ||
==SiO<sub>2</sub> deposition (PECVD #2)== |
==SiO<sub>2</sub> deposition (PECVD #2)== |
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| − | *[https://docs.google.com/spreadsheets/d/ |
+ | *[https://docs.google.com/spreadsheets/d/1cYK-k669vf8YO2q2YCGa3gTdaDI3I3M-a9KR5RDlZWY/edit#gid= SiO<sub>2</sub><nowiki> [PECVD 2] New Standard Recipe</nowiki>] - "''STD SiO2 v2''" |
| ⚫ | |||
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=1313651154 SiO<sub>2</sub><nowiki> [PECVD 2] Current Process Control Data</nowiki>] |
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=1313651154 SiO<sub>2</sub><nowiki> [PECVD 2] Current Process Control Data</nowiki>] |
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*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_deposition_.28PECVD_.232.29 SiO<sub>2</sub><nowiki> [PECVD 2] Historical Data</nowiki>] - Before Oct. 2021 |
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_deposition_.28PECVD_.232.29 SiO<sub>2</sub><nowiki> [PECVD 2] Historical Data</nowiki>] - Before Oct. 2021 |
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| Line 69: | Line 71: | ||
==SiN deposition (PECVD #2)== |
==SiN deposition (PECVD #2)== |
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| − | *[https://docs.google.com/spreadsheets/d/ |
+ | *[https://docs.google.com/spreadsheets/d/1JBXEfRGemFJK81RkHfxS0cTucb3viUL7hMGzmKRD5uU/edit#gid= Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 2] New Standard Recipe</nowiki>] - "''STD Si3N4 v3''" |
| ⚫ | |||
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=773875841 Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 2] Current Process Control Data</nowiki>] |
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=773875841 Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 2] Current Process Control Data</nowiki>] |
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*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiN_deposition_.28PECVD_.232.29 Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 2] Historical Data</nowiki>] - Before Oct. 2021 |
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiN_deposition_.28PECVD_.232.29 Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 2] Historical Data</nowiki>] - Before Oct. 2021 |
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| Line 76: | Line 79: | ||
''Low-Stress Silicon Nitride, Si<sub>3</sub>N<sub>4</sub> (< ±100 MPa)'' |
''Low-Stress Silicon Nitride, Si<sub>3</sub>N<sub>4</sub> (< ±100 MPa)'' |
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| − | *[https://docs.google.com/spreadsheets/d/ |
+ | *[https://docs.google.com/spreadsheets/d/19VQ6ytYbZ5SsAiXzgWqwlyJUqgjWb8x_eyv7L8DvtwM/edit#gid= Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 2] New Standard Recipe</nowiki>] - "'' STD LS-Si3N4 v4 ''" |
| + | |||
| ⚫ | |||
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=584923738 Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 2] Current Process Control Data</nowiki>] |
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=584923738 Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 2] Current Process Control Data</nowiki>] |
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| Line 122: | Line 127: | ||
The system currently has '''Deuterated Silane (SiD<sub>4</sub>)''' installed - identical to the regular Silicon precursor SiH<sub>4</sub>, except that it significantly lowers optical absorption in the near-infrared due to shifted molecular vibrations/molecular weights. This gas is more expensive and thus more applicable to optical application than to general-purpose SiN films. |
The system currently has '''Deuterated Silane (SiD<sub>4</sub>)''' installed - identical to the regular Silicon precursor SiH<sub>4</sub>, except that it significantly lowers optical absorption in the near-infrared due to shifted molecular vibrations/molecular weights. This gas is more expensive and thus more applicable to optical application than to general-purpose SiN films. |
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| − | == |
+ | ==Process Control Data (Unaxis ICP-PECVD)== |
| − | * |
+ | *[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=417334948https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=417334948 ICP-PECVD Process Control Plots] - ''Plots of all Process Control data'' |
| − | * |
+ | *[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=0 Low Deposition Rate SiO<sub>2</sub>] |
| − | * |
+ | *[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1459210138 High Deposition Rate SiO<sub>2</sub>] |
| − | * |
+ | *[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1670372499 Si<sub>3</sub>N<sub>4</sub>] |
| − | * |
+ | *[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1517031044 Low Stress Si<sub>3</sub>N<sub>4</sub>] |
==Low Deposition Rate SiO<sub>2</sub> [ICP-PECVD]== |
==Low Deposition Rate SiO<sub>2</sub> [ICP-PECVD]== |
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| − | |||
| ⚫ | |||
*[https://docs.google.com/spreadsheets/d/17ft9jrHcCFCp2830RsLwQq5lHuupWATXT91SreG8WYY/edit#gid=143856038 Low Deposition Rate SiO<sub>2</sub><nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 LDR250C''" |
*[https://docs.google.com/spreadsheets/d/17ft9jrHcCFCp2830RsLwQq5lHuupWATXT91SreG8WYY/edit#gid=143856038 Low Deposition Rate SiO<sub>2</sub><nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 LDR250C''" |
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| + | **[https://docs.google.com/spreadsheets/d/1wocoCPOOEDQcZbXJJNaZs1sr9dXBZpn1wUyglL8IQrI/edit#gid=1199123007 Old Recipe] - |
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*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=0 Low Deposition Rate SiO<sub>2</sub><nowiki> [ICP-PECVD] - Process Control Data</nowiki>] |
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=0 Low Deposition Rate SiO<sub>2</sub><nowiki> [ICP-PECVD] - Process Control Data</nowiki>] |
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| Line 140: | Line 144: | ||
==High Deposition Rate SiO<sub>2</sub> [ICP-PECVD]== |
==High Deposition Rate SiO<sub>2</sub> [ICP-PECVD]== |
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| − | |||
| − | *[https://docs.google.com/spreadsheets/d/1OxHi5r9ifNvF8ODpIk6aoRevb4RdbbykwPVMm1g-yi4/edit#gid=1199123007 High Deposition Rate SiO<sub>2</sub><nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 HDR 250C''" old one |
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*[https://docs.google.com/spreadsheets/d/13KUlUujEWSLOH54Ibd52YNJPZcAc7ELShI2RAqM6H-Y/edit#gid=117484667 High Deposition Rate SiO<sub>2</sub><nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 HDR250C''" |
*[https://docs.google.com/spreadsheets/d/13KUlUujEWSLOH54Ibd52YNJPZcAc7ELShI2RAqM6H-Y/edit#gid=117484667 High Deposition Rate SiO<sub>2</sub><nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 HDR250C''" |
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| ⚫ | |||
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1459210138 High Deposition Rate SiO<sub>2</sub><nowiki> [ICP-PECVD] - Current Process Control Data</nowiki>] |
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1459210138 High Deposition Rate SiO<sub>2</sub><nowiki> [ICP-PECVD] - Current Process Control Data</nowiki>] |
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| Line 149: | Line 152: | ||
==Si<sub>3</sub>N<sub>4</sub> [ICP-PECVD]== |
==Si<sub>3</sub>N<sub>4</sub> [ICP-PECVD]== |
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| − | |||
| ⚫ | |||
*[https://docs.google.com/spreadsheets/d/1MffAE2S-Sga0o4botssPMi_P8C2ghxw4XiHwTnOn95Q/edit#gid=1111781219 Si<sub>3</sub>N<sub>4</sub><nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN 250C''" |
*[https://docs.google.com/spreadsheets/d/1MffAE2S-Sga0o4botssPMi_P8C2ghxw4XiHwTnOn95Q/edit#gid=1111781219 Si<sub>3</sub>N<sub>4</sub><nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN 250C''" |
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| + | **[https://docs.google.com/spreadsheets/d/1VrgS0cB2OcdZVTCnDAesgQCLRaAgEB_Iajc_OrhXOo0/edit#gid=1199123007 Old Recipe] |
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*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1670372499 Si<sub>3</sub>N<sub>4</sub><nowiki> [ICP-PECVD] - Current Process Control Data</nowiki>] |
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1670372499 Si<sub>3</sub>N<sub>4</sub><nowiki> [ICP-PECVD] - Current Process Control Data</nowiki>] |
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| Line 158: | Line 160: | ||
==Low Stress Si<sub>3</sub>N<sub>4</sub> [ICP-PECVD]== |
==Low Stress Si<sub>3</sub>N<sub>4</sub> [ICP-PECVD]== |
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| − | |||
| ⚫ | |||
*[https://docs.google.com/spreadsheets/d/1JuQlCU-mozIUJx9z9aQdisIJyFhv1r9AWI8EWeOnsPo/edit#gid=82816489 Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN Low Stress 250C''" |
*[https://docs.google.com/spreadsheets/d/1JuQlCU-mozIUJx9z9aQdisIJyFhv1r9AWI8EWeOnsPo/edit#gid=82816489 Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN Low Stress 250C''" |
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| + | **[https://docs.google.com/spreadsheets/d/1i2mE2K12EEulnCbO9KuU9PCcvHAmcGxTIXUF8x4IOWk/edit#gid=1199123007 Old Recipe] |
||
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1517031044 Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [ICP-PECVD] - Current Process Control Data</nowiki>] |
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1517031044 Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [ICP-PECVD] - Current Process Control Data</nowiki>] |
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Latest revision as of 10:28, 20 December 2023
Back to Vacuum Deposition Recipes.
PECVD 1 (PlasmaTherm 790)
PECVD 1 Process Control Plots - Plots of all process control data
SiO2 deposition (PECVD #1)
- SiO2 [PECVD 1] Current Process Control Data
- SiO2 [PECVD 1] Historical Data - Oct. 2021 and earlier
SiN deposition (PECVD #1)
- Si3N4 [PECVD 1] Standard Recipe
- Si3N4 [PECVD 1] Current Process Control Data
- Si3N4 [PECVD 1] Historical Data - Oct. 2021 and earlier
Low Stress Si3N4 (PECVD#1)
- Low Stress Si3N4 [PECVD 1] Standard Recipe
- Low Stress Si3N4 [PECVD 1] Historical Data - 2021-10 and earlier
Example of Si3N4 modified stress via. varying N2 flow. Refractive index is relatively constant (one outlier), and stress varies continuously from tensile to compressive. (Demis D. John 2011, Blumenthal Group)
SiOxNy deposition (PECVD #1)
- SiOxNy Standard Recipe
- SiOxNy Data 2014 - Rate, Index etc.
- SiOxNy1000A Thickness uniformity 2014
Standard Cleaning Procedure (PECVD #1)
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:
- Wet cleaning (start cleaning by using a cleanroom wipe sprayed with DI. Wipe chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA. )
- Load the recipe for cleaning "CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding a required time for cleaning.
| Film Dep'd | Cleaning Time |
|---|---|
| SiO2 | TBD |
| Si3N4 | TBD |
| SiOxNy | Same as XYZ |
Standard Cleaning Recipe (PECVD#1): "CF4/O2 Clean"
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will pop up a window for the cleaning time upon running the recipe - you do not need to edit the recipe before running it.
PECVD 2 (Advanced Vacuum)
PECVD 2 Process Control Plots - Plots of all process control data
SiO2 deposition (PECVD #2)
- SiO2 [PECVD 2] New Standard Recipe - "STD SiO2 v2"
- SiO2 [PECVD 2] Old Standard Recipe - "STD SiO2"
- SiO2 [PECVD 2] Current Process Control Data
- SiO2 [PECVD 2] Historical Data - Before Oct. 2021
SiN deposition (PECVD #2)
- Si3N4 [PECVD 2] New Standard Recipe - "STD Si3N4 v3"
- Si3N4 [PECVD 2] Old Standard Recipe - "Nitride2"
- Si3N4 [PECVD 2] Current Process Control Data
- Si3N4 [PECVD 2] Historical Data - Before Oct. 2021
Low-Stress SiN deposition (PECVD #2)
Low-Stress Silicon Nitride, Si3N4 (< ±100 MPa)
- Low Stress Si3N4 [PECVD 2] New Standard Recipe - " STD LS-Si3N4 v4 "
- Low Stress Si3N4 [PECVD 2] Standard Recipe - " Old LSNitride2 recipe "
- Low Stress Si3N4 [PECVD 2] Current Process Control Data
- Plots of Low-Stress Si3N4 Process Control Data
- Low Stress Si3N4 [PECVD 2] Historical Data - Before Oct. 2021
- Old Versions of the recipe:
- LS Nitride2 Standard Recipe 2014-5/9/2018
- STD LSNitride2 5/9/2018
Amorphous-Si deposition (PECVD #2)
Standard Cleaning Procedure (PECVD #2)
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:
- (If >29min dep time) Wet cleaning: Start cleaning by using a cleanroom wipe sprayed with DI. Wipe upper chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA & wiping again.
- Load the recipe for cleaning "STD CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding required time for cleaning.
Standard Clean Recipe (PECVD#2): "STD CF4/O2 Clean"
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will pop up a window for the cleaning time upon running the recipe - you do not need to edit the recipe before running it.
Clean Times (PECVD#2)
| Film Deposited | Cleaning Time (Dry) |
|---|---|
| SiO2 | 1 min. clean for every 1 min. deposition |
| Si3N4 | 1 min. clean for every 7 min of deposition |
| If > 29min total dep time
(Season + Dep) |
Wet Clean the Upper Lid/Chamber
DI water then Isopropyl Alcohol on chamber wall & portholes |
ICP-PECVD (Unaxis VLR)
2020-02: New recipes have been characterized for low particulate count and repeatability. Only staff-supplied recipes are allowed in the tool. Please follow the new procedures to ensure low particle counts in the chamber.
The system currently has Deuterated Silane (SiD4) installed - identical to the regular Silicon precursor SiH4, except that it significantly lowers optical absorption in the near-infrared due to shifted molecular vibrations/molecular weights. This gas is more expensive and thus more applicable to optical application than to general-purpose SiN films.
Process Control Data (Unaxis ICP-PECVD)
- ICP-PECVD Process Control Plots - Plots of all Process Control data
- Low Deposition Rate SiO2
- High Deposition Rate SiO2
- Si3N4
- Low Stress Si3N4
Low Deposition Rate SiO2 [ICP-PECVD]
- Low Deposition Rate SiO2 [ICP-PECVD] - Standard Recipe - "SiO2 LDR250C"
- Low Deposition Rate SiO2 [ICP-PECVD] - Process Control Data
- Low Deposition Rate SiO2 [ICP-PECVD] - Historical Data - before Oct. 2021
High Deposition Rate SiO2 [ICP-PECVD]
- High Deposition Rate SiO2 [ICP-PECVD] - Standard Recipe - "SiO2 HDR250C"
- High Deposition Rate SiO2 [ICP-PECVD] - Current Process Control Data
- High Deposition Rate SiO2 [ICP-PECVD] - Historical Data
Si3N4 [ICP-PECVD]
- Si3N4 [ICP-PECVD] - Standard Recipe - "SiN 250C"
- Si3N4 [ICP-PECVD] - Current Process Control Data
- Si3N4 [ICP-PECVD] - Historical Data - before Oct. 2021
Low Stress Si3N4 [ICP-PECVD]
- Low Stress Si3N4 [ICP-PECVD] - Standard Recipe - "SiN Low Stress 250C"
Standard Cleaning Procedure [ICP-PECVD]
You must edit the Post-Dep Clean recipe to correspond to your deposited thickness and material. See the Operating Procedure on the Unaxis Tool Page for details.
- SiNx etches at 20nm/min
- SiO2 etches at 40nm/min
Standard Clean Recipe
To Be Added
General Recipe Notes (Unaxis VLR ICP-PECVD)
- RF1 = Bias
- RF2 = ICP Power
- All recipes start with an Argon pre-clean with 0W bias (gentle), to improve adhesion/nucleation.
- Maximum SiO2 Dep. thickness allowed: 800nm
- Above this thickness, you must run a chamber clean/season before depositing more onto your product wafer.