Difference between revisions of "PECVD Recipes"

From UCSB Nanofab Wiki
Jump to navigation Jump to search
Line 7: Line 7:
 
<!-- Placeholders - Not uploaded yet-->
 
<!-- Placeholders - Not uploaded yet-->
  
*[[media:New PECVD1-LS SION-recipe 2014 LS SION recipe.pdf|LS SiN Standard Recipe]]
+
*[[media:New PECVD1-LS SIN-Turner05recipe 2014 LS SIN recipe.pdf|LS SiN Standard Recipe]]
 
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEN6LV93LXlnbUhIWU1adVZWMWlXYnc&usp=drive_web#gid=sharing LS SiN Data  2014]
 
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEN6LV93LXlnbUhIWU1adVZWMWlXYnc&usp=drive_web#gid=sharing LS SiN Data  2014]
 
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dElmTXZyOEZsOFdrMVhNLWpKXzVmNWc&usp=sharing LS SiN 1000A Thickness uniformity 2014]
 
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dElmTXZyOEZsOFdrMVhNLWpKXzVmNWc&usp=sharing LS SiN 1000A Thickness uniformity 2014]

Revision as of 16:11, 8 January 2015

Back to Vacuum Deposition Recipes.

PECVD 1 (PlasmaTherm 790)

SiN deposition (PECVD #1)


SiO2 deposition (PECVD #1)

SiOxNy deposition (PECVD #1)

PECVD 2 (Advanced Vacuum)

SiN deposition (PECVD #2)

  • Deposition Rate: ≈ 9.0 nm/min
  • Refractive Index: ≈ 1.952
  • Stress ≈ 484MPa

SiO2 deposition (PECVD #2)

  • Deposition Rate: ≈ 28.0 nm/min
  • Refractive Index: ≈ 1.472
  • Stress ≈ -270MPa

LS SiN deposition (PECVD #2)

  • Deposition Rate: ≈ 8.34 nm/min
  • Refractive Index: ≈ 1.932
  • Stress ≈ -45MPa

Amorphous-Si deposition (PECVD #2)

ICP-PECVD (Unaxis VLR)

SiN deposition (Unaxis VLR)

SiN (2% SiH4)

50° 100° 250°

SiN (2% SiH4 - No-Ar)

50° 100° 250°

SiN (2% SiH4 - No-Ar - Extra N2)

50° 100° 250°

SiN (100% SiH4 )

50° 100° 250°

SiO2 deposition (Unaxis VLR)

SiO2 (2% SiH4)

50° 100° 250°

SiO2 (2% SiH4 - No Ar)

50° 100° 250°

SiO2 (100% SiH4 HDR)

50° 100° 250°

SiO2 (100% SiH4 LDR)

50° 100° 250°

Amorphous Si (100%SiH4 Ar He)

90° 250°