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- ==Process Control Data - InP Ridge Etch (Oxford ICP Etcher)== ...00)|Stepper #2 (AutoStep 200)]] & [[ICP Etch 1 (Panasonic E626I)|Panasonic ICP #1]]8 KB (1,214 words) - 15:38, 12 January 2023
- ...cedure for performing an etch with laser monitor endpoint on the Panasonic ICP etchers.'' ## The locations on ICP#1 and ICP#2 are different.6 KB (876 words) - 14:23, 13 June 2019
- |type = Dry Etch |location=Bay 24 KB (603 words) - 13:09, 22 November 2023
- | colspan="5" |'''ICP#2''': 0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec !Etch Rate (nm/min)7 KB (976 words) - 13:15, 11 January 2023
- ==SiO<sub>2</sub> deposition (PECVD #1)== ...eadsheets/d/1uqpg3sirsRbXdTFlxZ6_k3t0ovP0MtpFtICjpH0-prs/edit#gid= SiO<sub>2</sub><nowiki> [PECVD 1] Standard Recipe</nowiki>]17 KB (2,624 words) - 00:07, 16 December 2021
- {{tool|Laser Etch Monitor (LEP 500) |type = Dry Etch8 KB (1,293 words) - 15:09, 6 December 2023
- : Panasonic ICP #2 : Film will etch in HF884 bytes (133 words) - 14:56, 3 August 2017
- *[[Stepper 2 (AutoStep 200)|Stepper 2 (AutoStep 200, i-line)]] *[[Ovens 1, 2 & 3 (Labline)]]7 KB (844 words) - 11:52, 1 March 2024
- |location=Bay 2 ...and Hydrogen are available for plasma assisted oxides and nitrides. Remote ICP plasma powers up to 600W are possible.3 KB (377 words) - 14:56, 8 March 2023
- |type= Dry Etch |location=Bay 25 KB (861 words) - 15:46, 31 May 2024
- Gas is CF<sub>4</sub> / O<sub>2</sub> (88%/12%) *Etch Rate ≈ 50-100 nm/min. Varies.6 KB (952 words) - 13:23, 15 May 2024
- ...exposed areas. To prevent a wafer from falling into the machine after the etch, you can [[Packaging Recipes#Wafer Bonder .28Logitech WBS7.29|mount to a ca ==High Rate Bosch Etch (DSEIII)==28 KB (4,356 words) - 12:49, 7 May 2024
- ==SiO<sub>2</sub> deposition (PECVD #1)== ...BU1s4JQo2dEw0bjFEdTF2SUhRa25Ca0d0SzBha3c&usp=drive_web#gid=sharing SiO<sub>2</sub> 100nm Data 2014]31 KB (4,516 words) - 00:18, 16 December 2021
- === Oxford PlasmaPro ICP Etcher installed === We have a new ICP etcher in Bay 2:8 KB (1,145 words) - 20:40, 30 October 2023
- ...CP_Etching_Recipes#PlasmaTherm.2FSLR_Fluorine_Etcher|Plasma-Therm Fluorine ICP etcher]], using a novel Ruthenium Hard Mask. ...[[ICP_Etching_Recipes#Ru_.28Ruthenium.29_Etch_.28Panasonic_2.29|Panasonic ICP's]].9 KB (1,258 words) - 14:58, 31 August 2021
- |Co||10(5)||200||0||20||25||0||0||25-9||2.3||-||-||-||- |Ni||5||75||0||20||25||0||0||44-4||2.50||-||-||-||-16 KB (2,290 words) - 21:36, 21 September 2023
- == [https://doi.org/10.1103/PRXQuantum.2.010337 Ultrabright Entangled-Photon-Pair Generation from an AlGaAs-On-Insul [https://doi.org/10.1103/PRXQuantum.2.010337 PRX Quantum, '''2''' 010337 (2021)]7 KB (874 words) - 09:36, 18 August 2022
- Stepper 1 and Stepper 2 are i-line systems with good piece handling capabilities. Stepper 3 i ...s. Post develop bakes (not listed) are used to make the resist more etch resistant and depend on subsequent processes. Care should be taken with pos17 KB (2,294 words) - 17:03, 21 March 2024