Difference between revisions of "Wet Etching Recipes"
Bovington j (talk | contribs) |
(Text replacement - "www.nanotech.ucsb.edu/wiki/" to "wiki.nanotech.ucsb.edu/wiki/") |
||
(39 intermediate revisions by 5 users not shown) | |||
Line 1: | Line 1: | ||
+ | '''See the [https://wiki.nanotech.ucsb.edu/wiki/index.php/Wet_Etching_Recipes#The_Master_Table_of_Wet_Etching_.28Include_All_Materials.29 Master Wet Etching Table]''' at the bottom of this page for wet-etch rates in various experiments we have tested. |
||
− | =Compound Semiconductor Etching= |
||
− | [http://www.google.com/url?sa=t&rct=j&q=&esrc=s&source=web&cd=1&cad=rja&ved=0CC4QFjAA&url=http%3A%2F%2Fwww.nanofab.ubc.ca%2Ffiles%2Fclawson2001_iii-v_etching.pdf&ei=pIp6UobsOOTjiAKIw4G4Cw&usg=AFQjCNHo1MN8BZJmexnKIwpn92Rax6N5Lg&sig2=RK4rXPfIeJgcQEH5HkqWWw&bvm=bv.56146854,d.cGE Guide to references on III±V semiconductor chemical etching] Please add any confirmed etches from this reference to the Master Table of Wet Etching. Thanks, |
||
+ | == References == |
||
− | =Metal Etching= |
||
+ | # [http://ieeexplore.ieee.org/abstract/document/546406/ Etch rates for Micromachining Processing (IEEE Jnl. MEMS, 1996)] - includes tables of etch rates of numerous metals vs. various wet and dry etchants. |
||
+ | # [http://ieeexplore.ieee.org/abstract/document/1257354/ Etch rates for micromachining-Part II (IEEE Jnl. MEMS, 2003)] - expanded tables containing resists, dielectrics, metals and semiconductors vs. many wet etch chemicals. |
||
+ | # [http://www.sciencedirect.com/science/article/pii/S0927796X00000279 Guide to references on III±V semiconductor chemical etching] - exhaustive list of wet etchants for etching various semiconductors, including selective etches. |
||
+ | # [http://transene.com/etch-compatibility/ Transene's Chemical Compatibility Chart] provides a useful quick-reference for which Transene etchants attack which materials. |
||
+ | ## As a side-note, [http://transene.com/ Transene] provides many pre-mixed solutions that you can order, saving you the time and uncertainty of measuring/mixing such chemicals yourself. Make sure you check with us before ordering so we know how to handle the chemical before it arrives. |
||
+ | == Compound Semiconductor Etching == |
||
− | =Silicon etching= |
||
+ | [http://www.sciencedirect.com/science/article/pii/S0927796X00000279 Guide to references on III±V semiconductor chemical etching] |
||
+ | Please add any confirmed etches from this reference to the {{HLink|Wet Etching Recipes|The Master Table of Wet Etching (Include All Materials)}}. |
||
− | =Dielectric etching= |
||
+ | ==Metal Etching== |
||
− | =Organic removal= |
||
+ | *[[media:Ta and Cr E-beam deposition and wet etch test.pdf|Selective Wet Etch of Cr over Ta using Cr Etchant]] |
||
+ | *[[media:ITO Deposition-250C-Ebeam2-HCl-Wet-Etch.pdf|Wet Etch of ITO using Heated, Diluted HCl Solution]] |
||
+ | ==Silicon etching== |
||
− | =Gold Plating= |
||
+ | [http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=546406 Etch rates for micromachining processing] |
||
+ | [http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=1257354 Etch rates for micromachining processing-part II] |
||
− | =Chemi-Mechanical Polishing (CMP)= |
||
+ | Please add any confirmed etches from this reference to the {{HLink|Wet Etching Recipes|The Master Table of Wet Etching (Include All Materials)}}. |
||
+ | ==Dielectric etching== |
||
− | =Example Wet Etching Table= |
||
+ | |||
+ | ==Organic removal== |
||
+ | |||
+ | ==Gold Plating== |
||
+ | |||
+ | ==Chemi-Mechanical Polishing (CMP)== |
||
+ | |||
+ | |||
+ | ==Example Wet Etching Table== |
||
How to use the Master Table of Wet Etching: |
How to use the Master Table of Wet Etching: |
||
Line 26: | Line 44: | ||
! Material !! Etchant !! Rate (nm/min) !! Anisotropy !! Selective to !! Selectivity !! Ref. !! Notes !! Confirmed by !! Extra column |
! Material !! Etchant !! Rate (nm/min) !! Anisotropy !! Selective to !! Selectivity !! Ref. !! Notes !! Confirmed by !! Extra column |
||
|- |
|- |
||
− | | InP|| HCl:H3PO4(1:3)|| ~1000 || Highly || InGaAs || High || |
+ | | InP|| HCl:H3PO4(1:3)|| ~1000 || Highly || InGaAs || High || [http://tel.archives-ouvertes.fr/docs/00/76/94/02/PDF/VA2_LAMPONI_MARCO_15032012.pdf Lamponi (p.102)] || Example || Jon Doe || Example |
|- |
|- |
||
− | | InP|| HCl:H3PO4(1:3)|| ~1000 || Highly || InGaAsP || High || |
+ | | InP|| HCl:H3PO4(1:3)|| ~1000 || Highly || InGaAsP || High || [http://tel.archives-ouvertes.fr/docs/00/76/94/02/PDF/VA2_LAMPONI_MARCO_15032012.pdf Lamponi (p.102)] || Example || Jon Doe || Example |
|- |
|- |
||
− | | InP|| H3PO4:HCl(3:1)|| ~1000 || Highly || InGaAs || High || |
+ | | InP|| H3PO4:HCl(3:1)|| ~1000 || Highly || InGaAs || High || [http://tel.archives-ouvertes.fr/docs/00/76/94/02/PDF/VA2_LAMPONI_MARCO_15032012.pdf Lamponi (p.102)] || Example || Jon Doe || Example |
|- |
|- |
||
− | | InP|| H3PO4:HCl(3:1)|| ~1000 || Highly || InGaAsP || High || |
+ | | InP|| H3PO4:HCl(3:1)|| ~1000 || Highly || InGaAsP || High || [http://tel.archives-ouvertes.fr/docs/00/76/94/02/PDF/VA2_LAMPONI_MARCO_15032012.pdf Lamponi (p.102)] || Example || Jon Doe || Example |
|} |
|} |
||
− | =The Master Table of Wet Etching (Include '''All''' Materials)= |
+ | ==The Master Table of Wet Etching (Include '''All''' Materials)== |
+ | ''Use the ↑ ↓ Arrows in the header row to sort the entire table by material, selectivity, etchant etc.'' |
||
− | |||
{| class="wikitable sortable" |
{| class="wikitable sortable" |
||
|- |
|- |
||
− | ! Material !! Etchant !! Rate (nm/min) !! Anisotropy !! Selective to !! Selectivity !! Ref. !! Notes !! Confirmed by !! Extra |
+ | ! Material !! Etchant !! Rate (nm/min) !! Anisotropy !! Selective to !! Selectivity !! Ref. !! Notes !! Confirmed by !! Extra Notes |
|- |
|- |
||
− | | InP|| HCl:H3PO4(1:3)|| ~1000 || Highly || InGaAs || High || [http://tel.archives-ouvertes.fr/docs/00/76/94/02/PDF/VA2_LAMPONI_MARCO_15032012.pdf Lamponi (p.102)] || Example || Jon Doe || Example |
+ | | InP|| HCl:H3PO4 (1:3)|| ~1000 || Highly || InGaAs || High || [http://tel.archives-ouvertes.fr/docs/00/76/94/02/PDF/VA2_LAMPONI_MARCO_15032012.pdf Lamponi (p.102)] || Example || Jon Doe || Example |
|- |
|- |
||
+ | |InP |
||
− | | InP|| HCl:H3PO4(1:3)|| ~1000 || Highly || InGaAsP || High || [http://tel.archives-ouvertes.fr/docs/00/76/94/02/PDF/VA2_LAMPONI_MARCO_15032012.pdf Lamponi (p.102)] || Example || Jon Doe || Example |
||
+ | |HCl:H3PO4 (1:3) |
||
+ | |~1000 |
||
+ | |Highly |
||
+ | |InGaAsP |
||
+ | |High |
||
+ | |[http://tel.archives-ouvertes.fr/docs/00/76/94/02/PDF/VA2_LAMPONI_MARCO_15032012.pdf Lamponi (p.102)] |
||
+ | |Example |
||
+ | |Jon Doe |
||
+ | |Example |
||
|- |
|- |
||
− | | InP|| H3PO4:HCl(3:1)|| ~1000 || Highly || InGaAs || High || [http://tel.archives-ouvertes.fr/docs/00/76/94/02/PDF/VA2_LAMPONI_MARCO_15032012.pdf Lamponi (p.102)] || Example || Jon Doe || Example |
+ | | InP|| H3PO4:HCl (3:1)|| ~1000 || Highly || InGaAs || High || [http://tel.archives-ouvertes.fr/docs/00/76/94/02/PDF/VA2_LAMPONI_MARCO_15032012.pdf Lamponi (p.102)] || Example || Jon Doe || Example |
|- |
|- |
||
+ | |InP |
||
− | | InP|| H3PO4:HCl(3:1)|| ~1000 || Highly || InGaAsP || High || [http://tel.archives-ouvertes.fr/docs/00/76/94/02/PDF/VA2_LAMPONI_MARCO_15032012.pdf Lamponi (p.102)] || Example || Jon Doe || Example |
||
+ | |H3PO4:HCl (3:1) |
||
+ | |~1000 |
||
+ | |Highly |
||
+ | |InGaAsP |
||
+ | |High |
||
+ | |[http://tel.archives-ouvertes.fr/docs/00/76/94/02/PDF/VA2_LAMPONI_MARCO_15032012.pdf Lamponi (p.102)] |
||
+ | |Example |
||
+ | |Jon Doe |
||
+ | |Example |
||
|- |
|- |
||
− | | Al2O3 (ALD Plasma 300C)|| 300MIF || ~1.6 || |
+ | | Al2O3 ''(ALD Plasma 300C)''|| Developer: 300MIF || ~1.6 || None |
+ | | Most non-Al Materials. |
||
+ | | High || Measured in-house || Rate slows with time. || JTB || Example |
||
|- |
|- |
||
− | | Al2O3 (ALD Plasma 300C)|| 400K || ~2.2 || |
+ | | Al2O3 ''(ALD Plasma 300C)''|| Developer: 400K || ~2.2 || None |
+ | | Most non-Al Materials. |
||
+ | | High || Measured in-house || Rate slows with time. || JTB || Example |
||
|- |
|- |
||
− | | Al2O3 (ALD Plasma 300C)|| 400K(1:4) || ~1.6 || |
+ | | Al2O3 ''(ALD Plasma 300C)''|| Developer: 400K (1:4) || ~1.6 || None |
+ | | Most non-Al Materials. |
||
+ | | High || Measured in-house || Rate slows with time. || JTB || Example |
||
|- |
|- |
||
− | | Al2O3 (ALD Plasma 300C)|| NH4OH:H2O2:H2O (1:2:50) || ~<0.5 || || || |
+ | | Al2O3 ''(ALD Plasma 300C)''|| NH4OH:H2O2:H2O (1:2:50) || ~<0.5 || || |||| Measured in-house || Rate slows with time || JTB || Example |
|- |
|- |
||
+ | |[https://wiki.nanotech.ucsb.edu/wiki/index.php/Sputtering_Recipes#Al2O3_deposition_.28IBD.29 Al2O3 ''(IBD)''] |
||
− | | Al2O3 (ALD Plasma 300C)|| H2O2:NH4OH:H2O (2:1:50) || ~<0.5 || || || High || Measured in-house || Rate slows with time || JTB || Example |
||
+ | |HF ("Buffered HF Improved", Transene) |
||
+ | |~170 |
||
+ | |None |
||
+ | |Photoresist |
||
+ | |High |
||
+ | |Measured in-house |
||
+ | |May need to increase adhesion with thin SiO2 layer, and 100°C baked HMDS. |
||
+ | |Biljana Stamenic |
||
+ | |2017-12 |
||
+ | |- |
||
+ | |[https://wiki.nanotech.ucsb.edu/wiki/index.php/Sputtering_Recipes#Al2O3_deposition_.28IBD.29 Al2O3 ''(IBD)''] |
||
+ | |Developer: 726 MiF |
||
+ | |3.5 |
||
+ | |None |
||
+ | |Most non-Al Materials. |
||
+ | | |
||
+ | |Measured in-house |
||
+ | | |
||
+ | |Demis D. John |
||
+ | |2017-11 |
||
+ | |- |
||
+ | |[https://wiki.nanotech.ucsb.edu/wiki/index.php/Sputtering_Recipes#Al2O3_Deposition_.28Sputter_4.29 Al2O3 ''(AJA#4)''] |
||
+ | |Developer: 300 MiF |
||
+ | |4.30 |
||
+ | |None |
||
+ | |Most non-Al Materials. |
||
+ | | |
||
+ | |Measured in-house |
||
+ | | |
||
+ | |Demis D. John |
||
+ | |2018-02 |
||
+ | |- |
||
+ | |[https://wiki.nanotech.ucsb.edu/wiki/index.php/PECVD_Recipes#SiO2_deposition_.28PECVD_.231.29 SiO2 ''(PECVD #1)''] |
||
+ | |HF ("Buffered HF Improved", Transene) |
||
+ | |~500 |
||
+ | |None |
||
+ | |Photoresist |
||
+ | |High |
||
+ | |Measured in-house |
||
+ | |May need to increase adhesion with 100°C baked HMDS. |
||
+ | |Biljana Stamenic |
||
+ | |2017 |
||
+ | |- |
||
+ | |[https://wiki.nanotech.ucsb.edu/wiki/index.php/PECVD_Recipes#SiO2_deposition_.28PECVD_.232.29 SiO2 ''(PECVD #2)''] |
||
+ | |HF ("Buffered HF Improved", Transene) |
||
+ | |~500 |
||
+ | |None |
||
+ | |Photoresist |
||
+ | |High |
||
+ | |Measured in-house |
||
+ | |May need to increase adhesion with 100°C baked HMDS. |
||
+ | |Biljana Stamenic |
||
+ | |2017 |
||
+ | |- |
||
+ | |[https://wiki.nanotech.ucsb.edu/wiki/index.php/Sputtering_Recipes#SiO2_deposition_.28IBD.29 SiO2 (IBD)] |
||
+ | |HF ("Buffered HF Improved", Transene) |
||
+ | |~350 |
||
+ | |None |
||
+ | |Photoresist |
||
+ | |High |
||
+ | |Measured in-house |
||
+ | | |
||
+ | |Biljana Stamenic |
||
+ | |2016 |
||
+ | |- |
||
+ | |[https://wiki.nanotech.ucsb.edu/wiki/index.php/PECVD_Recipes#SiN_deposition_.28PECVD_.231.29 Si3N4 (PECVD#1)] |
||
+ | |HF ("Buffered HF Improved", Transene) |
||
+ | |85 |
||
+ | |None |
||
+ | |Photoresist |
||
+ | |High |
||
+ | |Measured in-house |
||
+ | | |
||
+ | |Biljana Stamenic |
||
+ | |2018-04 |
||
+ | |- |
||
+ | |[https://wiki.nanotech.ucsb.edu/wiki/index.php/PECVD_Recipes#SiN_deposition_.28PECVD_.232.29 Si3N4 (PECVD#2)] |
||
+ | |HF ("Buffered HF Improved", Transene) |
||
+ | |35–45 |
||
+ | |None |
||
+ | |Photoresist |
||
+ | |High |
||
+ | |Measured in-house |
||
+ | | |
||
+ | |Biljana Stamenic |
||
+ | |2018-05 |
||
+ | |- |
||
+ | |[https://wiki.nanotech.ucsb.edu/wiki/index.php/PECVD_Recipes#Low-Stress_SiN_deposition_.28PECVD_.232.29 Si3N4 Low-Stress (PECVD#2)] |
||
+ | |HF ("Buffered HF Improved", Transene) |
||
+ | |35–50 |
||
+ | |None |
||
+ | |Photoresist |
||
+ | |High |
||
+ | |Measured in-house |
||
+ | | |
||
+ | |Biljana Stamenic |
||
+ | |2018-05 |
||
+ | |- |
||
+ | |[https://wiki.nanotech.ucsb.edu/wiki/index.php/Sputtering_Recipes#Si3N4_deposition_.28IBD.29 Si3N4 (IBD)] |
||
+ | |HF ("Buffered HF Improved", Transene) |
||
+ | |5–15 |
||
+ | |None |
||
+ | |Photoresist |
||
+ | |High |
||
+ | |Measured in-house |
||
+ | | |
||
+ | |Biljana Stamenic |
||
+ | |2014 |
||
+ | |- |
||
+ | |[https://wiki.nanotech.ucsb.edu/wiki/index.php/Sputtering_Recipes#Ta2O5_deposition_.28IBD.29 Ta2O5 (IBD)] |
||
+ | |HF ("Buffered HF Improved", Transene) |
||
+ | |0.4 |
||
+ | |None |
||
+ | |Photoresist |
||
+ | |High |
||
+ | |Measured in-house |
||
+ | | |
||
+ | |Biljana Stamenic |
||
+ | |2016-12 |
||
+ | |- |
||
+ | |[https://wiki.nanotech.ucsb.edu/wiki/index.php/Sputtering_Recipes#TiO2_deposition_.28IBD.29 TiO2 (IBD)] |
||
+ | |HF ("Buffered HF Improved", Transene) |
||
+ | |1.0–2.0 |
||
+ | |None |
||
+ | |Photoresist |
||
+ | |High |
||
+ | |Measured in-house |
||
+ | | |
||
+ | |Biljana Stamenic |
||
+ | |2014-12 |
||
+ | |- |
||
+ | |Si (<100> crystalline) |
||
+ | |KOH (45%) @ 87°C |
||
+ | |~730 |
||
+ | |High, Crystallographic |
||
+ | |Si3N4 - any PECVD or LPCVD Nitride |
||
+ | |High |
||
+ | |Measured In-House |
||
+ | |Use Covered, Heated vertical bath (Bay 4). Slight Bubbler. |
||
+ | |Brian Thibeault |
||
+ | |2017 |
||
|} |
|} |
||
+ | |||
+ | [[Category:Processing]] |
Revision as of 18:29, 6 April 2020
See the Master Wet Etching Table at the bottom of this page for wet-etch rates in various experiments we have tested.
References
- Etch rates for Micromachining Processing (IEEE Jnl. MEMS, 1996) - includes tables of etch rates of numerous metals vs. various wet and dry etchants.
- Etch rates for micromachining-Part II (IEEE Jnl. MEMS, 2003) - expanded tables containing resists, dielectrics, metals and semiconductors vs. many wet etch chemicals.
- Guide to references on III±V semiconductor chemical etching - exhaustive list of wet etchants for etching various semiconductors, including selective etches.
- Transene's Chemical Compatibility Chart provides a useful quick-reference for which Transene etchants attack which materials.
- As a side-note, Transene provides many pre-mixed solutions that you can order, saving you the time and uncertainty of measuring/mixing such chemicals yourself. Make sure you check with us before ordering so we know how to handle the chemical before it arrives.
Compound Semiconductor Etching
Guide to references on III±V semiconductor chemical etching
Please add any confirmed etches from this reference to the The Master Table of Wet Etching (Include All Materials).
Metal Etching
- Selective Wet Etch of Cr over Ta using Cr Etchant
- Wet Etch of ITO using Heated, Diluted HCl Solution
Silicon etching
Etch rates for micromachining processing
Etch rates for micromachining processing-part II
Please add any confirmed etches from this reference to the The Master Table of Wet Etching (Include All Materials).
Dielectric etching
Organic removal
Gold Plating
Chemi-Mechanical Polishing (CMP)
Example Wet Etching Table
How to use the Master Table of Wet Etching:
When entering a new etch into the table make a row for every etchant used in the solution such that the information can be sorted by etchant. For example, the InP etch HCl:H3PO4(1:3) and H3PO4:HCl(3:1). Likewise, if etch is known to be selective to multiple materials the etch should have a row for each material. For example HCl:H3PO4(1:3) is selective to both InGaAs and InGaAsP.
This multiple entry method may seem laborious for the person entering a new etch, however the power of sorting by selective materials and chemicals in a table with all materials is great.
Material | Etchant | Rate (nm/min) | Anisotropy | Selective to | Selectivity | Ref. | Notes | Confirmed by | Extra column |
---|---|---|---|---|---|---|---|---|---|
InP | HCl:H3PO4(1:3) | ~1000 | Highly | InGaAs | High | Lamponi (p.102) | Example | Jon Doe | Example |
InP | HCl:H3PO4(1:3) | ~1000 | Highly | InGaAsP | High | Lamponi (p.102) | Example | Jon Doe | Example |
InP | H3PO4:HCl(3:1) | ~1000 | Highly | InGaAs | High | Lamponi (p.102) | Example | Jon Doe | Example |
InP | H3PO4:HCl(3:1) | ~1000 | Highly | InGaAsP | High | Lamponi (p.102) | Example | Jon Doe | Example |
The Master Table of Wet Etching (Include All Materials)
Use the ↑ ↓ Arrows in the header row to sort the entire table by material, selectivity, etchant etc.
Material | Etchant | Rate (nm/min) | Anisotropy | Selective to | Selectivity | Ref. | Notes | Confirmed by | Extra Notes |
---|---|---|---|---|---|---|---|---|---|
InP | HCl:H3PO4 (1:3) | ~1000 | Highly | InGaAs | High | Lamponi (p.102) | Example | Jon Doe | Example |
InP | HCl:H3PO4 (1:3) | ~1000 | Highly | InGaAsP | High | Lamponi (p.102) | Example | Jon Doe | Example |
InP | H3PO4:HCl (3:1) | ~1000 | Highly | InGaAs | High | Lamponi (p.102) | Example | Jon Doe | Example |
InP | H3PO4:HCl (3:1) | ~1000 | Highly | InGaAsP | High | Lamponi (p.102) | Example | Jon Doe | Example |
Al2O3 (ALD Plasma 300C) | Developer: 300MIF | ~1.6 | None | Most non-Al Materials. | High | Measured in-house | Rate slows with time. | JTB | Example |
Al2O3 (ALD Plasma 300C) | Developer: 400K | ~2.2 | None | Most non-Al Materials. | High | Measured in-house | Rate slows with time. | JTB | Example |
Al2O3 (ALD Plasma 300C) | Developer: 400K (1:4) | ~1.6 | None | Most non-Al Materials. | High | Measured in-house | Rate slows with time. | JTB | Example |
Al2O3 (ALD Plasma 300C) | NH4OH:H2O2:H2O (1:2:50) | ~<0.5 | Measured in-house | Rate slows with time | JTB | Example | |||
Al2O3 (IBD) | HF ("Buffered HF Improved", Transene) | ~170 | None | Photoresist | High | Measured in-house | May need to increase adhesion with thin SiO2 layer, and 100°C baked HMDS. | Biljana Stamenic | 2017-12 |
Al2O3 (IBD) | Developer: 726 MiF | 3.5 | None | Most non-Al Materials. | Measured in-house | Demis D. John | 2017-11 | ||
Al2O3 (AJA#4) | Developer: 300 MiF | 4.30 | None | Most non-Al Materials. | Measured in-house | Demis D. John | 2018-02 | ||
SiO2 (PECVD #1) | HF ("Buffered HF Improved", Transene) | ~500 | None | Photoresist | High | Measured in-house | May need to increase adhesion with 100°C baked HMDS. | Biljana Stamenic | 2017 |
SiO2 (PECVD #2) | HF ("Buffered HF Improved", Transene) | ~500 | None | Photoresist | High | Measured in-house | May need to increase adhesion with 100°C baked HMDS. | Biljana Stamenic | 2017 |
SiO2 (IBD) | HF ("Buffered HF Improved", Transene) | ~350 | None | Photoresist | High | Measured in-house | Biljana Stamenic | 2016 | |
Si3N4 (PECVD#1) | HF ("Buffered HF Improved", Transene) | 85 | None | Photoresist | High | Measured in-house | Biljana Stamenic | 2018-04 | |
Si3N4 (PECVD#2) | HF ("Buffered HF Improved", Transene) | 35–45 | None | Photoresist | High | Measured in-house | Biljana Stamenic | 2018-05 | |
Si3N4 Low-Stress (PECVD#2) | HF ("Buffered HF Improved", Transene) | 35–50 | None | Photoresist | High | Measured in-house | Biljana Stamenic | 2018-05 | |
Si3N4 (IBD) | HF ("Buffered HF Improved", Transene) | 5–15 | None | Photoresist | High | Measured in-house | Biljana Stamenic | 2014 | |
Ta2O5 (IBD) | HF ("Buffered HF Improved", Transene) | 0.4 | None | Photoresist | High | Measured in-house | Biljana Stamenic | 2016-12 | |
TiO2 (IBD) | HF ("Buffered HF Improved", Transene) | 1.0–2.0 | None | Photoresist | High | Measured in-house | Biljana Stamenic | 2014-12 | |
Si (<100> crystalline) | KOH (45%) @ 87°C | ~730 | High, Crystallographic | Si3N4 - any PECVD or LPCVD Nitride | High | Measured In-House | Use Covered, Heated vertical bath (Bay 4). Slight Bubbler. | Brian Thibeault | 2017 |