Vacuum Deposition Recipes
Revision as of 10:09, 18 July 2012 by Zwarburg (talk | contribs) (→Table (This heading is temporary))
This table can be used to help located the needed recipe.
Table (This heading is temporary)
Sputtering
Thermal Evaporation
Plasma Enhanced Chemical Vapor Deposition (PECVD)
SiN deposition (PECVD #1)
- Clean (30CLN_SN)
- Initial t=10", p=2x10-2, T=250C
- N2 Purge t=30", p=300mT
- evacuate, base pressure=2x10-2, t=10"
- loop
- gas stabilization, t=30"
- etch chamber, t=30'
- evacuate, t=10"
- N2 purge
- evacuate
- loop
- SiN gas stabilization
- SiN deposition( 200A coat)
- evacuate
- N2 purge, t=30"
- end
- SiN deposition (SiN_10) 130.8 A/min
- Initial t=10"
- N2 purge t=30"
- evacuate, t=10"
- loop
- SiN gas stabilization, t=30"
- SiN deposition t=8'11.2"
- evacuate, t=10"
- N2 purge t=30"
- evacuate t=10"
- loop
SiO2 deposition (PECVD #1)
- Clean (30CLN_SN)
- Initial t=10", p=2x10-2, T=250C
- N2 Purge t=30", p=300mT
- evacuate, base pressure=2x10-2, t=10"
- loop
- gas stabilization, t=30"
- etch chamber, t=30'
- evacuate, t=10"
- N2 purge
- evacuate
- loop
- SiO2 gas stabilization
- SiO2 deposition( 200A coat)
- evacuate
- N2 purge, t=30"
- end
- SiO2 deposition (SiO2_10) 440.5 A/min
- Initial t=10"
- N2 purge t=30"
- evacuate, t=10"
- loop
- SiO2 gas stabilization, t=30"
- SiO2 deposition t=8'11.2"
- evacuate, t=10"
- N2 purge t=30"
- evacuate t=10"
- loop
SiN deposition (PECVD #2)
- Standard clean
- Pump down: stabilization time t=15", step time(m)=0', step time(s)=30"
- Pre-purge: purge=1, stabilization time=15, step time(m)=1, step time(sec)=0
- High Pressure: process pressure=600, RF point=300, stabilization time=35, step time(m)=30, step time(s)=0, CF4/O2(5)=500
- Low pressure: process pressure=300, RF setpoint=300, stabilization time=15, step time(m)=30, step time(s)=0, CF4/O2(5)=500
- Nitride 2 (HF, n=2.0, 93nm/min)
- process pressure=800, RF setpoint=30, stabilization time=15, step time(m)=10, step time(s)=0, 2%SiH4%He(1)=1040, N2(3)=980, NH3(2)=17
SiO2 deposition (PECVD #2)
- Standard clean
- Pump down: stabilization time t=15", step time(m)=0', step time(s)=30"
- Pre-purge: purge=1, stabilization time=15, step time(m)=1, step time(sec)=0
- High Pressure: process pressure=600, RF point=300, stabilization time=35, step time(m)=30, step time(s)=0, CF4/O2(5)=500
- Low pressure: process pressure=300, RF setpoint=300, stabilization time=15, step time(m)=30, step time(s)=0, CF4/O2(5)=500
- Oxide (HF, n=1.46, 25nm/min)
- process pressure=800, RF setpoint=30, stabilization time=15, step time(m)=10, step time(s)=0, 2%SiH4%He(1)=600, N2O(4)=1420