Difference between revisions of "Vacuum Deposition Recipes"
Jump to navigation
Jump to search
| Line 796: | Line 796: | ||
|- |
|- |
||
|} |
|} |
||
| − | |||
| − | = Plasma Enhanced Chemical Vapor Deposition (PECVD) = |
||
| − | |||
| − | == SiN deposition (PECVD #1) == |
||
| − | |||
| − | #'''Clean''' (30CLN_SN) |
||
| − | ##Initial t=10", p=2x10-2, T=250C |
||
| − | ##N<sub>2</sub> Purge t=30", p=300mT |
||
| − | ##evacuate, base pressure=2x10-2, t=10" |
||
| − | ##loop |
||
| − | ##gas stabilization, t=30" |
||
| − | ##etch chamber, t=30' |
||
| − | ##evacuate, t=10" |
||
| − | ##N<sub>2</sub> purge |
||
| − | ##evacuate |
||
| − | ##loop |
||
| − | ##SiN gas stabilization |
||
| − | ##SiN deposition( 200A coat) |
||
| − | ##evacuate |
||
| − | ##N<sub>2</sub> purge, t=30" |
||
| − | ##end |
||
| − | #'''SiN deposition''' (SiN_10) 130.8 A/min |
||
| − | ##Initial t=10" |
||
| − | ##N<sub>2</sub> purge t=30" |
||
| − | ##evacuate, t=10" |
||
| − | ##loop |
||
| − | ##SiN gas stabilization, t=30" |
||
| − | ##SiN deposition t=8'11.2" |
||
| − | ##evacuate, t=10" |
||
| − | ##N<sub>2</sub> purge t=30" |
||
| − | ##evacuate t=10" |
||
| − | ##loop |
||
| − | == SiO<sub>2</sub> deposition (PECVD #1) == |
||
| − | |||
| − | #'''Clean''' (30CLN_SN) |
||
| − | ##Initial t=10", p=2x10-2, T=250C |
||
| − | ##N<sub>2</sub> Purge t=30", p=300mT |
||
| − | ##evacuate, base pressure=2x10-2, t=10" |
||
| − | ##loop |
||
| − | ##gas stabilization, t=30" |
||
| − | ##etch chamber, t=30' |
||
| − | ##evacuate, t=10" |
||
| − | ##N<sub>2</sub> purge |
||
| − | ##evacuate |
||
| − | ##loop |
||
| − | ##SiO<sub>2</sub> gas stabilization |
||
| − | ##SiO<sub>2</sub> deposition( 200A coat) |
||
| − | ##evacuate |
||
| − | ##N<sub>2</sub> purge, t=30" |
||
| − | ##end |
||
| − | #'''SiO<sub>2</sub> deposition''' (SiO2_10) 440.5 A/min |
||
| − | ##Initial t=10" |
||
| − | ##N<sub>2</sub> purge t=30" |
||
| − | ##evacuate, t=10" |
||
| − | ##loop |
||
| − | ##SiO<sub>2</sub> gas stabilization, t=30" |
||
| − | ##SiO<sub>2</sub> deposition t=8'11.2" |
||
| − | ##evacuate, t=10" |
||
| − | ##N<sub>2</sub> purge t=30" |
||
| − | ##evacuate t=10" |
||
| − | ##loop |
||
| − | |||
| − | == SiN deposition (PECVD #2) == |
||
| − | |||
| − | #'''Standard clean''' |
||
| − | ##'''Pump down''': stabilization time t=15", step time(m)=0', step time(s)=30" |
||
| − | ##'''Pre-purge''': purge=1, stabilization time=15, step time(m)=1, step time(sec)=0 |
||
| − | ##'''High Pressure''': process pressure=600, RF point=300, stabilization time=35, step time(m)=30, step time(s)=0, CF4/O2(5)=500 |
||
| − | ##'''Low pressure''': process pressure=300, RF setpoint=300, stabilization time=15, step time(m)=30, step time(s)=0, CF4/O2(5)=500 |
||
| − | #'''Nitride 2''' (HF, n=2.0, 93nm/min) |
||
| − | ##process pressure=800, RF setpoint=30, stabilization time=15, step time(m)=10, step time(s)=0, 2%SiH4%He(1)=1040, N2(3)=980, NH3(2)=17 |
||
| − | |||
| − | == SiO<sub>2</sub> deposition (PECVD #2) == |
||
| − | |||
| − | #'''Standard clean''' |
||
| − | ##'''Pump down''': stabilization time t=15", step time(m)=0', step time(s)=30" |
||
| − | ##'''Pre-purge''': purge=1, stabilization time=15, step time(m)=1, step time(sec)=0 |
||
| − | ##'''High Pressure''': process pressure=600, RF point=300, stabilization time=35, step time(m)=30, step time(s)=0, CF4/O2(5)=500 |
||
| − | ##'''Low pressure''': process pressure=300, RF setpoint=300, stabilization time=15, step time(m)=30, step time(s)=0, CF4/O2(5)=500 |
||
| − | #'''Oxide''' (HF, n=1.46, 25nm/min) |
||
| − | ##process pressure=800, RF setpoint=30, stabilization time=15, step time(m)=10, step time(s)=0, 2%SiH4%He(1)=600, N2O(4)=1420 |
||
| − | |||
| − | = Atomic Layer Deposition (ALD) = |
||
| − | |||
| − | = Ion-Beam Deposition (IBD) = |
||
| − | |||
| − | = Molecular Vapor Deposition (MVD) = |
||
Revision as of 10:29, 18 July 2012
This table can be used to help located the needed recipe.