Difference between revisions of "Vacuum Deposition Recipes"

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| width="75" | [[Sputter 4 (ATC 2200-V)|Sputter 4<br>(ATC 2200-V)]]
 
| width="75" | [[Sputter 4 (ATC 2200-V)|Sputter 4<br>(ATC 2200-V)]]
 
| width="85" | [[Sputter 5 (Lesker AXXIS)]]
 
| width="85" | [[Sputter 5 (Lesker AXXIS)]]
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| width="65" | [[Thermal 1]]
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| width="65" | [[Thermal Evap 1]]
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| width="65" | [[Thermal 2]]
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| width="65" | [[Thermal Evap 2 (Solder)]]
 
| width="115" | [[PECVD 1 (PlasmaTherm 790)|PECVD 1<br>(PlasmaTherm 790)]]
 
| width="115" | [[PECVD 1 (PlasmaTherm 790)|PECVD 1<br>(PlasmaTherm 790)]]
 
| width="115" | [[PECVD 2 (Advanced Vacuum)|PECVD 2<br>(Advanced Vacuum)]]
 
| width="115" | [[PECVD 2 (Advanced Vacuum)|PECVD 2<br>(Advanced Vacuum)]]

Revision as of 10:09, 18 July 2012

This table can be used to help located the needed recipe.

Table (This heading is temporary)

Vacuum Deposition Recipes

 E-Beam Evaporation Sputtering Thermal Evaporation Plasma Enhanced Chemical
Vapor Deposition (PECVD) 		Atomic Layer Deposition Ion-Beam Deposition (IBD) Molecular Vapor Deposition
Material E-Beam 1 (Sharon) E-Beam 2 (Custom) E-Beam 3 (Temescal) E-Beam 4 (CHA) Sputter 1 (Custom) Sputter 2
(SFI Endeavor) 		Sputter 3
(ATC 2000-F) 		Sputter 4
(ATC 2200-V) 		Sputter 5 (Lesker AXXIS) Thermal Evap 1 Thermal Evap 2 (Solder) PECVD 1
(PlasmaTherm 790) 		PECVD 2
(Advanced Vacuum) 		Unaxis VLR ICP-PECVD
Ag
Al
















Al2O3
AlN
















Au
B
















Co
Cr
















Cu
Fe
















Ge
Hf
















HfO2
In
















Ir
ITO
Mo
Nb
Ni
Pd
Pt
Ru
Si
SiN Y Y
SiO2 Y Y
SiOxNy
Sn
SrF2
Ta
Ta2O5
Ti
TiN
TiO2
V
W
Zn
ZnO2
Zr
ZrO2
Material E-Beam 1 (Sharon) E-Beam 2 (Custom) E-Beam 3 (Temescal) E-Beam 4 (CHA) Sputter 1 (Custom) Sputter 2
(SFI Endeavor) 		Sputter 3
(ATC 2000-F) 		Sputter 4
(ATC 2200-V) 		Sputter 5 (Lesker AXXIS) Thermal 1 Thermal 2 PECVD 1
(PlasmaTherm 790) 		PECVD 2
(Advanced Vacuum) 		Unaxis VLR ICP-PECVD Atomic Layer Deposision Ion Beam Deposition Molecular Vapor Deposition

Sputtering

Thermal Evaporation

Plasma Enhanced Chemical Vapor Deposition (PECVD)

SiN deposition (PECVD #1)

  1. Clean (30CLN_SN)
    1. Initial t=10", p=2x10-2, T=250C
    2. N2 Purge t=30", p=300mT
    3. evacuate, base pressure=2x10-2, t=10"
    4. loop
    5. gas stabilization, t=30"
    6. etch chamber, t=30'
    7. evacuate, t=10"
    8. N2 purge
    9. evacuate
    10. loop
    11. SiN gas stabilization
    12. SiN deposition( 200A coat)
    13. evacuate
    14. N2 purge, t=30"
    15. end
  2. SiN deposition (SiN_10) 130.8 A/min
    1. Initial t=10"
    2. N2 purge t=30"
    3. evacuate, t=10"
    4. loop
    5. SiN gas stabilization, t=30"
    6. SiN deposition t=8'11.2"
    7. evacuate, t=10"
    8. N2 purge t=30"
    9. evacuate t=10"
    10. loop

SiO2 deposition (PECVD #1)

  1. Clean (30CLN_SN)
    1. Initial t=10", p=2x10-2, T=250C
    2. N2 Purge t=30", p=300mT
    3. evacuate, base pressure=2x10-2, t=10"
    4. loop
    5. gas stabilization, t=30"
    6. etch chamber, t=30'
    7. evacuate, t=10"
    8. N2 purge
    9. evacuate
    10. loop
    11. SiO2 gas stabilization
    12. SiO2 deposition( 200A coat)
    13. evacuate
    14. N2 purge, t=30"
    15. end
  2. SiO2 deposition (SiO2_10) 440.5 A/min
    1. Initial t=10"
    2. N2 purge t=30"
    3. evacuate, t=10"
    4. loop
    5. SiO2 gas stabilization, t=30"
    6. SiO2 deposition t=8'11.2"
    7. evacuate, t=10"
    8. N2 purge t=30"
    9. evacuate t=10"
    10. loop

SiN deposition (PECVD #2)

  1. Standard clean
    1. Pump down: stabilization time t=15", step time(m)=0', step time(s)=30"
    2. Pre-purge: purge=1, stabilization time=15, step time(m)=1, step time(sec)=0
    3. High Pressure: process pressure=600, RF point=300, stabilization time=35, step time(m)=30, step time(s)=0, CF4/O2(5)=500
    4. Low pressure: process pressure=300, RF setpoint=300, stabilization time=15, step time(m)=30, step time(s)=0, CF4/O2(5)=500
  2. Nitride 2 (HF, n=2.0, 93nm/min)
    1. process pressure=800, RF setpoint=30, stabilization time=15, step time(m)=10, step time(s)=0, 2%SiH4%He(1)=1040, N2(3)=980, NH3(2)=17

SiO2 deposition (PECVD #2)

  1. Standard clean
    1. Pump down: stabilization time t=15", step time(m)=0', step time(s)=30"
    2. Pre-purge: purge=1, stabilization time=15, step time(m)=1, step time(sec)=0
    3. High Pressure: process pressure=600, RF point=300, stabilization time=35, step time(m)=30, step time(s)=0, CF4/O2(5)=500
    4. Low pressure: process pressure=300, RF setpoint=300, stabilization time=15, step time(m)=30, step time(s)=0, CF4/O2(5)=500
  2. Oxide (HF, n=1.46, 25nm/min)
    1. process pressure=800, RF setpoint=30, stabilization time=15, step time(m)=10, step time(s)=0, 2%SiH4%He(1)=600, N2O(4)=1420

Atomic Layer Deposition (ALD)

Ion-Beam Deposition (IBD)

Molecular Vapor Deposition (MVD)

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