Difference between revisions of "UV Ozone Reactor"

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{{tool|{{PAGENAME}}
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{{tool2|{{PAGENAME}}
 
|picture=Ozone.jpg
 
|picture=Ozone.jpg
 
|type = Dry Etch  
 
|type = Dry Etch  
 
|super= Lee Sawyer
 
|super= Lee Sawyer
|model=M-144AX
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|super2= Tony Bosch
 +
|model=144AX
 
|location=Bay 5
 
|location=Bay 5
|description = UV Ozone Reactor
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|description = UV Ozone Cleaner
 
|manufacturer = Jelight
 
|manufacturer = Jelight
 
}}  
 
}}  
== About ==
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==About==
The UV Ozone is manufactured by Jelight, model M-144AX. It can be used for Oxygen activation, etching or oxidation of a surface without ion bombardment.
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UV+O (atomic oxygen) cleaning method is a photosensitized oxidation process in which the contaminant molecules of photo-resists, resins, human skin oils, cleaning solvent residues, silicone oils, and flux are excited and/or dissociated by the absorption of short-wavelength UV radiation. Near atomically clean surfaces can be achieved in less than one minute. In addition, this process does not damage any sensitive device structures of MOS gate oxide. The system can be used for oxygen activation, etching or oxidation of a surface without ion bombardment.
  
== Operating Procedures ==
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==Documentation==
* [[UV Ozone Quick Start|Quick Start]]
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* [[Media:UV Ozone Manual Jelight M-144AX.pdf|UV Ozone Manual]]
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*[[UV Ozone Quick Start|Quick Start]]
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*[//wiki.nanotech.ucsb.edu/wiki/images/7/79/UV_Ozone_Manual_Jelight_M-144AX.pdf UV Ozone Manual]

Latest revision as of 09:09, 8 September 2022

UV Ozone Reactor
Ozone.jpg
Location Bay 5
Tool Type Dry Etch
Manufacturer Jelight
Model 144AX
Description UV Ozone Cleaner

Primary Supervisor Lee Sawyer
(805) 893-2123
lee_sawyer@ucsb.edu

Secondary Supervisor

Tony Bosch


Recipes Dry Etch RecipesN/A


About

UV+O (atomic oxygen) cleaning method is a photosensitized oxidation process in which the contaminant molecules of photo-resists, resins, human skin oils, cleaning solvent residues, silicone oils, and flux are excited and/or dissociated by the absorption of short-wavelength UV radiation. Near atomically clean surfaces can be achieved in less than one minute. In addition, this process does not damage any sensitive device structures of MOS gate oxide. The system can be used for oxygen activation, etching or oxidation of a surface without ion bombardment.

Documentation