Difference between revisions of "Test Data of etching SiO2 with CHF3/CF4/O2 (using this recipe only for Fluorine etch of the underneath layer)"
Jump to navigation
Jump to search
| Line 14: | Line 14: | ||
|77.9 |
|77.9 |
||
|- |
|- |
||
| − | |1/28/ |
+ | |1/28/2019 |
|I21902 |
|I21902 |
||
|92.1 |
|92.1 |
||
Revision as of 12:22, 29 January 2019
| ICP#2: 0.5Pa, 50/500W, CHF3/CF4/O2=35/5/10sccm, time=210 sec | ||||
| Date | Sample# | Etch Rate (nm/min) | Etch Selectivity (SiO2/PR) | Averaged Sidewall Angle (o) |
| 10/5/2018 | SiO2#01 | 95.2 | 0.74 | 77.9 |
| 1/28/2019 | I21902 | 92.1 | 0.77 | |