Difference between revisions of "Test Data of etching SiO2 with CHF3/CF4-ICP1"
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(Created page with "{| class="wikitable" | colspan="5" |ICP#1: 0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec |- |Date |Sample# |Etch Rate (nm/min) |Etch Selectivity (SiO2/PR) |Averaged Si...") |
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Revision as of 12:09, 29 January 2019
ICP#1: 0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec | ||||
Date | Sample# | Etch Rate (nm/min) | Etch Selectivity (SiO2/PR) | Averaged Sidewall Angle (o) |
1/28/19 | I11901 | 110 | 1.35 |