Difference between revisions of "Test Data of etching SiO2 with CHF3/CF4-ICP1"
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|[https://wiki.nanotech.ucsb.edu/wiki/images/b/bb/I1200107.pdf] |
|[https://wiki.nanotech.ucsb.edu/wiki/images/b/bb/I1200107.pdf] |
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− | | colspan="6" |1/13 |
+ | | colspan="6" |Rate on 1/13/2020 is low by ~20%, so chamber was wet-cleaned on 1/21/2020. Data below for 1/23 shows rate returned to "normal". |
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|1/23/2020 |
|1/23/2020 |
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|56.6 |
|56.6 |
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|[https://wiki.nanotech.ucsb.edu/wiki/images/e/ec/I1200301.pdf] |
|[https://wiki.nanotech.ucsb.edu/wiki/images/e/ec/I1200301.pdf] |
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+ | | colspan="6" |Sidewall profile on 2/28/2020 etches is slanted, chamber will be wet-cleaned on 3/4/2020 and re-tested. |
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Revision as of 16:12, 28 February 2020
ICP#1: 0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec | |||||
Date | Sample# | Etch Rate (nm/min) | Etch Selectivity (SiO2/PR) | Averaged Sidewall Angle (o) | SEM Images |
1/28/2019 | I11901 | 110 | 1.35 | [1] | |
5/29/2019 | I11903 | 105 | 1.41 | [2] | |
1/13/2020 | I12001 | 78.0 | 1.06 | [3] | |
Rate on 1/13/2020 is low by ~20%, so chamber was wet-cleaned on 1/21/2020. Data below for 1/23 shows rate returned to "normal". | |||||
1/23/2020 | I12002 | 109 | 1.16 | [4] | |
2/28/2020 | I12003 | 119 | 1.17 | 56.6 | [5] |
Sidewall profile on 2/28/2020 etches is slanted, chamber will be wet-cleaned on 3/4/2020 and re-tested. |