Difference between revisions of "Test Data of etching SiO2 with CHF3/CF4-Florine"
Jump to navigation
Jump to search
(Created page with "{| class="wikitable" | colspan="5" |ICP#2: 0.5Pa, 50/500W, CHF3/CF4/O2=35/5/10sccm, time=210 sec |- |Date |Sample# |Etch Rate (nm/min) |Etch Selectivity (SiO2/PR) |Averaged...") |
|||
(2 intermediate revisions by the same user not shown) | |||
Line 1: | Line 1: | ||
{| class="wikitable" |
{| class="wikitable" |
||
− | | colspan="5" |ICP |
+ | | colspan="5" |Florine ICP: 3.8mT, 50/800W, CHF3/CF4=10/30sccm, and Time=90 sec |
+ | | |
||
|- |
|- |
||
|Date |
|Date |
||
Line 7: | Line 8: | ||
|Etch Selectivity (SiO2/PR) |
|Etch Selectivity (SiO2/PR) |
||
|Averaged Sidewall Angle (<sup>o</sup>) |
|Averaged Sidewall Angle (<sup>o</sup>) |
||
+ | |SEM Images |
||
|- |
|- |
||
− | | |
+ | |1/29/2021 |
+ | |FE2102 |
||
− | |SiO2#01 |
||
+ | |309 |
||
− | |95.2 |
||
− | |0. |
+ | |0.99 |
+ | | |
||
− | |77.9 |
||
+ | | |
||
|} |
|} |
Latest revision as of 18:33, 2 February 2021
Florine ICP: 3.8mT, 50/800W, CHF3/CF4=10/30sccm, and Time=90 sec | |||||
Date | Sample# | Etch Rate (nm/min) | Etch Selectivity (SiO2/PR) | Averaged Sidewall Angle (o) | SEM Images |
1/29/2021 | FE2102 | 309 | 0.99 |