Difference between revisions of "Test Data of etching SiO2 with CHF3/CF4"

From UCSB Nanofab Wiki
Jump to navigation Jump to search
(add a SEM)
(a comment added)
Line 49: Line 49:
 
|102
 
|102
 
|0.86
 
|0.86
|
+
|air leaking to CHF3 channel
 
|[https://wiki.nanotech.ucsb.edu/w/images/d/d4/I2200203.pdf]
 
|[https://wiki.nanotech.ucsb.edu/w/images/d/d4/I2200203.pdf]
 
|}
 
|}

Revision as of 17:21, 10 August 2020

ICP#2: 0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec
Date Sample# Etch Rate (nm/min) Etch Selectivity (SiO2/PR) Averaged Sidewall Angle (o) SEM Images
10/5/2018 SiO2#02 160 1.2 82.1 [1]
1/28/2019 I21901 146 1.23 [2]
3/6/2019 I21904 151 1.23 85.6 [3]
7/18/2019 I21905 162 1.37 [4]
1/16/2020 I22001 149 1.21 [5]
8/9/2020 I22002 102 0.86 air leaking to CHF3 channel [6]