Difference between revisions of "Test Data of Etching SiO2 with CHF3/CF4-Florine ICP Etcher"

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Revision as of 18:29, 2 February 2021

Florine ICP: 3.8mT, 50/800W, CHF3/CF4=10/30sccm, time=90 sec
Date Sample# Etch Rate (nm/min) Etch Selectivity (SiO2/PR) Averaged Sidewall Angle (o) SEM Images
1/28/2021 FE2102 309 0.99 [1]