Difference between revisions of "Sputtering Recipes"

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== Fe and Co Deposition (Sputter 3) ==
  
== Fe and Co Deposition (Sputter 3) ==
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*[[media:Fe_and_Co_Films_using_Sputter-3.pdf|Fe and Co Deposition Recipe]]
 +
*[[media:Fe and Co Films using Sputter-3.pdf|Fe and Co Deposition Recipe]]
   
 
== Mo Deposition (Sputter 3) ==
  
== Mo Deposition (Sputter 3) ==
−
*[[media:46-Mo_Film_using_Sputter3.pdf|Mo Deposition Recipe]]
 +
*[[media:46-Mo Film using Sputter3.pdf|Mo Deposition Recipe]]
   
 
== Ni and Ta Deposition (Sputter 3) ==
  
== Ni and Ta Deposition (Sputter 3) ==
−
*[[media:24-Ni_and_Ta_Films_using_Sputter-3.pdf|Ni and Ta Deposition Recipe]]
 +
*[[media:24-Ni and Ta Films using Sputter-3.pdf|Ni and Ta Deposition Recipe]]
−
*[[media:Ni_Sputtering_Film_using_Sputter_3-a.pdf|Ni Sputtering Film Recipe-3mT-200W]]
 +
*[[media:Ni Sputtering Film using Sputter 3-a.pdf|Ni Sputtering Film Recipe-3mT-200W]]
   
 
== SiO2 Deposition (Sputter 3) ==
  
== SiO2 Deposition (Sputter 3) ==
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== Ti Deposition (Sputter 3) ==
  
== Ti Deposition (Sputter 3) ==
−
*[[media:Ti_Sputtering_Film_using_Sputter_3.pdf|Ti Sputtering Film Recipe-3mT-100W]]
 +
*[[media:Ti Sputtering Film using Sputter 3.pdf|Ti Sputtering Film Recipe-3mT-100W]]
   
 
=[[Sputter 4 (AJA ATC 2200-V)]]=
  
=[[Sputter 4 (AJA ATC 2200-V)]]=
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== TiO<sub>2</sub> Deposition (Sputter 4) ==
  
== TiO<sub>2</sub> Deposition (Sputter 4) ==
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*[[media:TiO2_film_using_Sputter4.pdf|TiO<sub>2</sub> Film's Refractive Index Spectrum, Resistivity, AFM Roughness]]
 +
*[[media:TiO2 film using Sputter4.pdf|TiO<sub>2</sub> Film's Refractive Index Spectrum, Resistivity, AFM Roughness]]
   
 
== Au Deposition (Sputter 4) ==
  
== Au Deposition (Sputter 4) ==
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** C = 0.01309
  
** C = 0.01309
 
*Absorbing < ~350nm
  
*Absorbing < ~350nm
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  +
== Al2O3 deposition (IBD) ==
  +
* [https://docs.google.com/spreadsheets/d/14ko5HCZscOncxPpKi1ceREFa-Y1VKqnBN_o3j6izXTM/edit#gid=1868267914 Al2O3 Data 2017]

Revision as of 15:06, 5 December 2017

Back to Vacuum Deposition Recipes. R

Sputter 2 (SFI Endeavor)

Al Deposition (Sputter 2)

AlNx Deposition (Sputter 2)

Au Deposition (Sputter 2)

TiO2 Deposition (Sputter 2)

Sputter 3 (AJA ATC 2000-F)

The recipes below are given as starting points from data obtained in the nanofab. For critical depositions, calibrations are recommended.

Material P(mT) Pow(W) Sub(W) T(C) Ar N2 O2 Height-Tilt Rate(nm/min) Stress(MPa) Rs(uOhm-cm) n@633nm k@633nm Data Below Comment
Si 8 250 0 25 25 0 0 15-3 1.4 - - - - no Gerhard - ramp 2W/s - 3% Unif 4" wafer
SiO2 3 200 10 20 25 0 3 25-9 3.68 - - 1.447 - yes Brian
SiO2 3 250 10 20 25 0 2.5 25-9 4.3 - - 1.485 - yes Brian
SiO2 3 200 10 20 25 0 5 45-3 2.60 - - 1.471 - yes Brian
SiN 3 200 10 20 25 3 0 25-9 1.56 - - 1.992 - yes Brian
SiN 3 250 10 20 25 2.5 0 25-9 2.1 - - 2.06 - yes Brian
Co 10(5) 200 0 20 25 0 0 25-9 2.3 - - - - yes Alex K
Cr 5 200 0 20 25 0 0 44-4 6.84 - - - - no Brian
Cu 1.5 50(395v) 0 20 25 0 0 25-9 4.15 - - - - no Ning
Fe 10(5) 200 0 20 25 0 0 25-9 1.25 - - - - No Alex K
Mo 3 200 0 20 25 0 0 44-4 13.15 - - - - yes Ning
Ni 5 150 0 20 25 0 0 44-4 5.23 - - - - yes Ning
Ni 5 150 0 20 25 0 0 25-9 1.82 - - - - yes Ning
Ni 5 75 0 20 25 0 0 44-4 2.50 - - - - yes Ning
Ni 3 200 0 20 25 0 0 44-4 9.4 - - - - yes Ning
Ni 1.5 50(399v) 0 20 25 0 0 25-9 0.96 - - - - no Ning
Pt 3 50 0 20 25 0 0 25-9 4.1 - - - - no Ning
Ta 5 150 0 20 25 0 0 44-4 9.47 - - - - yes Ning
Ta 5 75 0 20 25 0 0 44-4 5.03 - - - - yes Ning
Ti 3 100 0 20 25 0 0 25-9 1.34 - - - - yes Ning
SampleClean-NativeSiO2 10 0 18 20 25 0 0 44-4 - - - - - yes 150Volts 5 min

Fe and Co Deposition (Sputter 3)

Mo Deposition (Sputter 3)

Ni and Ta Deposition (Sputter 3)

SiO2 Deposition (Sputter 3)

SiN Deposition (Sputter 3)

Ti Deposition (Sputter 3)

Sputter 4 (AJA ATC 2200-V)

The recipes below are given as starting points from data obtained in the nanofab. For critical depositions, calibrations are recommended.

Material P(mT) Pow(W) Sub(W) T(C) Ar N2 O2 Height-Tilt Rate(nm/min) Stress(MPa) Rs(uOhm-cm) n@633nm k@633nm Data Below Comment
W 3 300 0 50 45 0 0 H2.75-T5 11.5 -150 to 150 11 - - Yes Jeremy Watcher
TiW 4.5 200 0 20 45 0 0 H1-T10 4.7 - - - - Yes Ning Cao
TiW 4.5 300 0 75 45 0 0 H2.75-T5 9.5 -150 to 150 60 - - Yes 10%Ti by Wt
TiN 3 150 110V 20 48.25 1.75 0 H2.5-T5 2 - 60 - - No
TiO2 3 250(RF:450V) 0 20 45 0 3 H2.75-T5 4.3 - - - Yes Ning Cao
Nb 4 250 0 20 30 0 0 H2.00-T7 7.5 - - - - No
Ti 10 200 0 20 45 0 0 H2.75-T5 2.3 - - - - Yes Ning Cao
Au 5 200 0 20 45 0 0 H1-T10 17.7 - - - - Yes Ning Cao
Au 10 300 0 20 45 0 0 H2.75-T5 45.4 - - - - Yes Ning Cao
Al 5 200 0 20 45 0 0 H2.75-T5 4.4 - - - - Yes Ning Cao
Pt 5 200 0 20 45 0 0 H2.75-T5 7.4 - - - - Yes Ning Cao
Pt 3 50(439V) 0 20 45 0 0 H2.75-T5 3.9 - - - - Yes Ning Cao

W-TiW Deposition (Sputter 4)

Ti-Au Deposition (Sputter 4)

Pt Deposition (Sputter 4)

TiW Deposition (Sputter 4)

TiO2 Deposition (Sputter 4)

Au Deposition (Sputter 4)

Al Deposition (Sputter 4)

Sputter 5 (Lesker AXXIS)

NOTE: This tool has been replaced by a third AJA Sputter tool, nearly identical to Sputter #4 except that magnetic materials are allowed.  Website updates pending. 
-- 2017-11-02

The recipes below are given as starting points from data obtained in the nanofab. For critical depositions, calibrations are recommended.

Material P(mT) Pow(W) Sub(V) T(C) Ar N2 O2 Height-Tilt Rate(nm/min) Stress(MPa) Rs(uOhm-cm) Rq(nm) n@633nm k@633nm LPDb/LPDa Data Below Comment
SiO2 3 250 120 20 45 0 2 H1.0-T10 2.32 - - 1.49 - 153/6384 No Biljana
SiO2 3 250 120 20 45 0 4.5 H1.0-T10 2.29 -515 - 0.210 1.49 138/4445 No ( AFM available) Biljana
SiO2 3 250 120 20 45 0 6 H1.0-T10 2.32 - - 1.49 - 27/1515 Yes Biljana
  • LPD-light particle detection
  • LPDb- light particle detection before deposition
  • LPDa- light particle detection after deposition

SiO2 Deposition (Sputter 5)

Ion Beam Deposition (Veeco NEXUS)

All users are required to enter their calibration deps (simple test deps only)

SiO2 deposition (IBD)


  • SiO2 1hr depositions:
  • Dep.rate: ≈ 5.2 nm/min (users must calibrate this prior to critical deps)
  • HF e.r.~350 nm/min
  • Stress ≈ -390MPa (compressive)
  • Refractive Index: ≈ 1.494
  • [Cauchy Parameters] (350-2000nm):
    • A = 1.480
    • B = 0.00498
    • C = -3.2606e-5

Ta2O5 deposition (IBD)


  • Ta2O5 1hr depositions:
  • Deposition Rate: ≈ 7.8 nm/min (users must calibrate this prior to critical deps)
  • HF e.r.~2 nm/min
  • Stress ≈ -232MPa (compressive)
  • Refractive Index: ≈ 2.172
  • [Cauchy Parameters] (350-2000nm):
    • A = 2.1123
    • B = 0.018901
    • C = -0.016222

Si3N4 deposition (IBD)

  • Deposition Rate: ≈ 4.10 nm/min (users must calibrate this prior to critical deps)
  • HF e.r.~11nm/min
  • Stress ≈ -1590MPa (compressive)
  • Refractive Index: ≈ 1.969
  • [Cauchy Parameters] (350-2000nm):
    • A = 2.000
    • B = 0.01974
    • C = 1.2478e-4

TiO2 deposition (IBD)

  • Deposition Rate: ≈ 1.29 nm/min (users must calibrate this prior to critical deps)
  • HF etch rate ~5.34nm/min
  • Stress ≈ -445MPa (compressive)
  • Refractive Index: ≈ 2.259
  • [Cauchy Parameters] (350-2000nm):
    • A = 2.435
    • B = -4.9045e-4
    • C = 0.01309
  • Absorbing < ~350nm

Al2O3 deposition (IBD)

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