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  • ICP Etch 2 (Panasonic E640)
    #REDIRECT [[ICP Etch 2 (Panasonic E626I)]]
    42 bytes (6 words) - 15:19, 7 February 2024
  • Test Data of etching SiO2 with CHF3/CF4/O2
    | colspan="5" |ICP#2: 0.5Pa, 50/500W, CHF3/CF4/O2=35/5/10sccm, time=210 sec |Etch Rate (nm/min)
    293 bytes (39 words) - 16:17, 8 October 2018
  • Tony Bosch
    *[[ICP-PECVD (Unaxis VLR)]] *[[ICP-Etch (Unaxis VLR)]]
    851 bytes (98 words) - 09:53, 28 October 2021
  • ICP-Etch (Unaxis VLR)
    |type = Dry Etch ...ching of high Indium containing compound semiconductors such as InP, where etch product volatility is an issue. High aspect ratio, smooth vertical wall, In
    2 KB (313 words) - 16:31, 29 September 2022
  • Dry Etching Recipes
    ! colspan="6" |'''[[ICP Etching Recipes|ICP Etching]]''' | bgcolor="#daf1ff" |[[RIE_Etching_Recipes#RIE_2_.28MRC.29|RIE 2<br> <span style="font-size: 88%;">(MRC)</span>]]
    14 KB (1,875 words) - 15:31, 7 February 2024
  • ICP Etch 2 (Panasonic E626I)
    |type = Dry Etch |location=Bay 2
    3 KB (452 words) - 15:19, 7 February 2024
  • Test Data of etching SiO2 with CHF3/CF4/O2 (using this recipe only for Fluorine etch of the underneath layer)
    | colspan="5" |ICP#2: 0.5Pa, 50/500W, CHF3/CF4/O2=35/5/10sccm, time=210 sec |Etch Rate (nm/min)
    707 bytes (100 words) - 18:26, 6 April 2020
  • Process Group - Process Control Data
    ...d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=0 PECVD#1: SiO<sub>2</sub>] ==[[PECVD Recipes#PECVD 2 .28Advanced Vacuum.29|PECVD #2 (Advanced Vacuum)]]==
    10 KB (1,497 words) - 12:03, 24 April 2024
  • Oxford Etcher - Sample Size Effect on Etch Rate
    ==Sample Size Effect on Etch Rate (Oxford ICP Etcher)== ...affect the etch profile - ie. '''etches are still smooth and vertical, but etch rate varies with sample area.'''
    2 KB (256 words) - 16:05, 20 March 2023
  • ICP Etch 1 (Panasonic E646V)
    |type = Dry Etch |location=Bay 2
    4 KB (697 words) - 15:18, 7 February 2024
  • Test Data of Etching SiO2 with CHF3/CF4-Fluorine ICP Etcher
    | colspan="7" |Fluorine ICP: 3.8mT, 50/'''900W''', CHF3/CF4=10/30sccm, time='''90 sec''' |Etch Rate (nm/min)
    5 KB (758 words) - 15:03, 9 January 2023
  • ICP-PECVD (Unaxis VLR)
    |description = High Density ICP PECVD ...ide is characterized. Processes are available for Gap-filling with SiO<sub>2</sub>.
    3 KB (454 words) - 10:35, 23 May 2023
  • Test Data of etching SiO2 with CHF3/CF4-ICP1
    |+'''ICP#1 Recipe:''' |'''Etch Rate (nm/min)'''
    7 KB (936 words) - 09:54, 12 January 2023
  • NanoFab Process Group
    ...Indium Phosphide Etch Verification procedure|Unaxis PM1: Indium Phosphide Etch Verification Procedure]] *[[ProcessGroup: ICP|ICP#1/2: SiO2 Etch Verification Procedure]]
    2 KB (297 words) - 16:46, 11 September 2023
  • Lee Sawyer
    * [[ICP Etch 1 (Panasonic E626I)]] * [[RIE 2 (MRC)]]
    716 bytes (86 words) - 09:59, 28 October 2021
  • Oxford ICP Etcher (PlasmaPro 100 Cobra)
    |type = Dry Etch |location=Bay 2
    4 KB (532 words) - 23:33, 4 May 2023
  • Unaxis VLR Etch - Process Control Data
    ==Data - InP Ridge Etch (Unaxis VLR)== ...00)|Stepper #2 (AutoStep 200)]] & [[ICP Etch 1 (Panasonic E626I)|Panasonic ICP #1]]
    5 KB (717 words) - 18:41, 21 November 2022
  • Oxford ICP Etcher - Process Control Data
    ==Process Control Data - InP Ridge Etch (Oxford ICP Etcher)== ...00)|Stepper #2 (AutoStep 200)]] & [[ICP Etch 1 (Panasonic E626I)|Panasonic ICP #1]]
    8 KB (1,214 words) - 15:38, 12 January 2023
  • Intellemetrics Laser Etch Monitor Procedure for Panasonic ICP Etchers
    ...cedure for performing an etch with laser monitor endpoint on the Panasonic ICP etchers.'' ## The locations on ICP#1 and ICP#2 are different.
    6 KB (876 words) - 14:23, 13 June 2019
  • Fluorine ICP Etcher (PlasmaTherm/SLR Fluorine ICP)
    |type = Dry Etch |location=Bay 2
    4 KB (603 words) - 13:09, 22 November 2023
  • Test Data of etching SiO2 with CHF3/CF4
    | colspan="5" |'''ICP#2''': 0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec !Etch Rate (nm/min)
    7 KB (976 words) - 13:15, 11 January 2023
  • Deposition Data - temporary 2021-12-15
    ==SiO<sub>2</sub> deposition (PECVD #1)== ...eadsheets/d/1uqpg3sirsRbXdTFlxZ6_k3t0ovP0MtpFtICjpH0-prs/edit#gid= SiO<sub>2</sub><nowiki> [PECVD 1] Standard Recipe</nowiki>]
    17 KB (2,624 words) - 00:07, 16 December 2021
  • Laser Etch Monitoring
    {{tool|Laser Etch Monitor (LEP 500) |type = Dry Etch
    8 KB (1,293 words) - 15:09, 6 December 2023
  • Tool List
    *[[Stepper 2 (AutoStep 200)|Stepper 2 (AutoStep 200, i-line)]] *[[Ovens 1, 2 & 3 (Labline)]]
    7 KB (844 words) - 11:52, 1 March 2024
  • Atomic Layer Deposition (Oxford FlexAL)
    |location=Bay 2 ...and Hydrogen are available for plasma assisted oxides and nitrides. Remote ICP plasma powers up to 600W are possible.
    3 KB (377 words) - 14:56, 8 March 2023
  • Oxygen Plasma System Recipes
    Gas is CF<sub>4</sub> / O<sub>2</sub> (88%/12%) *Etch Rate ≈ 50-100 nm/min. Varies.
    6 KB (887 words) - 13:55, 1 March 2024
  • DSEIII (PlasmaTherm/Deep Silicon Etcher)
    |type= Dry Etch |location=Bay 2
    5 KB (770 words) - 15:17, 15 February 2024
  • ICP Etching Recipes
    ...exposed areas. To prevent a wafer from falling into the machine after the etch, you can [[Packaging Recipes#Wafer Bonder .28Logitech WBS7.29|mount to a ca ==High Rate Bosch Etch (DSEIII)==
    28 KB (4,356 words) - 12:49, 7 May 2024
  • Old Deposition Data - 2021-12-15
    ==SiO<sub>2</sub> deposition (PECVD #1)== ...BU1s4JQo2dEw0bjFEdTF2SUhRa25Ca0d0SzBha3c&usp=drive_web#gid=sharing SiO<sub>2</sub> 100nm Data 2014]
    31 KB (4,516 words) - 00:18, 16 December 2021
  • Sputtering Recipes
    |Co||10(5)||200||0||20||25||0||0||25-9||2.3||-||-||-||- |Ni||5||75||0||20||25||0||0||44-4||2.50||-||-||-||-
    16 KB (2,290 words) - 21:36, 21 September 2023
  • Stepper Recipes
    Stepper 1 and Stepper 2 are i-line systems with good piece handling capabilities. &nbsp;Stepper 3 i ...s. &nbsp; Post develop bakes (not listed) are used to make the resist more etch resistant and depend on subsequent processes. Care should be taken with pos
    17 KB (2,294 words) - 17:03, 21 March 2024
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