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• Test Data of etching SiO2 with CHF3/CF4
  | colspan="5" |'''ICP#2''': 0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec !Etch Rate (nm/min)
  7 KB (976 words) - 13:15, 11 January 2023
• Deposition Data - temporary 2021-12-15
  ==SiO₂ deposition (PECVD #1)== ...eadsheets/d/1uqpg3sirsRbXdTFlxZ6_k3t0ovP0MtpFtICjpH0-prs/edit#gid= SiO₂<nowiki> [PECVD 1] Standard Recipe</nowiki>]
  17 KB (2,624 words) - 00:07, 16 December 2021
• Laser Etch Monitoring
  {{tool|Laser Etch Monitor (LEP 500) |type = Dry Etch
  8 KB (1,293 words) - 15:09, 6 December 2023
• Tool List
  *[[Stepper 2 (AutoStep 200)|Stepper 2 (AutoStep 200, i-line)]] *[[Ovens 1, 2 & 3 (Labline)]]
  7 KB (844 words) - 11:52, 1 March 2024
• Atomic Layer Deposition (Oxford FlexAL)
  |location=Bay 2 ...and Hydrogen are available for plasma assisted oxides and nitrides. Remote ICP plasma powers up to 600W are possible.
  3 KB (377 words) - 14:56, 8 March 2023
• Oxygen Plasma System Recipes
  Gas is CF₄ / O₂ (88%/12%) *Etch Rate ≈ 50-100 nm/min. Varies.
  6 KB (887 words) - 13:55, 1 March 2024
• DSEIII (PlasmaTherm/Deep Silicon Etcher)
  |type= Dry Etch |location=Bay 2
  5 KB (770 words) - 15:17, 15 February 2024
• ICP Etching Recipes
  ...exposed areas. To prevent a wafer from falling into the machine after the etch, you can [[Packaging Recipes#Wafer Bonder .28Logitech WBS7.29|mount to a ca ==High Rate Bosch Etch (DSEIII)==
  28 KB (4,356 words) - 12:49, 7 May 2024
• Old Deposition Data - 2021-12-15
  ==SiO₂ deposition (PECVD #1)== ...BU1s4JQo2dEw0bjFEdTF2SUhRa25Ca0d0SzBha3c&usp=drive_web#gid=sharing SiO₂ 100nm Data 2014]
  31 KB (4,516 words) - 00:18, 16 December 2021
• Sputtering Recipes
  |Co||10(5)||200||0||20||25||0||0||25-9||2.3||-||-||-||- |Ni||5||75||0||20||25||0||0||44-4||2.50||-||-||-||-
  16 KB (2,290 words) - 21:36, 21 September 2023
• Stepper Recipes
  Stepper 1 and Stepper 2 are i-line systems with good piece handling capabilities. &nbsp;Stepper 3 i ...s. &nbsp; Post develop bakes (not listed) are used to make the resist more etch resistant and depend on subsequent processes. Care should be taken with pos
  17 KB (2,294 words) - 17:03, 21 March 2024

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