Search results
Jump to navigation
Jump to search
- {{tool|Laser Etch Monitor (LEP 500) |type = Dry Etch8 KB (1,293 words) - 15:09, 6 December 2023
- =[[PECVD 1 (PlasmaTherm 790)]]= ...s/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=1270764394 PECVD 1 Plots] - SiO2, SiN and Particulate Count===17 KB (2,624 words) - 00:07, 16 December 2021
- ...and Hydrogen are available for plasma assisted oxides and nitrides. Remote ICP plasma powers up to 600W are possible. *Chamber #1: ALD: Al2O3, SiO2, Ru, Pt, Al:ZnO3 KB (377 words) - 14:56, 8 March 2023
- *[[SEM 1 (JEOL IT800SHL)|E-Beam Lithography (Nabity v9)]] *[[Stepper 1 (GCA 6300)|Stepper 1 (GCA 6300, i-line)]]7 KB (844 words) - 11:52, 1 March 2024
- |type= Dry Etch ...ries system with a loadlock. The system has an Inductively Coupled Plasma (ICP) coil and a capactively coupled substrate HF (13.56MHz) and LF (100kHz) sup5 KB (770 words) - 15:17, 15 February 2024
- ...exposed areas. To prevent a wafer from falling into the machine after the etch, you can [[Packaging Recipes#Wafer Bonder .28Logitech WBS7.29|mount to a ca ==High Rate Bosch Etch (DSEIII)==28 KB (4,356 words) - 12:49, 7 May 2024
- =[[PECVD 1 (PlasmaTherm 790)]]= ...hZYI-u4XH69Hnbe3jkm1qKmrR8Rg/edit#gid=sharing Particulates(Gain4) in PECVD#1-OLD DATA 2015]31 KB (4,516 words) - 00:18, 16 December 2021
- *Etch Rate ≈ 50-100 nm/min. Varies. ~1-5min to remove polymerized photoresist/scum after dry etching6 KB (887 words) - 13:55, 1 March 2024
- Stepper 1 and Stepper 2 are i-line systems with good piece handling capabilities. &nb ...s. Post develop bakes (not listed) are used to make the resist more etch resistant and depend on subsequent processes. Care should be taken with pos17 KB (2,294 words) - 17:03, 21 March 2024
- |1.5 |1.52"-4mm16 KB (2,290 words) - 21:36, 21 September 2023