Difference between revisions of "SEM 1 (JEOL IT800SHL)"

From UCSB Nanofab Wiki
Jump to navigation Jump to search
 
(4 intermediate revisions by 2 users not shown)
Line 15: Line 15:
 
===Capabilities===
  
===Capabilities===
 
The system has multiple detectors, detailed below.
  
The system has multiple detectors, detailed below.
−
Low-vacuum mode reduces sample charging by introducing N2 gas into the chamber, without sacrificing imaging quality (using a special vacuum nozzle on the electron column). Our system is equipped with a gentle-beam mode of operation where bias is put on the stage, allowing for high resolution imaging at low electron energies impinging the surface. Both of these are useful for imaging low conductivity and insulating materials without the need for conductive layer coatings.
+
Low-vacuum mode reduces sample charging by introducing N2 gas into the chamber, without sacrificing imaging quality (using a special vacuum nozzle on the electron column). Both of these are useful for imaging low conductivity and insulating materials without the need for conductive layer coatings.
   
−
The system can accept a 6” wafer, but only XYZXYZ mm of the wafer is accessible with the stage movement.
+
The system can accept a 6” wafer, but only 140mm (X) and 80mm (Y) of the wafer is accessible with the stage movement.
   
 
The [[SEM Sample Coater (Hummer)|'''<u>Hummer coater</u>''']] is used to deposit a thin AuPd on your samples, to reduce electrical charging of insulating samples (such as SiO2 substrates, or thick >1µm layers of SiO2 or PR).
  
The [[SEM Sample Coater (Hummer)|'''<u>Hummer coater</u>''']] is used to deposit a thin AuPd on your samples, to reduce electrical charging of insulating samples (such as SiO2 substrates, or thick >1µm layers of SiO2 or PR).
  +
  +
This SEM also has an Electron-Beam Lithography Nabity system. Contact Aidan Hopkins for info.
   
 
==Detailed Specifications==
  
==Detailed Specifications==
Line 27: Line 29:
   
 
*Resolution:
  
*Resolution:
−
**1nm guaranteed at 15kV SEM mode
 +
**0.5nm at 15kV SHL mode
−
**2.5nm at 1kV in SEM mode
 +
**0.7nm at 1kV
−
**1.5nm at 1kV in GB mode
 +
**0.9nm at 500V
 
*Magnification:
 
*Magnification:
−
**SEM: x100 (at WD 25mm) to x1,000,000 (at WD 8mm)
 +
**Photo magnification: x10 to x2,000,000 (128mm x 96mm)
−
**Low-Mag LM mode: x25 to x19,000
 +
**Display magnification: x27 to x5,480,000 (1280pix x 960pix)
−
*Imaging Modes/Detectors:
 +
*Imaging Modes:
  +
**STD: Standard
⚫
**SEI: secondary electron imaging
  
  +
**LDF: Large depth of focus
−
**LM: Low-magnification mode
  
−
**GB: Gentle-Beam mode
 +
**BD: Beam deceleration
 
***Applies negative voltage to sample stage to increase effective acceleration without increasing beam acceleration (reducing charging).
  
***Applies negative voltage to sample stage to increase effective acceleration without increasing beam acceleration (reducing charging).
  +
**SHL: Super hybrid lens
−
**LABE: Low-Angle Backscatter Electron detector
  
  +
*Detectors
  +
**SED: Secondary electron detector (low angle)
  +
**UHD: Ultra high resolution detector
  +
**SBED: Scintillated back scatter electron detector
 
***Inserts between the objective lens and the sample
  
***Inserts between the objective lens and the sample
  +
**LVBED: Low vacuum back scatter electron detector
−
***Strong contrast between materials
  
  ⚫
**LVSED: Low vacuum secondary electron detector
−
**LEI: Lower Electron Detector
  
−
***Detector is lower on chamber, creating strong topographical contrast.
  
 
*Accelerating Voltages:
  
*Accelerating Voltages:
−
**SEM: 0.5 to 30kV
 +
**SEM: 0.01 to 30kV
  +
*Probe currents
⚫
**GB: 0.1 to 4.0kV
  
  +
**A few pA to 500nA (30kV) 100nA (5kV)
−
*Beam Currents: 10<sup>-13</sup> to 2x10<sup>-7</sup> A
  
  ⚫
*Specimen stage
−  
  +
**X: 140mm Y: 80mm
−
===Mechanical===
  
  ⚫
**Z: 6mm to 41mm
−  
  ⚫
**Tilt: -5 to 70 degrees (depending on sample holder and offset)
−
*Max Sample Size: 6-inch wafer
  
  ⚫
**Rotation: 360 degrees
−
*Stage movement:
 
−
**max: 70 x 50mm
  
−
**4-inch wafer: limited to ~25x25mm movement area from wafer center.
  
⚫
*Tilt: -5° to varies. Tilt is dependent on sample holder, stage height, and offset value.
 
⚫
*Rotation: 360°
  
⚫
*Specimen holders :
  
−
**Copper and XYZ Carbon tape available
  
−
**4-inch wafer with topside clips
  
−
**1-inch holder for 30°/90°, 45°/90° mounting with tape or clips.
  
   
 
==Operating Procedures==
  
==Operating Procedures==
   
 
*J[https://wiki.nanofab.ucsb.edu/w/images/1/10/JEOL_IT800SHL_Operating_Procedure.docx EOL IT800SHL Operating Procedure].
  
*J[https://wiki.nanofab.ucsb.edu/w/images/1/10/JEOL_IT800SHL_Operating_Procedure.docx EOL IT800SHL Operating Procedure].
  +
*[https://www.youtube.com/watch?v=YeukVt1Fyi0 Optimizing Astigmatism (CalTech Nanoscience Institute)]
  +
**Stig is the most common cause of blurry images.
  +
**A Common mistake is to optimize stig on flat lines (eg. a cleaved edge or line/space features). This always leads to accidentally skewing the stig in the direction of the lines. Instead, make sure to optimize on a roundish feature, such as a piece of dust/debris.

Latest revision as of 13:01, 16 May 2024

SEM 1 (JEOL IT800SHL)
SEM1 JEOL IT800HSL.jpg
Location Bay 1
Tool Type Inspection, Test and Characterization
Manufacturer JEOL USA Inc
Description JEOL 7600F FESEM
Primary Supervisor Aidan Hopkins
(805) 893-2343
hopkins@ece.ucsb.edu

Secondary Supervisor

Bill Mitchell

Recipes N/A


About

The JEOL IT800HSL Field Emission Scanning Electron Microscope is used for imaging a variety of samples made in the facility.

Capabilities

The system has multiple detectors, detailed below. Low-vacuum mode reduces sample charging by introducing N2 gas into the chamber, without sacrificing imaging quality (using a special vacuum nozzle on the electron column). Both of these are useful for imaging low conductivity and insulating materials without the need for conductive layer coatings.

The system can accept a 6” wafer, but only 140mm (X) and 80mm (Y) of the wafer is accessible with the stage movement.

The Hummer coater is used to deposit a thin AuPd on your samples, to reduce electrical charging of insulating samples (such as SiO2 substrates, or thick >1µm layers of SiO2 or PR).

This SEM also has an Electron-Beam Lithography Nabity system. Contact Aidan Hopkins for info.

Detailed Specifications

Imaging

  • Resolution:
    • 0.5nm at 15kV SHL mode
    • 0.7nm at 1kV
    • 0.9nm at 500V
  • Magnification:
    • Photo magnification: x10 to x2,000,000 (128mm x 96mm)
    • Display magnification: x27 to x5,480,000 (1280pix x 960pix)
  • Imaging Modes:
    • STD: Standard
    • LDF: Large depth of focus
    • BD: Beam deceleration
      • Applies negative voltage to sample stage to increase effective acceleration without increasing beam acceleration (reducing charging).
    • SHL: Super hybrid lens
  • Detectors
    • SED: Secondary electron detector (low angle)
    • UHD: Ultra high resolution detector
    • SBED: Scintillated back scatter electron detector
      • Inserts between the objective lens and the sample
    • LVBED: Low vacuum back scatter electron detector
    • LVSED: Low vacuum secondary electron detector
  • Accelerating Voltages:
    • SEM: 0.01 to 30kV
  • Probe currents
    • A few pA to 500nA (30kV) 100nA (5kV)
  • Specimen stage
    • X: 140mm Y: 80mm
    • Z: 6mm to 41mm
    • Tilt: -5 to 70 degrees (depending on sample holder and offset)
    • Rotation: 360 degrees

Operating Procedures

Retrieved from "https://wiki.nanofab.ucsb.edu/w/index.php?title=SEM_1_(JEOL_IT800SHL)&oldid=161988"