Difference between revisions of "Plasma Activation (EVG 810)"

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(link to recipes page, not yet fixed Tool info link)
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{{tool|{{PAGENAME}}
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{{tool2|{{PAGENAME}}
 
|picture=EVG.jpg
 
|picture=EVG.jpg
 
|type = Dry Etch
 
|type = Dry Etch
 
|super= Lee Sawyer
 
|super= Lee Sawyer
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|super2= Aidan Hopkins
 
|phone= 805-893-2123
 
|phone= 805-893-2123
 
|location=Bay 7
 
|location=Bay 7
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*Gases used: O<sub>2</sub> and N<sub>2</sub>
 
*Gases used: O<sub>2</sub> and N<sub>2</sub>
 
*Sample size: pieces to 6” wafer
 
*Sample size: pieces to 6” wafer
*Max power: 200W
 
 
*Recipes characterized for substrate thicknesses between 250um and 750um.  Thicknesses outside of this range need to have parameters optimized to minimize reflective power.
 
*Recipes characterized for substrate thicknesses between 250um and 750um.  Thicknesses outside of this range need to have parameters optimized to minimize reflective power.
  
 
==Documentation==
 
==Documentation==
  
*[https://signupmonkey.ece.ucsb.edu/wiki/images/3/35/EVG_Plasma_Activation_SOP.pdf Plasma Activation Standard Operating Procedure]
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*[https://wiki.nanotech.ucsb.edu/w/images/c/c0/EVG_Plasma_Activation_SOP_Rev_D.pdf Plasma Activation Standard Operating Procedure]
 +
*[https://wiki.nanotech.ucsb.edu/wiki/images/9/93/EVG_Plasma_Activation_Recipe_Copying.pdf How to copy recipes]
  
== Recipes ==
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==Recipes==
 
Please see the [[Oxygen Plasma System Recipes#Plasma Activation .28EVG 810.29|Oxygen Plasma Recipe]] page for standard EVG recipes.
 
Please see the [[Oxygen Plasma System Recipes#Plasma Activation .28EVG 810.29|Oxygen Plasma Recipe]] page for standard EVG recipes.

Latest revision as of 11:06, 15 September 2022

Plasma Activation (EVG 810)
EVG.jpg
Location Bay 7
Tool Type Dry Etch
Manufacturer EVG Group
Description Plasma Surface Activation

Primary Supervisor Lee Sawyer
(805) 893-2123
lee_sawyer@ucsb.edu

Secondary Supervisor

Aidan Hopkins


Recipes Dry Etch RecipesN/A

SignupMonkey: Sign up for this tool


About

This a capacitively coupled Oxygen plasma activation system used exclusively for the surface activation of clean surfaces prior to wafer bonding. This technique allows bonding temperatures to be lowered and is used as a companion tool to the Karl-Suss SB6 wafer bond tool.

Detailed Specifications

  • Gases used: O2 and N2
  • Sample size: pieces to 6” wafer
  • Recipes characterized for substrate thicknesses between 250um and 750um. Thicknesses outside of this range need to have parameters optimized to minimize reflective power.

Documentation

Recipes

Please see the Oxygen Plasma Recipe page for standard EVG recipes.