Difference between revisions of "PECVD Recipes"

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(renamed Process Control plots for clarity)
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{{recipes|Vacuum Deposition}}
 
{{recipes|Vacuum Deposition}}
 +
 
=[[PECVD 1 (PlasmaTherm 790)]]=
 
=[[PECVD 1 (PlasmaTherm 790)]]=
−
==== Historical Particulate Data ====
 
−
 
−
*[https://docs.google.com/spreadsheets/d/1a0XrY6HuJ6L9niThZYI-u4XH69Hnbe3jkm1qKmrR8Rg/edit#gid=sharing Particulates(Gain4) in PECVD#1-OLD DATA 2015]
 
−
*[https://docs.google.com/spreadsheets/d/1ZfkspbCQZmdThC8qB4XyjsyPAzrMF1QbHSMFmH6xSo4/edit#gid=sharing Particulates(Gain4) in PECVD#1-OLD DATA 2016]
 
−
*[https://docs.google.com/spreadsheets/d/1YNiof68Veeh08s_NtG5aCWUXW7GWDDU00HAimV_l8_g/edit#gid=sharing Particulates(Gain4) in PECVD#1-OLD DATA 2017]
 
−
*[https://docs.google.com/spreadsheets/d/1VN551M2oXGWX306HDLQXvZIp3kgxEvWffQqMqnc8ISk/edit#gid=sharing Particulates in PECVD#1 films 2017]
 
−
*[https://docs.google.com/spreadsheets/d/11c0gQHnattIjVO95aBqiL-zL4DInRFihV-YB54xLT40/edit#gid=sharing Particulates in PECVD#1 films 2018]
 
−
*[https://docs.google.com/spreadsheets/d/1ct-SSCRxf81W0jupCWzh81n0DBwPv6mwKFMzuWu_0TI/edit#gid=sharing Particulates in PECVD#1 films 2019]
 
−
*[https://docs.google.com/spreadsheets/d/1yks0OgH8rpbYjin_Qr8vpPg8jBiZQRs_PKfyfo-Rqg0/edit#gid=sharing Particulates in PECVD#1 films 2020]
 
−
 
−
==SiN deposition (PECVD #1)==
 
  
−
*[https://docs.google.com/spreadsheets/d/1uqpg3sirsRbXdTFlxZ6_k3t0ovP0MtpFtICjpH0-prs/edit?usp= Si3N4 Standard Recipe]
+
===[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=1270764394 PECVD 1 Process Control Plots] - Plots of all process control data===
−
*[https://docs.google.com/spreadsheets/d/10ccfgCf5O0JM6L9J5XDz-gWVQz9P24VU/edit#gid= Si3N4 Recipe parameters]
 
−
==== Historical Data ====
 
−
 
 
−
===== Thin-Film Properties =====
 
−
 
 
−
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEN6LV93LXlnbUhIWU1adVZWMWlXYnc&usp=drive_web#gid=sharing SiN 100nm Data 2014]
 
−
*[https://docs.google.com/spreadsheets/d/1phx1WficlUEg0xSahaAq4zrRk6m9Eb0ausO8wcAmXqs/edit#gid=sharing SiN 100nm Data 2015]
 
−
*[https://docs.google.com/spreadsheets/d/1VNSNTqnbE4SFk0HyhBAy3GJzi0jRQEs8cgk1v2_Uam8/edit#gid=sharing SiN 100nm Data 2016]
 
−
*[https://docs.google.com/spreadsheets/d/1TG1X2wpl2fWaHEtAHtpZFBVSCk1BQeGJQ8LA2M2qBJ0/edit#gid=sharing SiN 100nm Data 2017]
 
−
*[https://docs.google.com/spreadsheets/d/1UlyvPcXUBQ5R2JwjKOjELvtCJaTElVhJHfzgjyaRd2A/edit#gid=sharing SiN 300nm Data 2017]
 
−
*[https://docs.google.com/spreadsheets/d/1pAoTCaNSf0uZMyiQ2qKFd0s_e4e53P9Z1jUwtmTnlLk/edit#gid=sharing SiN 300nm Data 2018]
 
−
*[https://docs.google.com/spreadsheets/d/1Pnw8eEaQ0rGblRYl6LeIm6wrh1hgeyjnHEbA4BzV8JM/edit#gid=sharing SiN 300nm Data 2019]
 
−
*[https://docs.google.com/spreadsheets/d/1N_1Kk6J-wA4nlHpFg5EMDZNHR1kLDo_fr_Dvc6osSr4/edit#gid=sharing SiN 300nm Data 2020]
 
−
 
 
−
===== Uniformity Data =====
 
−
 
 
−
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dElmTXZyOEZsOFdrMVhNLWpKXzVmNWc&usp=sharing SiN 100 nm Thickness uniformity 2014]
 
−
*[https://docs.google.com/spreadsheets/d/1-pET1Eojooso5UHk90W-5uYByDDdrCyRnggqewxTmVg/edit#gid=sharing SiN 100 nm Thickness uniformity 2015]
 
−
*[https://docs.google.com/spreadsheets/d/1V_-KzsdR-2tSnJGtUdQWokmnNIY949t0vdQOp7RfCgc/edit#gid=sharing SiN 100 nm Thickness uniformity 2016]
 
−
*[https://docs.google.com/spreadsheets/d/1tM-a4VBEqpxr2G8PGGLTbsR6BQBmvqXNRBw0mikAUS0/edit#gid=sharing SiN 100 nm Thickness uniformity 2017]
 
−
*[https://docs.google.com/spreadsheets/d/1Z83RCH5cAUfViO6vv6hAatcLVWZ95ex4nDdfffm9I7s/edit#gid=sharing SiN 300nm Thickness uniformity 2017]
 
−
*[https://docs.google.com/spreadsheets/d/1b4EQZdRtVbqNwGBrItoG5-tz6RIzlsvBiCFR6ZXfylw/edit#gid=sharing SiN 300nm Thickness uniformity 2018]
 
−
*[https://docs.google.com/spreadsheets/d/1-OiaH8frAzJzHKfbYTJP808ddzk1Wsv_CixDzG-sSfo/edit#gid=sharing SiN 300nm Thickness uniformity 2019]
 
−
*[https://docs.google.com/spreadsheets/d/1eP6U2WJetu2wDB6wemkMPFG0JYx33I3Z3liihwae8Oo/edit#gid=sharing SiN 300nm Thickness uniformity 2020]
 
  
 
==SiO<sub>2</sub> deposition (PECVD #1)==
 
==SiO<sub>2</sub> deposition (PECVD #1)==
  
−
*[https://docs.google.com/spreadsheets/d/1uqpg3sirsRbXdTFlxZ6_k3t0ovP0MtpFtICjpH0-prs/edit#gid= SiO2 Standard Recipe]
+
*[https://docs.google.com/spreadsheets/d/1uqpg3sirsRbXdTFlxZ6_k3t0ovP0MtpFtICjpH0-prs/edit#gid= SiO<sub>2</sub><nowiki> [PECVD 1] Standard Recipe</nowiki>]
−
*[https://docs.google.com/spreadsheets/d/10ccfgCf5O0JM6L9J5XDz-gWVQz9P24VU/edit#gid= SiO2 Recipe parameters]  
+
*[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=0 SiO<sub>2</sub><nowiki> [PECVD 1] Current Process Control Data</nowiki>]
 +
*[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=1503619544 SiO<sub>2</sub><nowiki> [PECVD 1] Historical Data</nowiki>] - Oct. 2021 and earlier
  
−
==== Historical Data ====
+
==SiN deposition (PECVD #1)==
  
−
===== Thin-Film Properties =====
+
*[https://docs.google.com/spreadsheets/d/1DGU745SeunYz4sLs1LpGKbtOYX-tQyBHEvVYcMxHRKE/edit#gid= Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 1] Standard Recipe</nowiki>]
 +
*[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=98787450 Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 1] Current Process Control Data</nowiki>]
 +
*[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=604790654 Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 1] Historical Data</nowiki>] - Oct. 2021 and earlier
  
−
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEw0bjFEdTF2SUhRa25Ca0d0SzBha3c&usp=drive_web#gid=sharing SiO<sub>2</sub> 100nm Data 2014]
+
==Low Stress Si<sub>3</sub>N<sub>4</sub> (PECVD#1)==
−
*[https://docs.google.com/spreadsheets/d/1JWNUcH8l90xif-0BhYKJee9nXxE4hnvvp6N2NtZLYXY/edit#gid=sharing SiO<sub>2</sub> 100nm Data 2015]
 
−
*[https://docs.google.com/spreadsheets/d/1F2pfsVnbUgaE9tsm8HZMlY6cyt-nhui0IpvGc6udhDU/edit#gid=sharing SiO<sub>2</sub> 100nm Data 2016]
 
−
*[https://docs.google.com/spreadsheets/d/1MblK5Zr5Skfw0s9Hdhqr_cCwN-nCgM-ofZnsAyvVRq8/edit#gid=sharing SiO<sub>2</sub> 100nm Data 2017]
 
−
*[https://docs.google.com/spreadsheets/d/15SocIqWQvBKSvT5oCWoZAURLaaqb9KosxCN2rueZQN8/edit#gid=sharing SiO<sub>2</sub> 300nm Data 2017]
 
−
*[https://docs.google.com/spreadsheets/d/1DdjIRGsfJ7WCrxQoGpmzkjLGJhpBTFNYLFmmHcNjAjk/edit#gid=sharing SiO<sub>2</sub> 300nm Data 2018]
 
−
*[https://docs.google.com/spreadsheets/d/1QbhukSuVNueT067IVEpweSlD4B7GQecf-tfQFQeV6Xs/edit#gid=sharing SiO<sub>2</sub> 300nm Data 2019]
 
−
*[https://docs.google.com/spreadsheets/d/1OwyhfFPDH-XLPczA8cKoBPnujq9oNukaWkHq0KoFS40/edit#gid=sharing SiO<sub>2</sub> 300nm Data 2020]
 
  
−
==== Uniformity Data ====
+
*[https://wiki.nanotech.ucsb.edu/wiki/images/4/4a/New_PECVD1-LS_SIN-Turner05recipe_2014_LS_SIN_recipe.pdf Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 1] Standard Recipe</nowiki>]
 +
*[[To Be Added|Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 1] Current Process Control Data</nowiki>]] ''- To Be Added''
 +
*[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=934830479 Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 1] Historical Data</nowiki>] - 2021-10 and earlier
  
−
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dDQ3VEtZQVRpdVdlbGtIZHpTNmFzNmc&usp=drive_web#gid=sharing SiO<sub>2</sub> 100nm Thickness uniformity 2014]
+
==SiO<sub>x</sub>N<sub>y</sub> deposition (PECVD #1)==
−
*[https://docs.google.com/spreadsheets/d/1NQy-ADou6f2NBU-9jZG8KME1lOz0X5mh6HZV9_jPGes/edit#gid=sharing SiO<sub>2</sub> 100 nm Thickness uniformity 2015]
 
−
*[https://docs.google.com/spreadsheets/d/1WUCm_dWpxKTjfFf1rNfLuxvwMxsyCYON_OZ3gb50L_s/edit#gid=sharing SiO<sub>2</sub> 100 nmThickness uniformity 2016]
 
−
*[https://docs.google.com/spreadsheets/d/1dpC_AkPD-etIH6fVuQqLfd4UMNQCEtcqhvmBpwbEncE/edit#gid=sharing SiO<sub>2</sub> 100nm Thickness uniformity 2017]
 
−
*[https://docs.google.com/spreadsheets/d/1Fa8mZIBIeJwvCwUbJ-28VcvVYj8rshhuDuXsYxA-cD8/edit#gid=sharing SiO<sub>2</sub> 300nm Thickness uniformity 2017]
 
−
*[https://docs.google.com/spreadsheets/d/1YB_9USpuXGpIdSW2gNsptu5nSrLWAGsYu0SWoYEy0aQ/edit#gid=sharing SiO<sub>2</sub> 300nm Thickness uniformity 2018]
 
−
*[https://docs.google.com/spreadsheets/d/1FatUAEegWuDRzVa47L1_cqgRs0AZ_Fao9jpwz5sfln0/edit#gid=sharing SiO<sub>2</sub> 300nm Thickness uniformity 2019]
 
−
*[https://docs.google.com/spreadsheets/d/1uAIEv_z2TJtY2XxTYnDIyKwKT4ZIhalTCyZ5SrDRJmA/edit#gid=sharing SiO<sub>2</sub> 300nm Thickness uniformity 2020]
 
  
−
== Low-Stress SiN - LS-SiN (PECVD#1) ==
+
*[https://wiki.nanotech.ucsb.edu/wiki/images/2/24/New_PECVD1-LS_SION-recipe_2014_LS_SION_recipe.pdf SiO<sub>x</sub>N<sub>y</sub> Standard Recipe]
 +
*[https://docs.google.com/spreadsheets/d/1rixyzAAq6q08M5OwvZiDVoh3K8B566XKM-UZAQIAnsg/edit#gid=sharing SiO<sub>x</sub>N<sub>y</sub> Data 2014] - ''Rate, Index etc.''
 +
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEttR2JSTkRoamR0SUZ4bE5QUW9uS2c&usp=sharing SiO<sub>x</sub>N<sub>y</sub>1000A Thickness uniformity 2014]
  
−
*[//wiki.nanotech.ucsb.edu/wiki/images/4/4a/New_PECVD1-LS_SIN-Turner05recipe_2014_LS_SIN_recipe.pdf LS SiN Standard Recipe]
+
==Standard Cleaning Procedure (PECVD #1)==
−
*[https://docs.google.com/spreadsheets/d/1Joz0az9TGZWQc4CiMQJZzLBbNFbx_hH2Oc0B4NNJmYk/edit#gid=sharing LS SiN Data  2014]
+
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:
−
*[https://docs.google.com/spreadsheets/d/1xIzc2CufRYNSfAtsOXpw3IzHreeu42BWrLBV0kzP6kA/edit#gid=sharing LS SiN 1000A Thickness uniformity 2014]
 
  
−
== SiO<sub>x</sub>N<sub>y</sub> deposition (PECVD #1) ==
+
#Wet cleaning (start cleaning by using a cleanroom wipe sprayed with DI. Wipe chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA. )
 +
#Load the recipe for cleaning "CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding a required time for cleaning.
 +
#
  
−
*[//wiki.nanotech.ucsb.edu/wiki/images/2/24/New_PECVD1-LS_SION-recipe_2014_LS_SION_recipe.pdf SiO<sub>x</sub>N<sub>y</sub> Standard Recipe]
+
{| class="wikitable"
−
*[https://docs.google.com/spreadsheets/d/1rixyzAAq6q08M5OwvZiDVoh3K8B566XKM-UZAQIAnsg/edit#gid=sharing SiO<sub>x</sub>N<sub>y</sub> Data 2014]
+
|+Table of Cleaning Times
−
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEttR2JSTkRoamR0SUZ4bE5QUW9uS2c&usp=sharing SiO<sub>x</sub>N<sub>y</sub>1000A Thickness uniformity 2014]
+
!Film Dep'd
 +
!Cleaning Time
 +
|-
 +
|SiO<sub>2</sub>
 +
|TBD
 +
|-
 +
|Si<sub>3</sub>N<sub>4</sub>
 +
|TBD
 +
|-
 +
|SiOxNy
 +
|Same as XYZ
 +
|}
  
−
== Cleaning Recipes (PECVD #1) ==
+
#
−
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps: 
 
−
# Wet cleaning (start cleaning by using a cleanroom wipe sprayed with DI. Wipe chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA. )
 
−
# Load the recipe for cleaning "CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding a required time for cleaning.
 
  
−
=== [//wiki.nanotech.ucsb.edu/w/images/7/72/PECVD1-cleaning.png Standard Cleaning Recipe: "CF4/O2 Clean"] ===
+
===[https://wiki.nanotech.ucsb.edu/w/images/7/72/PECVD1-cleaning.png Standard Cleaning Recipe (PECVD#1): "CF4/O2 Clean"]===
−
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time.  The recipe is set up so that it will '''pop up a window for the cleaning time upon running the recipe''' - you do not need to edit the recipe before running it.
+
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time.  The recipe is set up so that '''it will pop up a window for the cleaning time''' upon running the recipe - you do not need to edit the recipe before running it.
  
 
=[[PECVD 2 (Advanced Vacuum)]]=
 
=[[PECVD 2 (Advanced Vacuum)]]=
  
−
==== Historical Particulate Data ====
+
===[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=272916741 PECVD 2 Process Control Plots] - Plots of all process control data===
−
 
 
−
*[https://docs.google.com/spreadsheets/d/1kj0SWxRpnPRoGld8k3sW-3yK1iPm3buTkvlJSN5YPV4/edit#gid=sharing Particulates (Gain4) in PECVD#2 2015]
 
−
*[https://docs.google.com/spreadsheets/d/1xpk9tJrE68NIJ_1yIym0xBxd4fnzHHBHdkhFehruO3E/edit#gid=sharing Particulates (Gain4) in PECVD#2 2016]
 
−
*[https://docs.google.com/spreadsheets/d/1ICgt-fgTvNPbE_65x5jUsqy8JjHVv5WUvmE7g7VUbsI/edit#gid=sharing Particulates (Gain4) in PECVD#2 2017]
 
−
 
 
−
*[https://docs.google.com/spreadsheets/d/1yPAPP24z3RcRRi-HqEp3GJN4JM8Ec8SFJwZ-OYGG2HU/edit#gid=sharing Particulates in PECVD#2 films 2017]
 
−
*[https://docs.google.com/spreadsheets/d/1aU6fTyQ5MlGD4uCa9gepG5rLJzW3wlkOWSKEl_w_Ye4/edit#gid=sharing Particulates in PECVD#2 films 2018]
 
−
*[https://docs.google.com/spreadsheets/d/1OPZXe8g3H0wywIrPFel3nSZ5iyPs2mVIYUSVKfTtMDg/edit#gid=sharing Particulates in PECVD#2 films 2019]
 
−
*[https://docs.google.com/spreadsheets/d/1Y9lomsf7bDojeXoAsEG7xvypx_sw_atpmPwB9xtK1Zk/edit#gid=sharing Particulates in PECVD#2 films 2020]
 
  
 
==SiO<sub>2</sub> deposition (PECVD #2)==
 
==SiO<sub>2</sub> deposition (PECVD #2)==
  
−
==== Standard Recipe ====
+
*[https://docs.google.com/spreadsheets/d/1wCEcFj6ZMHR4QifngLXwz6dqbyf8hsVKu7bQbMS6EoA/edit#gid= SiO<sub>2</sub><nowiki> [PECVD 2] Standard Recipe</nowiki>] - "''STD SiO2''"
−
 
+
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=1313651154 SiO<sub>2</sub><nowiki> [PECVD 2] Current Process Control Data</nowiki>]
−
*[https://docs.google.com/spreadsheets/d/1vgWUtpCWC_TFffU9kuR3wqvjryiNA5OV/edit#gid= STD SiO2 Recipe Parameters]
+
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=2024333220 SiO<sub>2</sub><nowiki> [PECVD 2] Historical Data</nowiki>] - Before Oct. 2021
−
*[https://docs.google.com/spreadsheets/d/1wCEcFj6ZMHR4QifngLXwz6dqbyf8hsVKu7bQbMS6EoA/edit#gid= STD SiO2 Recipe]
 
−
 
 
−
==== Historical Data ====
 
−
 
 
−
===== Thin-Film Properties =====
 
−
 
 
−
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dGJZaGtDTVRqa1BRdW5iU1N1Y01jd0E&usp=drive_web#gid=sharing Oxide Data 2014]
 
−
*[https://docs.google.com/spreadsheets/d/1d5boeJRWWgMqvQe6nVM7m8s3KAcS4Yp2L5CEU9svkX4/edit#gid=sharing Oxide Data 2015]
 
−
*[https://docs.google.com/spreadsheets/d/1XQRcTJdw9AIMPAUsH0n9Ic9Fe1_xGDSvAxD4gVc9FBw/edit#gid=sharing Oxide data 2016]
 
−
*[https://docs.google.com/spreadsheets/d/1vcaHwraMGNHuRxgWwGp78EJf4T3Jk182wxoCz_neuck/edit#gid=sharing Oxide Data 2017]
 
−
*[https://docs.google.com/spreadsheets/d/1VI-sUmaqois0NsCvf2kQmPfRRa03MjBzl779hmmLtP4/edit#gid=sharing Oxide Data 2018]
 
−
*[https://docs.google.com/spreadsheets/d/1oWnQ3D6oknKWU2bohvSrN85rlEZgQN3YP_ZJ4i8u7do/edit#gid=sharing Oxide Data 2019]
 
−
*[https://docs.google.com/spreadsheets/d/1Z9UMgaQC2PiLLrMk04mpKWkJLa1L_WFMAm5079eKxI0/edit#gid=sharing Oxide Data 2020]
 
−
 
 
−
 
 
−
===== Uniformity Data =====
 
−
 
 
−
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dDRjSHEtYUZRUTg4azE2U0JGUTg2M1E#gid=sharing Oxide Thickness Uniformity 2014]
 
−
*[https://docs.google.com/spreadsheets/d/16pZHcGwesXB1mMPwntOudBIlPvRh6A6DI37DEwyYfPw/edit#gid=sharing Oxide Thickness Uniformity 2015]
 
−
*[https://docs.google.com/spreadsheets/d/10OEuANVNmHqWvx-92zibechIrHK5kgqSK4B_O_O3-YI/edit#gid=sharing Oxide Thickness Uniformity 2016]
 
−
*[https://docs.google.com/spreadsheets/d/19JjJYdFNFzO685Hp9hODVRFAYF5bP3IEYGTRGQjqLN4/edit#gid=sharing Oxide Thickness Uniformity 2017]
 
−
*[https://docs.google.com/spreadsheets/d/1064j6894X63WlRX3Uolxg1q1FRzUZLqSZQA9BWwzPOk/edit#gid=sharing Oxide Thickness Uniformity 2018]
 
−
*[https://docs.google.com/spreadsheets/d/1064j6894X63WlRX3Uolxg1q1FRzUZLqSZQA9BWwzPOk/edit#gid=sharing Oxide Thickness Uniformity 2019]
 
−
*[https://docs.google.com/spreadsheets/d/1Z9UMgaQC2PiLLrMk04mpKWkJLa1L_WFMAm5079eKxI0/edit#gid=sharing Oxide Thickness Uniformity 2020]
 
  
 
==SiN deposition (PECVD #2)==
 
==SiN deposition (PECVD #2)==
  
−
==== Standard Recipe ====
+
*[https://docs.google.com/spreadsheets/d/1KS4HfhUJyYVep4H6CRAKpMRP5TA31F0qD-obQkKRnEI/edit#gid= Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 2] Standard Recipe</nowiki>] - "''Nitride2''"
 +
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=773875841 Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 2] Current Process Control Data</nowiki>]
 +
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=1153442266 Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 2] Historical Data</nowiki>] - Before Oct. 2021
  
−
*[//wiki.nanotech.ucsb.edu/wiki/images/4/4c/SiNx_Films_by_PECVD2.pdf SiNx Film Stress vs LF and HF Duration Time, and Gas Flowing-rate]
+
==Low-Stress SiN deposition (PECVD #2)==
−
*[https://docs.google.com/spreadsheets/d/1Oegk0aFFCuz9wQHDN2Kdz0NFo9_wuEVW/edit?dls=true#gid= STD Nitride2 Recipe Parameters]
+
''Low-Stress Silicon Nitride, Si<sub>3</sub>N<sub>4</sub> (< ±100 MPa)''
  
−
*[https://docs.google.com/spreadsheets/d/1KS4HfhUJyYVep4H6CRAKpMRP5TA31F0qD-obQkKRnEI/edit#gid= STD Nitride2 Recipe]
+
*[https://docs.google.com/spreadsheets/d/1DzzI7aE61R7c6gyk6cGBdm9FtGrApiNJ4AL90ll2C8k/edit#gid= Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 2] Standard Recipe</nowiki>] - "''LSNitride2''
  
−
==== Historical Data ====
+
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=584923738 Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 2] Current Process Control Data</nowiki>]
 +
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=203400760 Plots of Low-Stress Si<sub>3</sub>N<sub>4</sub> Process Control Data]
 +
*[[To Be Added|Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 2] Historical Data - Before Oct. 2021</nowiki>]]
 +
*:''Old Versions of the recipe:''
 +
*:''[https://wiki.nanotech.ucsb.edu/wiki/images/a/a5/New_AdvPECVD-LS_Nitride2_300C_standard_recipe_LS_Nitride2_standard_recipe.pdf LS Nitride2 Standard Recipe 2014-5/9/2018]''
 +
*:''[https://wiki.nanotech.ucsb.edu/wiki/images/0/01/STD_LSNitride2_5-9-18.pdf STD LSNitride2 5/9/2018]''
  
−
===== Thin-Film Properties =====
+
==Amorphous-Si deposition (PECVD #2)==
  
−
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dDE0R3FlenNPa2txNmRldTczMXZNNnc#gid=sharing Nitride2 Data 2014]
+
*[https://wiki.nanotech.ucsb.edu/wiki/images/9/9d/03-Amorphous-Si-PECVD-2.pdf Amorphous Si Deposition Recipe]
−
*[https://docs.google.com/spreadsheets/d/1SkYqOwgjUyMaFBPhuTjMvBTXu0KdQFNmITryF_OVi8o/edit#gid=sharing Nitride2 Data 2015]
+
*[https://wiki.nanotech.ucsb.edu/wiki/images/0/09/ASi_deposition_and_film_stress_using_AV_dep_tool.pdf Amorphous Si Film Characterization and Stress]
−
*[https://docs.google.com/spreadsheets/d/1HJszgZyEZR9ZsiJpQM6pdsoQ6pWwI6brXasdmfDRoBQ/edit#gid=sharing Nitride2 Data 2016]
 
−
*[https://docs.google.com/spreadsheets/d/1f3JBEnr7lf0yIMlzlOYKv_bXlIDyXt8vec_rSVJIoOk/edit#gid=sharing Nitride2 Data 2017]
 
−
*[https://docs.google.com/spreadsheets/d/1OO0ewGSqYSzL3lj8fXkgckTkBGQRliD6sBc02IW7wZY/edit#gid=sharing Nitride2 Data 2018]
 
−
*[https://docs.google.com/spreadsheets/d/1Zi8CRspd3LTDdNRRCneE0--bVohWvZbV_kSHo04s0oI/edit#gid=sharing Nitride2 Data 2019]
 
−
*[https://docs.google.com/spreadsheets/d/15UAXRIOO_aHvGCyTzV0dSZKdq0TUqPxVxuDlva2B1BI/edit#gid=sharing Nitride2 Data 2020]
 
  
 +
==Standard Cleaning Procedure (PECVD #2)==
 +
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:
  
 +
#(If >29min dep time) Wet cleaning: Start cleaning by using a cleanroom wipe sprayed with DI. Wipe upper chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA & wiping again.
 +
#Load the recipe for cleaning "STD CF<sub>4</sub>/O<sub>2</sub> Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding required time for cleaning.
  
−
===== Uniformity Data =====
+
===[https://wiki.nanotech.ucsb.edu/w/images/3/34/PECVD2_photo_for_cleaning.png Standard Clean Recipe (PECVD#2): "STD CF4/O2 Clean"]===
 +
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time.  The recipe is set up so that it will pop up a window for the cleaning time upon running the recipe - you do not need to edit the recipe before running it.
  
−
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dERkYm85bGtYQVpjVk5GTGJuMkg2anc&usp=drive_web#gid=sharing Nitride2 Thickness Uniformity 2014]
 
−
*[https://docs.google.com/spreadsheets/d/14_dYQu3z31fF_oxsUUX8BmDucgv6B07xB3_zqP0HmvM/edit#gid=sharing Nitride2 Thickness Uniformity 2015]
 
−
*[https://docs.google.com/spreadsheets/d/1qBHs7uALM2OdE-yXOq4uZk6aUQEjZRjG1C6RcMEf0sk/edit#gid=sharing Nitride2 Thickness Uniformity 2016]
 
−
*[https://docs.google.com/spreadsheets/d/1WJcYzHUjLrWpys_i-Q96FN_lBDBufpXZKZVEX_gri_Q/edit#gid=sharing Nitride2 Thickness Uniformity 2017]
 
−
*[https://docs.google.com/spreadsheets/d/1hzj4Fb5fN8lS0m9-rm9AgEn0Zunif5grI4X7YkAMEFU/edit#gid=sharing Nitride2 Thickness Uniformity 2018]
 
−
*[https://docs.google.com/spreadsheets/d/1hzj4Fb5fN8lS0m9-rm9AgEn0Zunif5grI4X7YkAMEFU/edit#gid=sharing Nitride2 Thickness Uniformity 2019]
 
−
*[https://docs.google.com/spreadsheets/d/1xdzjLODpe2Xb7r4PGil1q-OFqSYKuZBivqLt1T6lezw/edit#gid=sharing Nitride2 Thickness Uniformity 2020]
 
  
−
==Low-Stress SiN deposition (PECVD #2)==
+
'''Clean Times (PECVD#2''')
−
''Low-Stress SilIcon Nitride (< 100 MPa)''
+
{| class="wikitable"
 +
!Film Deposited
 +
!Cleaning Time (Dry)
 +
|-
 +
|SiO<sub>2</sub>
 +
|1 min. clean for every 1 min. deposition
 +
|-
 +
|Si<sub>3</sub>N<sub>4</sub>
 +
|1 min. clean for every 7 min of deposition
 +
|-
 +
|If > 29min total dep time
 +
(Season + Dep)
 +
|Wet Clean the Upper Lid/Chamber
 +
DI water then Isopropyl Alcohol on chamber wall & portholes
 +
|}
  
−
==== Standard Recipe ====
+
=[[ICP-PECVD (Unaxis VLR)]]=
 +
2020-02: New recipes have been characterized for low particulate count and repeatability.  Only staff-supplied recipes are allowed in the tool. Please follow the [[ICP-PECVD (Unaxis VLR)#Documentation|new procedures]] to ensure low particle counts in the chamber.
  
−
*[https://docs.google.com/spreadsheets/d/1qXCH1phgvk3-5_5FUqeQaGPERhyS5dn4/edit#gid= STD LS Nitride2 Recipe Parameters]
+
The system currently has '''Deuterated Silane (SiD<sub>4</sub>)''' installed - identical to the regular Silicon precursor SiH<sub>4</sub>, except that it significantly lowers optical absorption in the near-infrared due to shifted molecular vibrations/molecular weights. This gas is more expensive and thus more applicable to optical application than to general-purpose SiN films.
−
*[https://docs.google.com/spreadsheets/d/1DzzI7aE61R7c6gyk6cGBdm9FtGrApiNJ4AL90ll2C8k/edit#gid= STD LS Nitride2 Recipe]
 
−
*''Old Versions:''
 
−
**[//wiki.nanotech.ucsb.edu/wiki/images/a/a5/New_AdvPECVD-LS_Nitride2_300C_standard_recipe_LS_Nitride2_standard_recipe.pdf LS Nitride2 Standard Recipe 2014-5/9/2018]
 
−
**[//wiki.nanotech.ucsb.edu/wiki/images/0/01/STD_LSNitride2_5-9-18.pdf STD LSNitride2 5/9/2018]
 
  
−
==== Historical Data ====
+
===[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=417334948https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=417334948 ICP-PECVD Process Control Plots] - Plots of all Process Control data===
  
−
===== Thin-Film Properties =====
+
==Low Deposition Rate SiO<sub>2</sub> [ICP-PECVD]==
  
−
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEZvWVhzS1pHUXZkOGcyQWZ4LTNBWGc&usp=drive_web#gid=sharing LS Nitride2 Data 2014]
+
*[https://docs.google.com/spreadsheets/d/1wocoCPOOEDQcZbXJJNaZs1sr9dXBZpn1wUyglL8IQrI/edit#gid=1199123007 Low Deposition Rate SiO<sub>2</sub><nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 LDR 250C''"
−
*[https://docs.google.com/spreadsheets/d/16Q6BrPoNiFP0elVoSGwXRfQdHXzAXOgiyqKmEw-4kII/edit#gid=sharing LS Nitride2 Data 2015]
+
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=0 Low Deposition Rate SiO<sub>2</sub><nowiki> [ICP-PECVD] - Current Process Control Data</nowiki>]
−
*[https://docs.google.com/spreadsheets/d/1GZ58eFzD-T8DJ2Nsaj74u6cvawzsOI2DmMit6Z7vqys/edit#gid=sharing LS Nitride2 Data 2016]
+
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1916118198 Low Deposition Rate SiO<sub>2</sub><nowiki> [ICP-PECVD] - Historical Data</nowiki>] - before Oct. 2021
−
*[https://docs.google.com/spreadsheets/d/1gGIWqkCnykPgBc3prhXExT7QcNjWm2HdbTtwugNqm18/edit#gid=sharing LS Nitride2 Data 2017]
 
−
*[https://docs.google.com/spreadsheets/d/1vwpDtiglR2DLWiYNhpBX77cyyj9lw55iVeFz1puN7bM/edit#gid=sharing LS Nitride2 Data 2018]
 
−
*[https://docs.google.com/spreadsheets/d/1zvSl2P5T926Ol48yH3FBCZm1zCeycl3S8GWQYtzi8VI/edit#gid=sharing LS Nitride2 Data 2019]
 
−
*[https://docs.google.com/spreadsheets/d/1muyFsIspqZXB2HXiqG3t39uzeO7A7Srvh4aGdXjwCc4/edit#gid=sharing LS Nitride2 Data 2020]
 
  
−
===== Uniformity Data =====
+
==High Deposition Rate SiO<sub>2</sub> [ICP-PECVD]==
  
−
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dENSak1ZNnVaVTFEQTBzdDJMSDlDTFE&usp=drive_web#gid=1=sharing LS Nitride2 Thickness Uniformity 2014]
+
*[https://docs.google.com/spreadsheets/d/1OxHi5r9ifNvF8ODpIk6aoRevb4RdbbykwPVMm1g-yi4/edit#gid=1199123007 High Deposition Rate SiO<sub>2</sub><nowiki> [ICP-PECVD] Standard Recipe</nowiki>] - "''SiO2 HDR 250C''"
−
*[https://docs.google.com/spreadsheets/d/1LpkaOpr7oNoyvxFkineD7i9FspO6LweJMulvZHJM5Zc/edit#gid=sharing LS Nitride2 Thickness Uniformity 2015]
+
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1459210138 High Deposition Rate SiO<sub>2</sub><nowiki> [ICP-PECVD] Present Data</nowiki>]
−
*[https://docs.google.com/spreadsheets/d/1FRzW9BaIPF2D3cxPgjLq8hbvrBHXDNkiW6DiPVKQBRM/edit#gid=sharing LS Nitride2 Thickness Uniformity 2016]
+
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=939753086 High Deposition Rate SiO<sub>2</sub><nowiki> [ICP-PECVD] Historical Data</nowiki>]
−
*[https://docs.google.com/spreadsheets/d/1vyrgvdEZFgnQUilpa5Ka2nOfowY8zlmJfbQ77EamNBg/edit#gid=sharing LS Nitride2 Thickness Uniformity 2017]
 
−
*[https://docs.google.com/spreadsheets/d/17OGrhbvP8O_0mBMIsmUmEwfyFaoJnNNpMFpgBUW7qzI/edit#gid=sharing LS Nitride2 Thickness Uniformity 2018]
 
−
*[https://docs.google.com/spreadsheets/d/17OGrhbvP8O_0mBMIsmUmEwfyFaoJnNNpMFpgBUW7qzI/edit#gid=sharing LS Nitride2 Thickness Uniformity 2019]
 
−
*[https://docs.google.com/spreadsheets/d/1M4ug8SAqy2Ky70LNLW3pL2MjSs69beJVhbC2BbabHaU/edit#gid=sharing LS Nitride2 Thickness Uniformity 2020]
 
  
−
==Amorphous-Si deposition (PECVD #2)==
+
==Si<sub>3</sub>N<sub>4</sub> [ICP-PECVD]==
  
−
*[//wiki.nanotech.ucsb.edu/wiki/images/9/9d/03-Amorphous-Si-PECVD-2.pdf Amorphous Si Deposition Recipe]
+
*[https://docs.google.com/spreadsheets/d/1VrgS0cB2OcdZVTCnDAesgQCLRaAgEB_Iajc_OrhXOo0/edit#gid=1199123007 Si<sub>3</sub>N<sub>4</sub><nowiki> [ICP-PECVD] Standard Recipe</nowiki>] - "''SiN 250C''"
−
*[//wiki.nanotech.ucsb.edu/wiki/images/0/09/ASi_deposition_and_film_stress_using_AV_dep_tool.pdf Amorphous Si Films and Their Stress]
+
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1670372499 Si<sub>3</sub>N<sub>4</sub><nowiki> [ICP-PECVD] Current Process Control Data</nowiki>]
 +
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=782128304 Si<sub>3</sub>N<sub>4</sub><nowiki> [ICP-PECVD] Historical Data</nowiki>] - before Oct. 2021
  
−
== Cleaning Recipes (PECVD #2) ==
+
==Low Stress Si<sub>3</sub>N<sub>4</sub> [ICP-PECVD]==
−
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:
 
−
#Wet cleaning (start cleaning by using a cleanroom wipe sprayed with DI. Wipe chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA. )
 
−
#Load the recipe for cleaning "STD CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding a required time for cleaning.
 
−
===[//wiki.nanotech.ucsb.edu/w/images/3/34/PECVD2_photo_for_cleaning.png Standard Clean Recipe: "STD CF4/O2 Clean recipe"] ===
 
−
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time.  The recipe is set up so that it will '''pop up a window for the cleaning time upon running the recipe''' - you do not need to edit the recipe before running it.
 
  
−
=[[ICP-PECVD (Unaxis VLR)]]=
+
*[https://docs.google.com/spreadsheets/d/1i2mE2K12EEulnCbO9KuU9PCcvHAmcGxTIXUF8x4IOWk/edit#gid=1199123007 Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [ICP-PECVD] Standard Recipe</nowiki>] - "''SiN Low Stress 250C''"
−
2020-02: New recipes have been characterized for low particulate count and repeatability. Only staff-supplied recipes are allowed in the tool. Please follow the [[ICP-PECVD (Unaxis VLR)#Documentation|'''new procedures''']] to ensure low particle counts in the chamber.
+
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1517031044 Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [ICP-PECVD] Current Process Control Data</nowiki>]
 +
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1024532473 Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [ICP-PECVD] Historical Data</nowiki>] - before Oct. 2021
  
−
  The system currently has '''Deuterated Silane (SiD<sub>4</sub>) installed''' - identical to the regular Silicon precursor SiH<sub>4</sub>, except that it significantly lowers optical absorption in the near-infrared due to shifted molecular vibrations/molecular weights.
+
==Standard Cleaning Procedure [ICP-PECVD]==
 +
You must edit the Post-Dep Clean recipe to correspond to your deposited thickness and material. See the [[ICP-PECVD (Unaxis VLR)#Documentation|Operating Procedure on the Unaxis Tool Page]] for details.
  
−
==== Historical Particulate Data ====
+
*SiNx etches at 20nm/min
−
* [https://docs.google.com/spreadsheets/d/1ZzbpDmkOI3IvGuKqyiQIP44sYJ89E3Zs9sLvjxvWMsc/edit#gid=sharing Particulates in Unaxis films @250C-2019]
+
*SiO<sub>2</sub> etches at 40nm/min
−
* [https://docs.google.com/spreadsheets/d/1fMebt-6BfAurcjMv1aDsmm6VgPqokU73_2ReZFqzEEk/edit#gid=sharing Particulates in Unaxis films @250C-2020]
 
  
−
==== Standard Recipes ====
+
===Standard Clean Recipe===
−
*[https://docs.google.com/spreadsheets/d/1T_4gaJQ3wHSNptoAtFR1fN0ePwfw3PsQ0DLSjqGeyM4/edit#gid=sharing SiO2 LDR 250C Recipe-2020]
 
−
*[https://docs.google.com/spreadsheets/d/1nsdGPpfyZfIesyYG1PIU9uYyuzQWrfpsvVWM6J_H6BI/edit#gid=sharing SiO2 HDR 250C Recipe-2020]
 
−
*[https://docs.google.com/spreadsheets/d/1UTr93aWx0MjCwVBwRmYjPwo9ASluGQ-OrJhVG_R57aY/edit#gid=sharing SiN 250C Recipe-2020]
 
−
*[https://docs.google.com/spreadsheets/d/1MXW7UNpTyk93ucOVQaSun5IX7QaUbSABNHNznb09qw8/edit#gid=sharing SiN LS 250C Recipe-2020]
 
−
 
 
−
==SiO2 LDR 250C Deposition (Unaxis VLR)==
 
−
''Low-Deposition Rate SiO<sub>2</sub>''
 
−
 
 
−
==== Historical Data ====
 
−
===== Thin-Film Properties =====
 
−
This data is for 780sec long SiO2 LDR (low deposition rate) deposition, and cleaning time is 900sec, following the procedure [[here]].
 
−
*[https://docs.google.com/spreadsheets/d/1wocoCPOOEDQcZbXJJNaZs1sr9dXBZpn1wUyglL8IQrI/edit#gid=sharing SiO2 LDR 250C 300nm Data-2019]
 
−
*[https://docs.google.com/spreadsheets/d/1bU2Gu3x3DNyrq8skMAQZJCsra-IcoDCT0U5D135YPgc/edit#gid=sharing SiO2 LDR 250C 300nm Data-2020]
 
−
===== Uniformity Data =====
 
−
*[https://docs.google.com/spreadsheets/d/1Xi21OrargcNRthZ2fM_56APB8O599ctDfq5E_6B5Ft0/edit#gid=sharing Thickness Uniformity SiO2 LDR 250C 300nm-2019]
 
−
*[https://docs.google.com/spreadsheets/d/1-ytu5R75FAXNfhJZTRuK2eRZyu_L6Hy1BWV2zN6_tRA/edit#gid=sharing Thickness Uniformity SiO2 LDR 250C 300nm-2020]
 
−
 
 
−
==SiO2 HDR 250C Deposition (Unaxis VLR)==
 
−
''High-Deposition Rate SiO<sub>2</sub>''
 
−
 
 
−
==== Historical Data ====
 
−
===== Thin-Film Properties =====
 
−
This data is for 180sec long SiO2 HDR ( high deposition rate) deposition, and cleaning time is 900sec, following the procedure [[here]].
 
−
*[https://docs.google.com/spreadsheets/d/16s-tUna9xrkKneK1lE-qSPuUHWlDmP6Qu3IngBXP3R8/edit#gid=sharing SiO2 HDR 250C 300nm Data-2019]
 
−
*[https://docs.google.com/spreadsheets/d/1OxHi5r9ifNvF8ODpIk6aoRevb4RdbbykwPVMm1g-yi4/edit#gid=sharing SiO2 HDR 250C 300nm Data-2020]
 
−
===== Uniformity Data =====
 
−
*[https://docs.google.com/spreadsheets/d/1Mm_rsTm9xDQ50kZx6X6EZ5dTegUvinq0zFxRtE8B2R4/edit#gid=sharing Thickness Uniformity SiO2 HDR 250C 300nm-2019]
 
−
*[https://docs.google.com/spreadsheets/d/1nzVeCKsmgL17zft6axQlixpvsEowJOG7qCnLQm_0XxE/edit#gid=sharing Thickness Uniformity SiO2 HDR 250C 300nm-2020]
 
−
 
 
−
== SiN 250C deposition (Unaxis VLR) ==
 
−
==== Historical Data ====
 
−
===== Thin-Film Properties =====
 
−
This data is for 480sec long SiN deposition, and cleaning time is 1500sec, following the procedure [[here]].
 
−
*[https://docs.google.com/spreadsheets/d/1VrgS0cB2OcdZVTCnDAesgQCLRaAgEB_Iajc_OrhXOo0/edit#gid=sharing SiN 250C 300nm Data-2020]
 
−
===== Uniformity Data =====
 
−
*[https://docs.google.com/spreadsheets/d/1YAx_Ix84xId8CAhDwZeFT7jLFUwg-BET9aBwg3DxUmQ/edit#gid=sharing Thickness Uniformity SiN 250C 300nm-2020]
 
−
 
 
−
== SiN LS 250C Deposition (Unaxis VLR) ==
 
−
''Low Stress Silicon-Nitride''
 
−
 
 
−
==== Historical Data ====
 
 
''To Be Added''
 
''To Be Added''
−
 
−
===== Thin-Film Properties =====
 
−
This data is for 180sec long SiN LS (low stress) deposition, and cleaning time is 1500sec, following the procedure [[here]].
 
−
*[https://docs.google.com/spreadsheets/d/1i2mE2K12EEulnCbO9KuU9PCcvHAmcGxTIXUF8x4IOWk/edit#gid=sharing SiN LS 250C 300nm Data-2020]
 
−
===== Uniformity Data =====
 
−
*[https://docs.google.com/spreadsheets/d/1NDyxH1i9COM2XTryLqYPE9yOekgRslAJUO7o56iTOEQ/edit#gid=sharing Thickness Uniformity SiN LS 250C 300nm-2020]
 
−
 
−
== Cleaning Recipes (Unaxis VLR Dep) ==
 
−
You must edit the Post-Dep Clean recipe to correspond to your deposited thickness and material.  See the [[ICP-PECVD (Unaxis VLR)#Documentation|Operating Procedure on the Unaxis Tool Page]] for details.
 
−
* SiNx etches at 20nm/min
 
−
* SiO2 etches at 40nm/min
 

Revision as of 17:01, 10 May 2022

Back to Vacuum Deposition Recipes.

PECVD 1 (PlasmaTherm 790)

PECVD 1 Process Control Plots - Plots of all process control data

SiO2 deposition (PECVD #1)

SiN deposition (PECVD #1)

Low Stress Si3N4 (PECVD#1)

SiOxNy deposition (PECVD #1)

Standard Cleaning Procedure (PECVD #1)

The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:

  1. Wet cleaning (start cleaning by using a cleanroom wipe sprayed with DI. Wipe chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA. )
  2. Load the recipe for cleaning "CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding a required time for cleaning.
Table of Cleaning Times
Film Dep'd Cleaning Time
SiO2 TBD
Si3N4 TBD
SiOxNy Same as XYZ

Standard Cleaning Recipe (PECVD#1): "CF4/O2 Clean"

Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will pop up a window for the cleaning time upon running the recipe - you do not need to edit the recipe before running it.

PECVD 2 (Advanced Vacuum)

PECVD 2 Process Control Plots - Plots of all process control data

SiO2 deposition (PECVD #2)

SiN deposition (PECVD #2)

Low-Stress SiN deposition (PECVD #2)

Low-Stress Silicon Nitride, Si3N4 (< ±100 MPa)

Amorphous-Si deposition (PECVD #2)

Standard Cleaning Procedure (PECVD #2)

The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:

  1. (If >29min dep time) Wet cleaning: Start cleaning by using a cleanroom wipe sprayed with DI. Wipe upper chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA & wiping again.
  2. Load the recipe for cleaning "STD CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding required time for cleaning.

Standard Clean Recipe (PECVD#2): "STD CF4/O2 Clean"

Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will pop up a window for the cleaning time upon running the recipe - you do not need to edit the recipe before running it.


Clean Times (PECVD#2)

Film Deposited Cleaning Time (Dry)
SiO2 1 min. clean for every 1 min. deposition
Si3N4 1 min. clean for every 7 min of deposition
If > 29min total dep time

(Season + Dep)

Wet Clean the Upper Lid/Chamber

DI water then Isopropyl Alcohol on chamber wall & portholes

ICP-PECVD (Unaxis VLR)

2020-02: New recipes have been characterized for low particulate count and repeatability.  Only staff-supplied recipes are allowed in the tool. Please follow the new procedures to ensure low particle counts in the chamber.

The system currently has Deuterated Silane (SiD4) installed - identical to the regular Silicon precursor SiH4, except that it significantly lowers optical absorption in the near-infrared due to shifted molecular vibrations/molecular weights. This gas is more expensive and thus more applicable to optical application than to general-purpose SiN films.

ICP-PECVD Process Control Plots - Plots of all Process Control data

Low Deposition Rate SiO2 [ICP-PECVD]

High Deposition Rate SiO2 [ICP-PECVD]

Si3N4 [ICP-PECVD]

Low Stress Si3N4 [ICP-PECVD]

Standard Cleaning Procedure [ICP-PECVD]

You must edit the Post-Dep Clean recipe to correspond to your deposited thickness and material. See the Operating Procedure on the Unaxis Tool Page for details.

  • SiNx etches at 20nm/min
  • SiO2 etches at 40nm/min

Standard Clean Recipe

To Be Added

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