Difference between revisions of "PECVD Recipes"

From UCSB Nanofab Wiki
Jump to navigation Jump to search
 
(4 intermediate revisions by the same user not shown)
Line 105: Line 105:
 
*[https://docs.google.com/spreadsheets/d/1OPZXe8g3H0wywIrPFel3nSZ5iyPs2mVIYUSVKfTtMDg/edit#gid=sharing Particulates in PECVD#2 films 2019]
 
*[https://docs.google.com/spreadsheets/d/1OPZXe8g3H0wywIrPFel3nSZ5iyPs2mVIYUSVKfTtMDg/edit#gid=sharing Particulates in PECVD#2 films 2019]
 
*[https://docs.google.com/spreadsheets/d/1Y9lomsf7bDojeXoAsEG7xvypx_sw_atpmPwB9xtK1Zk/edit#gid=sharing Particulates in PECVD#2 films 2020]
 
*[https://docs.google.com/spreadsheets/d/1Y9lomsf7bDojeXoAsEG7xvypx_sw_atpmPwB9xtK1Zk/edit#gid=sharing Particulates in PECVD#2 films 2020]
 +
*[https://docs.google.com/spreadsheets/d/1BauS7q_sGKkaeY6o3BOw2wyQsyS_DukJxCAbGantDW4/edit#gid=sharing Particulates in PECVD#2 films 2021]
  
 
==SiO<sub>2</sub> deposition (PECVD #2)==
 
==SiO<sub>2</sub> deposition (PECVD #2)==
Line 125: Line 126:
 
*[https://docs.google.com/spreadsheets/d/1Z9UMgaQC2PiLLrMk04mpKWkJLa1L_WFMAm5079eKxI0/edit#gid=sharing Oxide Data 2020]
 
*[https://docs.google.com/spreadsheets/d/1Z9UMgaQC2PiLLrMk04mpKWkJLa1L_WFMAm5079eKxI0/edit#gid=sharing Oxide Data 2020]
 
*[https://docs.google.com/spreadsheets/d/10XA3WnHjUZOLFunwUIlM2IqaRIiX_EGb6Jj_bw84gkI/edit#gid=sharing Oxide Data 2021]
 
*[https://docs.google.com/spreadsheets/d/10XA3WnHjUZOLFunwUIlM2IqaRIiX_EGb6Jj_bw84gkI/edit#gid=sharing Oxide Data 2021]
 +
 +
===== Thin-Film Properties =====
 +
*[https://docs.google.com/spreadsheets/d/19Z8IAVgumWuH0t8RN23LJ2wWZP7jYYLwRl9pDQP4obI/edit#gid=sharing Thick Oxide Data 2021]
  
 
===== Uniformity Data =====
 
===== Uniformity Data =====
Line 135: Line 139:
 
*[https://docs.google.com/spreadsheets/d/1064j6894X63WlRX3Uolxg1q1FRzUZLqSZQA9BWwzPOk/edit#gid=sharing Oxide Thickness Uniformity 2019]
 
*[https://docs.google.com/spreadsheets/d/1064j6894X63WlRX3Uolxg1q1FRzUZLqSZQA9BWwzPOk/edit#gid=sharing Oxide Thickness Uniformity 2019]
 
*[https://docs.google.com/spreadsheets/d/1Z9UMgaQC2PiLLrMk04mpKWkJLa1L_WFMAm5079eKxI0/edit#gid=sharing Oxide Thickness Uniformity 2020]
 
*[https://docs.google.com/spreadsheets/d/1Z9UMgaQC2PiLLrMk04mpKWkJLa1L_WFMAm5079eKxI0/edit#gid=sharing Oxide Thickness Uniformity 2020]
 +
*[https://docs.google.com/spreadsheets/d/1b9Fmzp_d-XiMerFtrDiCsmS7NMNoaBtS8T0DLqoii8Y/edit#gid=sharing Oxide Thickness Uniformity 2021]
  
 
==SiN deposition (PECVD #2)==
 
==SiN deposition (PECVD #2)==
Line 165: Line 170:
 
*[https://docs.google.com/spreadsheets/d/1hzj4Fb5fN8lS0m9-rm9AgEn0Zunif5grI4X7YkAMEFU/edit#gid=sharing Nitride2 Thickness Uniformity 2019]
 
*[https://docs.google.com/spreadsheets/d/1hzj4Fb5fN8lS0m9-rm9AgEn0Zunif5grI4X7YkAMEFU/edit#gid=sharing Nitride2 Thickness Uniformity 2019]
 
*[https://docs.google.com/spreadsheets/d/1xdzjLODpe2Xb7r4PGil1q-OFqSYKuZBivqLt1T6lezw/edit#gid=sharing Nitride2 Thickness Uniformity 2020]
 
*[https://docs.google.com/spreadsheets/d/1xdzjLODpe2Xb7r4PGil1q-OFqSYKuZBivqLt1T6lezw/edit#gid=sharing Nitride2 Thickness Uniformity 2020]
 +
*[https://docs.google.com/spreadsheets/d/19x70-CIyQ41pywpL-IusldLv7XYJps9aJT5-rYYQSCs/edit#gid=sharing Nitride2 Thickness Uniformity 2021]
  
 
==Low-Stress SiN deposition (PECVD #2)==
 
==Low-Stress SiN deposition (PECVD #2)==
Line 198: Line 204:
 
*[https://docs.google.com/spreadsheets/d/17OGrhbvP8O_0mBMIsmUmEwfyFaoJnNNpMFpgBUW7qzI/edit#gid=sharing LS Nitride2 Thickness Uniformity 2019]
 
*[https://docs.google.com/spreadsheets/d/17OGrhbvP8O_0mBMIsmUmEwfyFaoJnNNpMFpgBUW7qzI/edit#gid=sharing LS Nitride2 Thickness Uniformity 2019]
 
*[https://docs.google.com/spreadsheets/d/1M4ug8SAqy2Ky70LNLW3pL2MjSs69beJVhbC2BbabHaU/edit#gid=sharing LS Nitride2 Thickness Uniformity 2020]
 
*[https://docs.google.com/spreadsheets/d/1M4ug8SAqy2Ky70LNLW3pL2MjSs69beJVhbC2BbabHaU/edit#gid=sharing LS Nitride2 Thickness Uniformity 2020]
 +
*[https://docs.google.com/spreadsheets/d/12wvXFHN7CV_XSFj6hB5Gd7SIXERwzkTM__58ZqzPOuk/edit#gid=sharing LS Nitride2 Thickness Uniformity 2021]
  
 
==Amorphous-Si deposition (PECVD #2)==
 
==Amorphous-Si deposition (PECVD #2)==

Latest revision as of 15:47, 19 February 2021

Back to Vacuum Deposition Recipes.

PECVD 1 (PlasmaTherm 790)

Historical Particulate Data

SiN deposition (PECVD #1)

Historical Data

Thin-Film Properties
Uniformity Data

SiO2 deposition (PECVD #1)

Historical Data

Thin-Film Properties
Thick-Film Properties

Uniformity Data

Low-Stress SiN - LS-SiN (PECVD#1)

SiOxNy deposition (PECVD #1)

Cleaning Recipes (PECVD #1)

The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:

  1. Wet cleaning (start cleaning by using a cleanroom wipe sprayed with DI. Wipe chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA. )
  2. Load the recipe for cleaning "CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding a required time for cleaning.

Standard Cleaning Recipe: "CF4/O2 Clean"

Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will pop up a window for the cleaning time upon running the recipe - you do not need to edit the recipe before running it.

PECVD 2 (Advanced Vacuum)

Historical Particulate Data

SiO2 deposition (PECVD #2)

Standard Recipe

Historical Data

Thin-Film Properties
Thin-Film Properties
Uniformity Data

SiN deposition (PECVD #2)

Standard Recipe

Historical Data

Thin-Film Properties
Uniformity Data

Low-Stress SiN deposition (PECVD #2)

Low-Stress SilIcon Nitride (< 100 MPa)

Standard Recipe

Historical Data

Thin-Film Properties
Uniformity Data

Amorphous-Si deposition (PECVD #2)

Cleaning Recipes (PECVD #2)

The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:

  1. Wet cleaning (start cleaning by using a cleanroom wipe sprayed with DI. Wipe chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA. )
  2. Load the recipe for cleaning "STD CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding a required time for cleaning.

Standard Clean Recipe: "STD CF4/O2 Clean recipe"

Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will pop up a window for the cleaning time upon running the recipe - you do not need to edit the recipe before running it.

ICP-PECVD (Unaxis VLR)

2020-02: New recipes have been characterized for low particulate count and repeatability.  Only staff-supplied recipes are allowed in the tool. Please follow the new procedures to ensure low particle counts in the chamber.
The system currently has Deuterated Silane (SiD4) installed - identical to the regular Silicon precursor SiH4, except that it significantly lowers optical absorption in the near-infrared due to shifted molecular vibrations/molecular weights.

Historical Particulate Data

Standard Recipes

SiO2 LDR 250C Deposition (Unaxis VLR)

Low-Deposition Rate SiO2

Historical Data

Thin-Film Properties

This data is for 780sec long SiO2 LDR (low deposition rate) deposition, and cleaning time is 900sec, following the procedure here.

Uniformity Data

SiO2 HDR 250C Deposition (Unaxis VLR)

High-Deposition Rate SiO2

Historical Data

Thin-Film Properties

This data is for 180sec long SiO2 HDR ( high deposition rate) deposition, and cleaning time is 900sec, following the procedure here.

Uniformity Data

SiN 250C deposition (Unaxis VLR)

Historical Data

Thin-Film Properties

This data is for 480sec long SiN deposition, and cleaning time is 1500sec, following the procedure here.

Uniformity Data

SiN LS 250C Deposition (Unaxis VLR)

Low Stress Silicon-Nitride

Historical Data

To Be Added

Thin-Film Properties

This data is for 180sec long SiN LS (low stress) deposition, and cleaning time is 1500sec, following the procedure here.

Uniformity Data

Cleaning Recipes (Unaxis VLR Dep)

You must edit the Post-Dep Clean recipe to correspond to your deposited thickness and material. See the Operating Procedure on the Unaxis Tool Page for details.

  • SiNx etches at 20nm/min
  • SiO2 etches at 40nm/min