Difference between revisions of "PECVD 2 (Advanced Vacuum)"

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*[[media:Advanced PECVD 2-Operating-Manual for Adv. PECVD 2.pdf|Operating Instruction Manual for Advanced PECVD 2]]
 
*[[media:Advanced PECVD 2-Operating-Manual for Adv. PECVD 2.pdf|Operating Instruction Manual for Advanced PECVD 2]]
 
*[[Advanced PECVD 2 Standard recipes.pdf|Advanced PECVD 2 Standard Recipes]]
 
*[[Advanced PECVD 2 Standard recipes.pdf|Advanced PECVD 2 Standard Recipes]]
*[[Advanced PECVD 2 Data-particles, thickness, index.pdf|Advanced PECVD 2 Data-particles, thickness, index]]
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*[[media:Advanced PECVD 2 Data-particles, thickness, index.pdf|Advanced PECVD 2 Data-particles, thickness, index]]

Revision as of 13:10, 14 August 2012

PECVD 2 (Advanced Vacuum)
PECVD2.jpg
Tool Type Vacuum Deposition
Location Bay 2
Supervisor Mike Silva
Supervisor Phone (805) 893-3096
Supervisor E-Mail silva@ece.ucsb.edu
Description Vision 310 Advanced Vacuum PECVD
Manufacturer Veeco
Vacuum Deposition Recipes
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About

This open-load system is dedicated to PECVD of SiO2, SiNx, SiOxNy, and a-Si using Silane (2%SiH4, 98% He), N2O, NH3, and N2 gases. The sample electrode has a 270mm diameter useable area, allowing for multiple 4” wafer depositions in a single run. Standard operating temperature is 300C, but can be user changed for temps ranging anywhere from 250 to 350C. The system is equipped with a dual generator, dual frequency option for growth of low-stress Nitride films.

See Also

Documentation