Difference between revisions of "PECVD1 Wafer Coating Process"

From UCSB Nanofab Wiki
Jump to navigation Jump to search
Line 1: Line 1:
 
There are two standard recipes for SiN and SiO2 at 250C in PECVD#1. Instructions bellow explain how to run each deposition.
 
There are two standard recipes for SiN and SiO2 at 250C in PECVD#1. Instructions bellow explain how to run each deposition.
  
=== PECVD#1 SiN @250C ===
+
==== PECVD#1 SiN @250C ====
 
# Log in to PECVD #1  
 
# Log in to PECVD #1  
 
# Seasoning  
 
# Seasoning  
Line 15: Line 15:
 
#* Log out
 
#* Log out
  
=== PECVD#1 SiO2 @250C ===
+
==== PECVD#1 SiO2 @250C ====
 
#Log in to PECVD #1  
 
#Log in to PECVD #1  
 
# Seasoning  
 
# Seasoning  

Revision as of 16:28, 22 April 2020

There are two standard recipes for SiN and SiO2 at 250C in PECVD#1. Instructions bellow explain how to run each deposition.

PECVD#1 SiN @250C

  1. Log in to PECVD #1
  2. Seasoning
    • Load the seasoning recipe (SiN seasoning), and run it. The goal of this step is to coat chamber walls and prepare it for deposition.
  3. Deposition
    • Vent the chamber and load the substrate (place it in the center of platen). You can place small pieces around the wafer to protect it from moving.
    • Pump down.
    • Load the deposition recipe (SiN@250C), and run it. Deposition time is variable. Get the rate from historical data.
    • Unload the wafer.
  4. Cleaning
    • Wipe sidewall first with DI water, followed by IPA.
    • Load the cleaning recipe (CH4/O2 clean). Edit the recipe and enter required time for cleaning.
    • Log out

PECVD#1 SiO2 @250C

  1. Log in to PECVD #1
  2. Seasoning
    • Load the seasoning recipe( SiO2 seasoning), and run it. The goal of this step is to coat chamber walls and prepare it for deposition.
  3. Deposition
    • Vent the chamber and load the substarte (place it in the center of platen). You can place small pieces around the wafer to protect it from moving.
    • Pump down.
    • Load the deposition recipe( SiO2@250C), and run it. Deposition time is variable. Get the rate from historical data.
    • Unload the wafer.
  4. Cleaning
    • Wipe sidewall first with DI water, followed by IPA.
    • Load for cleaning recipe (CF4/O2). Edit the recipe and enter required time for cleaning.
    • Log out