PECVD1 Recipes

PECVD 1 (PlasmaTherm 790)

SiN deposition (PECVD #1)

• SiN Standard Recipe
• SiN Data November 2014
• SiN 1000A Thickness uniformity 2014
• Low Stress Si₃N₄ - Variable Stress Recipes
• Low Stress Si₃N₄ - Variable Stress Plot

• Deposition rate~11.25nm/min (users must calibrate this prior to critical deps)
• HF e.r.~89nm/min
• Stress~446MPa
• Refractive Index~1.940

SiO₂ deposition (PECVD #1)

• SiO₂ Standard Recipe
• SiO₂ Data November 2014
• SiO₂ 1000A Thickness uniformity 2014

• HF e.r.~639nm/min
• Stress~-415MPa
• Refractive Index~1.461

SiO_xN_y deposition (PECVD #1)

• SiO_xN_y Deposition Recipes - Varying N/O Ratio
• SiO_xN_y Stress/Index vs. O/N Ratio
• SiO_xN_y Recipe
• SiO_xN_y Data November 2014
• SiO_xN_y 3000A Thickness uniformity 2014

• Deposition rate~14.65nm/min (users must calibrate this prior to critical deps)
• HF e.r.~411nm/min
• Stress~137MPa
• Refractive Index~1.712