PECVD1 Recipes

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PECVD 1 (PlasmaTherm 790)

SiN deposition (PECVD #1)

  • Deposition rate~11.30nm/min (users must calibrate this prior to critical deps)
  • HF e.r.~90nm/min
  • Stress~444MPa
  • Refractive Index~1.940

SiO2 deposition (PECVD #1)

  • Deposition rate~35.22nm/min (users must calibrate this prior to critical deps)
  • HF e.r.~646nm/min
  • Stress~-407MPa
  • Refractive Index~1.460

SiOxNy deposition (PECVD #1)


  • [[media:|SiOxNy Standard Recipe]]


  • Deposition rate~14.50nm/min (users must calibrate this prior to critical deps)
  • HF e.r.~399nm/min
  • Stress~145MPa
  • Refractive Index~1.714