Difference between revisions of "PECVD1 Recipes"
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* [[media:PECVD1-SiON-Recipe.pdf|Low Stress Si<sub>3</sub>N<sub>4</sub> - Variable Stress Recipes]] |
* [[media:PECVD1-SiON-Recipe.pdf|Low Stress Si<sub>3</sub>N<sub>4</sub> - Variable Stress Recipes]] |
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* [[media:PECVD1-SiON-Recipe.pdf|Low Stress Si<sub>3</sub>N<sub>4</sub> - Variable Stress Plot]] |
* [[media:PECVD1-SiON-Recipe.pdf|Low Stress Si<sub>3</sub>N<sub>4</sub> - Variable Stress Plot]] |
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| − | *Deposition rate~11.21nm/min (users must calibrate this prior to critical deps) |
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| − | *HF e.r.~89nm/min |
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| − | *Stress~447MPa |
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| − | *Refractive Index~1.942 |
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== SiO<sub>2</sub> deposition (PECVD #1) == |
== SiO<sub>2</sub> deposition (PECVD #1) == |
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Revision as of 09:48, 10 December 2014
PECVD 1 (PlasmaTherm 790)
SiN deposition (PECVD #1)
- SiN Standard Recipe
- SiN Data 2014
- SiN 1000A Thickness uniformity 2014
- Low Stress Si3N4 - Variable Stress Recipes
- Low Stress Si3N4 - Variable Stress Plot
SiO2 deposition (PECVD #1)
- Deposition rate~35.52nm/min (users must calibrate this prior to critical deps)
- HF e.r.~645nm/min
- Stress~-408MPa
- Refractive Index~1.461
LS SiOxNy deposition (PECVD #1)
- SiOxNy Deposition Recipes - Varying N/O Ratio
- SiOxNy Stress/Index vs. O/N Ratio
- SiOxNy Recipe
- SiOxNy Data December 2014
- SiOxNy 3000A Thickness uniformity 2014