Difference between revisions of "PECVD1 Recipes"

From UCSB Nanofab Wiki
Jump to navigation Jump to search
Line 43: Line 43:
 
*[https://docs.google.com/spreadsheets/d/1Joz0az9TGZWQc4CiMQJZzLBbNFbx_hH2Oc0B4NNJmYk/edit#gid=978933038=sharing LS SiN Data December 2014]
 
*[https://docs.google.com/spreadsheets/d/1Joz0az9TGZWQc4CiMQJZzLBbNFbx_hH2Oc0B4NNJmYk/edit#gid=978933038=sharing LS SiN Data December 2014]
 
*[https://docs.google.com/spreadsheets/d/1xIzc2CufRYNSfAtsOXpw3IzHreeu42BWrLBV0kzP6kA/edit#gid=481681015=sharing LS SiN 3000A Thickness uniformity 2014]
 
*[https://docs.google.com/spreadsheets/d/1xIzc2CufRYNSfAtsOXpw3IzHreeu42BWrLBV0kzP6kA/edit#gid=481681015=sharing LS SiN 3000A Thickness uniformity 2014]
 
*Deposition rate~14.99nm/min (users must calibrate this prior to critical deps)
 
*HF e.r.~417nm/min
 
*Stress~133MPa
 
*Refractive Index~1.714
 

Revision as of 16:45, 5 December 2014

PECVD 1 (PlasmaTherm 790)

SiN deposition (PECVD #1)

  • Deposition rate~11.23nm/min (users must calibrate this prior to critical deps)
  • HF e.r.~89nm/min
  • Stress~450MPa
  • Refractive Index~1.942

SiO2 deposition (PECVD #1)

  • Deposition rate~35.52nm/min (users must calibrate this prior to critical deps)
  • HF e.r.~645nm/min
  • Stress~-408MPa
  • Refractive Index~1.461

LS SiOxNy deposition (PECVD #1)

  • Deposition rate~14.99nm/min (users must calibrate this prior to critical deps)
  • HF e.r.~417nm/min
  • Stress~133MPa
  • Refractive Index~1.714

LS SiN deposition (PECVD #1)