Difference between revisions of "PECVD1 Recipes"

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== SiN deposition (PECVD #1) ==
 
== SiN deposition (PECVD #1) ==
 
*[[media:PECVD1-SiN-standard recipe 2014.pdf|SiN Standard Recipe]]
 
*[[media:PECVD1-SiN-standard recipe 2014.pdf|SiN Standard Recipe]]
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEN6LV93LXlnbUhIWU1adVZWMWlXYnc&usp=drive_web#gid=sharing SiN Data May 2014]
+
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEN6LV93LXlnbUhIWU1adVZWMWlXYnc&usp=drive_web#gid=sharing SiN Data June 2014]
 
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dElmTXZyOEZsOFdrMVhNLWpKXzVmNWc&usp=sharing SiN 1000A Thickness uniformity 2014]
 
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dElmTXZyOEZsOFdrMVhNLWpKXzVmNWc&usp=sharing SiN 1000A Thickness uniformity 2014]
 
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Revision as of 15:22, 11 June 2014

PECVD 1 (PlasmaTherm 790)

SiN deposition (PECVD #1)

  • Deposition rate~11.21nm/min (users must calibrate this prior to critical deps)
  • HF e.r.~87nm/min
  • Stress~476MPa
  • Refractive Index~1.936

SiO2 deposition (PECVD #1)

  • Deposition rate~35.73nm/min (users must calibrate this prior to critical deps)
  • HF e.r.~610nm/min
  • Stress~-402MPa
  • Refractive Index~1.460

SiOxNy deposition (PECVD #1)