Difference between revisions of "PECVD1 Recipes"
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*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEw0bjFEdTF2SUhRa25Ca0d0SzBha3c&usp=drive_web#gid=sharing SiO<sub>2</sub> Data April 2014] |
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEw0bjFEdTF2SUhRa25Ca0d0SzBha3c&usp=drive_web#gid=sharing SiO<sub>2</sub> Data April 2014] |
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*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEttR2JSTkRoamR0SUZ4bE5QUW9uS2c&usp=sharing SiO<sub>2</sub> 1000A Thickness uniformity 2014] |
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEttR2JSTkRoamR0SUZ4bE5QUW9uS2c&usp=sharing SiO<sub>2</sub> 1000A Thickness uniformity 2014] |
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| + | *Deposition rate~35.73nm/min |
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| + | *HF e.r.~610nm/min |
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| + | *Stress~-402MPa |
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| + | *Refractive Index~1.460 |
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== SiO<sub>x</sub>N<sub>y</sub> deposition (PECVD #1) == |
== SiO<sub>x</sub>N<sub>y</sub> deposition (PECVD #1) == |
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Revision as of 18:51, 21 May 2014
PECVD 1 (PlasmaTherm 790)
SiN deposition (PECVD #1)
- SiN Standard Recipe
- SiN Data April 2014
- SiN 1000A Thickness uniformity 2014
- Low Stress Si3N4 - Variable Stress Recipes
- Low Stress Si3N4 - Variable Stress Plot
- Deposition rate~11.21nm/min
- HF e.r.~87nm/min
- Stress~476MPa
- Refractive Index~1.936
SiO2 deposition (PECVD #1)
- Deposition rate~35.73nm/min
- HF e.r.~610nm/min
- Stress~-402MPa
- Refractive Index~1.460