Difference between revisions of "PECVD1 Recipes"
Jump to navigation
Jump to search
| Line 31: | Line 31: | ||
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEttR2JSTkRoamR0SUZ4bE5QUW9uS2c&usp=sharing SiO<sub>x</sub>N<sub>y</sub> 3000A Thickness uniformity 2014] |
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEttR2JSTkRoamR0SUZ4bE5QUW9uS2c&usp=sharing SiO<sub>x</sub>N<sub>y</sub> 3000A Thickness uniformity 2014] |
||
| − | *Deposition rate~14. |
+ | *Deposition rate~14.65nm/min (users must calibrate this prior to critical deps) |
| − | *HF e.r.~ |
+ | *HF e.r.~411nm/min |
| − | *Stress~ |
+ | *Stress~137MPa |
| − | *Refractive Index~1. |
+ | *Refractive Index~1.712 |
Revision as of 08:46, 14 October 2014
PECVD 1 (PlasmaTherm 790)
SiN deposition (PECVD #1)
- SiN Standard Recipe
- SiN Data October 2014
- SiN 1000A Thickness uniformity 2014
- Low Stress Si3N4 - Variable Stress Recipes
- Low Stress Si3N4 - Variable Stress Plot
- Deposition rate~11.25nm/min (users must calibrate this prior to critical deps)
- HF e.r.~89nm/min
- Stress~446MPa
- Refractive Index~1.940
SiO2 deposition (PECVD #1)
- Deposition rate~35.24nm/min (users must calibrate this prior to critical deps)
- HF e.r.~639nm/min
- Stress~-415MPa
- Refractive Index~1.461
SiOxNy deposition (PECVD #1)
- SiOxNy Deposition Recipes - Varying N/O Ratio
- SiOxNy Stress/Index vs. O/N Ratio
- SiOxNy Recipe
- SiOxNy Data October 2014
- SiOxNy 3000A Thickness uniformity 2014
- Deposition rate~14.65nm/min (users must calibrate this prior to critical deps)
- HF e.r.~411nm/min
- Stress~137MPa
- Refractive Index~1.712