Difference between revisions of "PECVD1 Recipes"

From UCSB Nanofab Wiki
Jump to navigation Jump to search
Line 30: Line 30:
   
 
*[[media:|SiO<sub>x</sub>N<sub>y</sub> Standard Recipe]]
  
*[[media:|SiO<sub>x</sub>N<sub>y</sub> Standard Recipe]]
  +
  +
  +
*{https://docs.google.com/spreadsheets/d/1rixyzAAq6q08M5OwvZiDVoh3K8B566XKM-UZAQIAnsg/edit#gid=sharing SiO<sub>x</sub>N<sub>y</sub> Data September 2014]
 
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEw0bjFEdTF2SUhRa25Ca0d0SzBha3c&usp=drive_web#gid=sharing SiO<sub>x</sub>N<sub>y</sub> Data September 2014]
  
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEw0bjFEdTF2SUhRa25Ca0d0SzBha3c&usp=drive_web#gid=sharing SiO<sub>x</sub>N<sub>y</sub> Data September 2014]
 
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEttR2JSTkRoamR0SUZ4bE5QUW9uS2c&usp=sharing SiO<sub>x</sub>N<sub>y</sub> 3000A Thickness uniformity 2014]
  
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEttR2JSTkRoamR0SUZ4bE5QUW9uS2c&usp=sharing SiO<sub>x</sub>N<sub>y</sub> 3000A Thickness uniformity 2014]

Revision as of 12:33, 16 September 2014

PECVD 1 (PlasmaTherm 790)

SiN deposition (PECVD #1)

  • Deposition rate~11.30nm/min (users must calibrate this prior to critical deps)
  • HF e.r.~90nm/min
  • Stress~444MPa
  • Refractive Index~1.940

SiO2 deposition (PECVD #1)

  • Deposition rate~35.22nm/min (users must calibrate this prior to critical deps)
  • HF e.r.~646nm/min
  • Stress~-407MPa
  • Refractive Index~1.460

SiOxNy deposition (PECVD #1)


  • [[media:|SiOxNy Standard Recipe]]


  • Deposition rate~14.50nm/min (users must calibrate this prior to critical deps)
  • HF e.r.~399nm/min
  • Stress~145MPa
  • Refractive Index~1.714
Retrieved from "https://wiki.nanofab.ucsb.edu/w/index.php?title=PECVD1_Recipes&oldid=153358"