Difference between revisions of "PECVD1 Recipes"
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| − | == SiO<sub>2</sub> deposition (PECVD #1) == |
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*[[media:PECVD1-SiO2-standard recipe 2014.pdf|SiO<sub>2</sub> Standard Recipe]] |
*[[media:PECVD1-SiO2-standard recipe 2014.pdf|SiO<sub>2</sub> Standard Recipe]] |
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*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEw0bjFEdTF2SUhRa25Ca0d0SzBha3c&usp=drive_web#gid=sharing SiO<sub>2</sub> Data September 2014] |
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEw0bjFEdTF2SUhRa25Ca0d0SzBha3c&usp=drive_web#gid=sharing SiO<sub>2</sub> Data September 2014] |
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Revision as of 11:28, 16 September 2014
PECVD 1 (PlasmaTherm 790)
SiN deposition (PECVD #1)
- SiN Standard Recipe
- SiN Data September 2014
- SiN 1000A Thickness uniformity 2014
- Low Stress Si3N4 - Variable Stress Recipes
- Low Stress Si3N4 - Variable Stress Plot
- Deposition rate~11.30nm/min (users must calibrate this prior to critical deps)
- HF e.r.~90nm/min
- Stress~444MPa
- Refractive Index~1.940
SiO2 deposition (PECVD #1)
- Deposition rate~35.22nm/min (users must calibrate this prior to critical deps)
- HF e.r.~646nm/min
- Stress~-407MPa
- Refractive Index~1.460
SiOxNy deposition (PECVD #1)
- Deposition rate~35.22nm/min (users must calibrate this prior to critical deps)
- HF e.r.~646nm/min
- Stress~-407MPa
- Refractive Index~1.460