Difference between revisions of "PECVD1 Recipes"
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*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEttR2JSTkRoamR0SUZ4bE5QUW9uS2c&usp=sharing SiO<sub>2</sub> 1000A Thickness uniformity 2014] |
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEttR2JSTkRoamR0SUZ4bE5QUW9uS2c&usp=sharing SiO<sub>2</sub> 1000A Thickness uniformity 2014] |
||
| − | *Deposition rate~35. |
+ | *Deposition rate~35.22nm/min (users must calibrate this prior to critical deps) |
| − | *HF e.r.~ |
+ | *HF e.r.~646nm/min |
| − | *Stress~- |
+ | *Stress~-407MPa |
*Refractive Index~1.460 |
*Refractive Index~1.460 |
||
Revision as of 11:20, 16 September 2014
PECVD 1 (PlasmaTherm 790)
SiN deposition (PECVD #1)
- SiN Standard Recipe
- SiN Data September 2014
- SiN 1000A Thickness uniformity 2014
- Low Stress Si3N4 - Variable Stress Recipes
- Low Stress Si3N4 - Variable Stress Plot
- Deposition rate~11.30nm/min (users must calibrate this prior to critical deps)
- HF e.r.~90nm/min
- Stress~444MPa
- Refractive Index~1.940
SiO2 deposition (PECVD #1)
- Deposition rate~35.22nm/min (users must calibrate this prior to critical deps)
- HF e.r.~646nm/min
- Stress~-407MPa
- Refractive Index~1.460