Difference between revisions of "PECVD1 Recipes"
Jump to navigation
Jump to search
| Line 9: | Line 9: | ||
*Deposition rate~11.30nm/min (users must calibrate this prior to critical deps) |
*Deposition rate~11.30nm/min (users must calibrate this prior to critical deps) |
||
| − | *HF e.r.~ |
+ | *HF e.r.~90nm/min |
| − | *Stress~ |
+ | *Stress~444MPa |
| − | *Refractive Index~1. |
+ | *Refractive Index~1.940 |
== SiO<sub>2</sub> deposition (PECVD #1) == |
== SiO<sub>2</sub> deposition (PECVD #1) == |
||
Revision as of 11:19, 16 September 2014
PECVD 1 (PlasmaTherm 790)
SiN deposition (PECVD #1)
- SiN Standard Recipe
- SiN Data September 2014
- SiN 1000A Thickness uniformity 2014
- Low Stress Si3N4 - Variable Stress Recipes
- Low Stress Si3N4 - Variable Stress Plot
- Deposition rate~11.30nm/min (users must calibrate this prior to critical deps)
- HF e.r.~90nm/min
- Stress~444MPa
- Refractive Index~1.940
SiO2 deposition (PECVD #1)
- Deposition rate~35.41nm/min (users must calibrate this prior to critical deps)
- HF e.r.~669nm/min
- Stress~-414MPa
- Refractive Index~1.460