Difference between revisions of "OLD - PECVD2 Recipes"
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== SiN deposition (PECVD #2) == |
== SiN deposition (PECVD #2) == |
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*[[media:New Advanced PECVD-Nitride2 300C standard recipe.pdf|Nitride2 Standard Recipe]] |
*[[media:New Advanced PECVD-Nitride2 300C standard recipe.pdf|Nitride2 Standard Recipe]] |
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| − | *[[media:ADV PECVD NITRIDE2-Data April 2014.pdf|Nitride2 Data (Deposition Rate, Refractive Index, Stress, HF etch rate)]] |
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*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dDE0R3FlenNPa2txNmRldTczMXZNNnc#gid=sharing Nitride2 Data April 2014] |
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dDE0R3FlenNPa2txNmRldTczMXZNNnc#gid=sharing Nitride2 Data April 2014] |
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*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dERkYm85bGtYQVpjVk5GTGJuMkg2anc&usp=drive_web#gid=sharing Nitride2 Thickness uniformity 2014] |
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dERkYm85bGtYQVpjVk5GTGJuMkg2anc&usp=drive_web#gid=sharing Nitride2 Thickness uniformity 2014] |
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Revision as of 18:40, 21 May 2014
PECVD 2 (Advanced Vacuum)
SiN deposition (PECVD #2)
- Deposition Rate: ≈ 8.29 nm/min
- Refractive Index: ≈ 1.955
- Stress ≈ 498MPa
- HF etch rate:~48nm/min
SiO2 deposition (PECVD #2)
- Oxide Standard Recipe
- Oxide Data (Deposition Rate, Refractive Index, Stress, HF etch rate )
- Oxide Data April 2014
- Oxide Thickness uniformity 2014
- Deposition Rate: ≈ 28.0 nm/min
- Refractive Index: ≈ 1.472
- Stress ≈ -270MPa
LS SiN deposition (PECVD #2)
- LS Nitride2 Standard Recipe
- LS Nitride2 Data (Deposition Rate, Refractive Index, Stress, HF etch rate )
- LS Nitride2 Data April 2014
- Deposition Rate: ≈ 8.34 nm/min
- Refractive Index: ≈ 1.932
- Stress ≈ -46MPa