Difference between revisions of "OLD - PECVD2 Recipes"
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*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dERkYm85bGtYQVpjVk5GTGJuMkg2anc&usp=drive_web#gid=sharing Nitride2 Thickness uniformity 2014] |
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dERkYm85bGtYQVpjVk5GTGJuMkg2anc&usp=drive_web#gid=sharing Nitride2 Thickness uniformity 2014] |
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| − | *Deposition Rate: ≈ |
+ | *Deposition Rate: ≈ 8.29 nm/min |
| − | *Refractive Index: ≈ 1. |
+ | *Refractive Index: ≈ 1.955 |
| − | *Stress ≈ |
+ | *Stress ≈ 498MPa |
| + | *HF etch rate:~48nm/min |
||
== SiO<sub>2</sub> deposition (PECVD #2) == |
== SiO<sub>2</sub> deposition (PECVD #2) == |
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Revision as of 18:39, 21 May 2014
PECVD 2 (Advanced Vacuum)
SiN deposition (PECVD #2)
- Nitride2 Standard Recipe
- Nitride2 Data (Deposition Rate, Refractive Index, Stress, HF etch rate)
- Nitride2 Data April 2014
- Nitride2 Thickness uniformity 2014
- Deposition Rate: ≈ 8.29 nm/min
- Refractive Index: ≈ 1.955
- Stress ≈ 498MPa
- HF etch rate:~48nm/min
SiO2 deposition (PECVD #2)
- Oxide Standard Recipe
- Oxide Data (Deposition Rate, Refractive Index, Stress, HF etch rate )
- Oxide Data April 2014
- Oxide Thickness uniformity 2014
- Deposition Rate: ≈ 28.0 nm/min
- Refractive Index: ≈ 1.472
- Stress ≈ -270MPa
LS SiN deposition (PECVD #2)
- LS Nitride2 Standard Recipe
- LS Nitride2 Data (Deposition Rate, Refractive Index, Stress, HF etch rate )
- LS Nitride2 Data April 2014
- Deposition Rate: ≈ 8.34 nm/min
- Refractive Index: ≈ 1.932
- Stress ≈ -46MPa