Difference between revisions of "OLD - PECVD2 Recipes"
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*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dENSak1ZNnVaVTFEQTBzdDJMSDlDTFE&usp=drive_web#gid=1=sharing LS Nitride2 Thickness uniformity 2014] |
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dENSak1ZNnVaVTFEQTBzdDJMSDlDTFE&usp=drive_web#gid=1=sharing LS Nitride2 Thickness uniformity 2014] |
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| − | *Deposition Rate: ≈ 8. |
+ | *Deposition Rate: ≈ 8.14 nm/min (users must calibrate this prior to critical deps) |
*Refractive Index: ≈ 1.935 |
*Refractive Index: ≈ 1.935 |
||
| − | *Stress ≈ - |
+ | *Stress ≈ -7.18MPa |
| − | *HF etch rate~ |
+ | *HF etch rate~48nm/min |
== Amorphous-Si deposition (PECVD #2) == |
== Amorphous-Si deposition (PECVD #2) == |
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Revision as of 16:00, 1 August 2014
PECVD 2 (Advanced Vacuum)
SiN deposition (PECVD #2)
- Deposition Rate: ≈ 8.17 nm/min (users must calibrate this prior to critical deps)
- Refractive Index: ≈ 1.957
- Stress ≈ 499MPa
- HF etch rate:~49nm/min
SiO2 deposition (PECVD #2)
- Deposition Rate: ≈ 28.50 nm/min (users must calibrate this prior to critical deps)
- Refractive Index: ≈ 1.474
- Stress ≈ -252MPa
- HF etch rate~616nm/min
LS SiN deposition (PECVD #2)
- Deposition Rate: ≈ 8.14 nm/min (users must calibrate this prior to critical deps)
- Refractive Index: ≈ 1.935
- Stress ≈ -7.18MPa
- HF etch rate~48nm/min