Difference between revisions of "OLD - PECVD2 Recipes"
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*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dDRjSHEtYUZRUTg4azE2U0JGUTg2M1E#gid=sharing Oxide Thickness uniformity 2014] |
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dDRjSHEtYUZRUTg4azE2U0JGUTg2M1E#gid=sharing Oxide Thickness uniformity 2014] |
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| − | *Deposition Rate: ≈ 28. |
+ | *Deposition Rate: ≈ 28.50 nm/min (users must calibrate this prior to critical deps) |
| − | *Refractive Index: ≈ 1. |
+ | *Refractive Index: ≈ 1.474 |
| − | *Stress ≈ - |
+ | *Stress ≈ -252MPa |
| − | *HF etch rate~ |
+ | *HF etch rate~616nm/min |
==LS SiN deposition (PECVD #2) == |
==LS SiN deposition (PECVD #2) == |
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Revision as of 15:58, 1 August 2014
PECVD 2 (Advanced Vacuum)
SiN deposition (PECVD #2)
- Deposition Rate: ≈ 8.17 nm/min (users must calibrate this prior to critical deps)
- Refractive Index: ≈ 1.957
- Stress ≈ 499MPa
- HF etch rate:~49nm/min
SiO2 deposition (PECVD #2)
- Deposition Rate: ≈ 28.50 nm/min (users must calibrate this prior to critical deps)
- Refractive Index: ≈ 1.474
- Stress ≈ -252MPa
- HF etch rate~616nm/min
LS SiN deposition (PECVD #2)
- Deposition Rate: ≈ 8.17 nm/min (users must calibrate this prior to critical deps)
- Refractive Index: ≈ 1.935
- Stress ≈ -0.04MPa
- HF etch rate~47nm/min