Difference between revisions of "OLD - PECVD2 Recipes"
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*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dDRjSHEtYUZRUTg4azE2U0JGUTg2M1E#gid=sharing Oxide Thickness uniformity 2014] |
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dDRjSHEtYUZRUTg4azE2U0JGUTg2M1E#gid=sharing Oxide Thickness uniformity 2014] |
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| − | *Deposition Rate: ≈ 28.36 nm/min |
+ | *Deposition Rate: ≈ 28.36 nm/min (users must calibrate this prior to critical deps) |
*Refractive Index: ≈ 1.473 |
*Refractive Index: ≈ 1.473 |
||
*Stress ≈ -256MPa |
*Stress ≈ -256MPa |
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Revision as of 19:00, 21 May 2014
PECVD 2 (Advanced Vacuum)
SiN deposition (PECVD #2)
- Deposition Rate: ≈ 8.29 nm/min (users must calibrate this prior to critical deps)
- Refractive Index: ≈ 1.955
- Stress ≈ 498MPa
- HF etch rate:~48nm/min
SiO2 deposition (PECVD #2)
- Deposition Rate: ≈ 28.36 nm/min (users must calibrate this prior to critical deps)
- Refractive Index: ≈ 1.473
- Stress ≈ -256MPa
- HF etch rate~582nm/min
LS SiN deposition (PECVD #2)
- Deposition Rate: ≈ 8.17 nm/min
- Refractive Index: ≈ 1.935
- Stress ≈ -0.04MPa
- HF etch rate~47nm/min