Difference between revisions of "OLD - PECVD2 Recipes"
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*Deposition Rate: ≈ 8.34 nm/min |
*Deposition Rate: ≈ 8.34 nm/min |
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*Refractive Index: ≈ 1.932 |
*Refractive Index: ≈ 1.932 |
||
| − | *Stress ≈ - |
+ | *Stress ≈ -46MPa |
== Amorphous-Si deposition (PECVD #2) == |
== Amorphous-Si deposition (PECVD #2) == |
||
Revision as of 09:41, 16 April 2014
PECVD 2 (Advanced Vacuum)
SiN deposition (PECVD #2)
- Nitride2 Standard Recipe
- Nitride2 Data (Deposition Rate, Refractive Index, Stress, HF etch rate)
- Nitride2 Data April 2014
- Nitride2 Thickness uniformity 2014
- Deposition Rate: ≈ 9.0 nm/min
- Refractive Index: ≈ 1.952
- Stress ≈ 484MPa
SiO2 deposition (PECVD #2)
- Oxide Standard Recipe
- Oxide Data (Deposition Rate, Refractive Index, Stress, HF etch rate )
- Oxide Data April 2014
- Oxide Thickness uniformity 2014
- Deposition Rate: ≈ 28.0 nm/min
- Refractive Index: ≈ 1.472
- Stress ≈ -270MPa
LS SiN deposition (PECVD #2)
- LS Nitride2 Standard Recipe
- LS Nitride2 Data (Deposition Rate, Refractive Index, Stress, HF etch rate )
- LS Nitride2 Data April 2014
- Deposition Rate: ≈ 8.34 nm/min
- Refractive Index: ≈ 1.932
- Stress ≈ -46MPa