Difference between revisions of "InP Etch Rate and Selectivity (InP/SiO2)"
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|InP Etch Rtae (mm/min) |
|InP Etch Rtae (mm/min) |
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|Selectivity (InP/SiO2) |
|Selectivity (InP/SiO2) |
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|4/26/2018 |
|4/26/2018 |
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Revision as of 10:32, 2 May 2018
| 1.4 mT, 125/800W, Cl2/H2/Ar flow-rate=6.3/12.7/2 sccm, chuck temperature=200 C, and etch time=90s (Prior to the etch, do O2 plasma chamber clean for 15 minutes, then, chamber coating with the same recipe and a quarter dummy InP on carrier for 15 minutes. | |||
| Date | Sample# | InP Etch Rtae (mm/min) | Selectivity (InP/SiO2) |
| 4/26/2018 | InP#1805 | 1.29 | 13.6 |
