Difference between revisions of "InP Etch Rate and Selectivity (InP/SiO2)"

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| colspan="3" |1.4 mT, 125/800W, Cl2/H2/Ar flow-rate=6.3/12.7/2 sccm, chuck temperature=200 C, and etch time=90s (Prior to the etch, do O2 plasma chamber clean for 15 minutes, then, chamber coating with the same recipe and a quarter dummy InP on carrier for 15 minutes.
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| colspan="4" |1.4 mT, 125/800W, Cl2/H2/Ar flow-rate=6.3/12.7/2 sccm, chuck temperature=200 C, and etch time=90s (Prior to the etch, do O2 plasma chamber clean for 15 minutes, then, chamber coating with the same recipe and a quarter dummy InP on carrier for 15 minutes.
 
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|Date 
  
|Date 
  +
|Sample#
 
|InP Etch Rtae (mm/min)
  
|InP Etch Rtae (mm/min)
 
|Selectivity (InP/SiO2)
  
|Selectivity (InP/SiO2)
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|-
  
−
|4/10/2018
  
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|1.12
  
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|12.8
  
 
|-
  
|-
 
|6/26/2018
  
|6/26/2018
  +
|InP#1805
 
|1.29
  
|1.29
 
|13.6
  
|13.6

Revision as of 10:20, 1 May 2018

1.4 mT, 125/800W, Cl2/H2/Ar flow-rate=6.3/12.7/2 sccm, chuck temperature=200 C, and etch time=90s (Prior to the etch, do O2 plasma chamber clean for 15 minutes, then, chamber coating with the same recipe and a quarter dummy InP on carrier for 15 minutes.
Date  Sample# InP Etch Rtae (mm/min) Selectivity (InP/SiO2)
6/26/2018 InP#1805 1.29 13.6
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