Difference between revisions of "ICP-PECVD (Unaxis VLR)"

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*Operating Instructions
 
*Operating Instructions
 
*[[Wafer Coating Process Traveler]]
 
*[[Wafer Coating Process Traveler]]
*Wafer Scanning process Traveler
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*[[Wafer Scanning process Traveler]]
  
 
== Recipes ==
 
== Recipes ==
 
You can find recipes for this tool on the Wiki > Recipes > [https://wiki.nanotech.ucsb.edu/wiki/PECVD_Recipes#ICP-PECVD_.28Unaxis_VLR.29 PECVD Recipes page]
 
You can find recipes for this tool on the Wiki > Recipes > [https://wiki.nanotech.ucsb.edu/wiki/PECVD_Recipes#ICP-PECVD_.28Unaxis_VLR.29 PECVD Recipes page]

Revision as of 08:13, 20 April 2020

ICP-PECVD (Unaxis VLR)
UnaxisPECVD.jpg
Tool Type Vacuum Deposition
Location Bay 1
Supervisor Tony Bosch
Supervisor Phone (805) 893-3486
Supervisor E-Mail bosch@ece.ucsb.edu
Description High Density ICP PECVD
Manufacturer Unaxis
Vacuum Deposition Recipes
Sign up for this tool


About

This system is configured as an ICP PECVD deposition tool with 1000 W ICP power, 600 W RF substrate power, and 50°C-350°C operation. This chamber has 100% SiH4, N2, O2, and Ar for gas sources. The high density PECVD produces a more dense, higher quality SiO2 and Si3N4, as compared with conventional PECVD. With the high density plasma, deposition of high quality films can be deposited as low as 50°C for processes requiring lower temperatures. Stress compensation for silicon nitride is characterized.

Cluster Configuration

A Deposition and Etch chamber are both attached to the same loadlock, allowing etching and deposition without breaking vacuum. Each chamber can be scheduled separately on SignupMonkey.

Detailed Specifications

  • 1000W ICP source, 600W RF Sample Bias Power Supply
  • 50 - 350°C sample temperature
  • 100% SiH4, Ar, N2, O2
  • Multiple 4” diameter wafer capable system
  • Pieces possible by mounting or placing on 4 ” wafer

Documentation

Recipes

You can find recipes for this tool on the Wiki > Recipes > PECVD Recipes page