Difference between revisions of "E-Beam 1 (Sharon)"

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{{tool|{{PAGENAME}}
+
{{tool2|{{PAGENAME}}
 
|picture=e-beam1.jpg
 
|picture=e-beam1.jpg
 
|type = Vacuum Deposition
 
|type = Vacuum Deposition
|super= Brian Lingg
+
|super= Michael Barreraz
|phone=(805)839-3918x210
+
|super2= Bill Millerski
 +
|phone=(805)839-7975
 
|location=Bay 3
 
|location=Bay 3
|email=lingg@ece.ucsb.edu
+
|email=mikebarreraz@ece.ucsb.edu
 
|description = Four Pocket Electron Beam Evaporator
 
|description = Four Pocket Electron Beam Evaporator
 
|manufacturer = Sharon Vacuum Co., Inc.
 
|manufacturer = Sharon Vacuum Co., Inc.
 
|toolid=7
 
|toolid=7
 
}}
 
}}
= About =
+
[[File:EBEAM1 Controls Sept2022.jpeg|thumb|EBeam#1]]
 +
 
 +
=About=
 
   
 
   
The Sharon is a cryo-pumped thin film evaporator with a Temescal four hearth 270° bent beam evaporation source. The system incorporates a Commonwealth Scientific Corp. ion source for in-situ sample cleaning. Fixturing in the Sharon will accept any size sample up to 3.5-inch diameter. In addition, a rotation fixture is easily installed which permits adjustable angle, 360° variable speed rotation of any size sample, up to 1.5-inch diameter. This feature is particularly useful for promoting step coverage of irregular surfaces.  
+
The Sharon is a cryo-pumped thin film evaporator with a Temescal four hearth 270° bent electron beam evaporation source. The system incorporates a Commonwealth Scientific Corp. ion source for in-situ sample cleaning. Fixturing in the Sharon will accept any size sample up to 3.5-inch diameter. In addition, a rotation fixture is easily installed which permits adjustable angle, 360° variable speed rotation of any size sample, up to 1.5-inch diameter. This feature is particularly useful for promoting step coverage of irregular surfaces.
 +
 
 +
A new fixture allowing up to four - 4" diameter wafers is now installed.  
  
 
The Sharon is used for the evaporation of high purity metals, e.a. Al, Au, Ni, Ge, AuGe, Ti, Pt etc., for interconnect and ohmic contact metalization for fabrication of III-V compound semiconductor and silicon device fabrication.  
 
The Sharon is used for the evaporation of high purity metals, e.a. Al, Au, Ni, Ge, AuGe, Ti, Pt etc., for interconnect and ohmic contact metalization for fabrication of III-V compound semiconductor and silicon device fabrication.  
  
= Materials Table =
+
=Detailed Specifications=
 +
 
 +
*Cryopump: CTI Cryotorr 8F with air-cooled compressor
 +
*Pumping speed: 4,000 l/sec. for H2O, 1,500 l/sec. for air, 2,200 l/sec. for H2, 200 l/sec. for Ar
 +
*Mechanical Pump: Ebara EV-A10, 35 CFM
 +
*Electron Beam Source: Temescal, Model STIH-270-2MB, four 15 cc hearths
 +
*Electron Beam Power Supply: Temescal, Model CV-6SLX, 0 - 10 kV dc, 0–600 mA dc beam current; TemEBeam Sweep Control
 +
*Deposition Control: : Inficon IC/5, 6 film programs; 37 parameters for automatic or manual deposition control based on a resonating quartz crystal sensor
 +
*Ion Source: Commonwealth Scientific Corp., MOD. 2. Kaufman-type, 3cm ion source; beam currents to 100mA at 1000eV
 +
*Pieces up to Four - 4" wafers in one run.
 +
*For single wafers: tilt with motorized rotation and sample lowering for higher effective rates, sidewall coverage, angled evaporation.
  
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center; font-size: 95%" class="collapsible collapsed wikitable"
+
=Documentation=
|-
 
! colspan=8 width=1100 height=35 bgcolor="#D0E7FF" align="center"|<div style="font-size: 150%;">Materials Table</div>
 
|- bgcolor="#D0E7FF"
 
! width="75" bgcolor="#D0E7FF" align="center" | '''Material'''
 
! width="75" bgcolor="#D0E7FF" align="center" | '''Position'''
 
! width="75" bgcolor="#D0E7FF" align="center" | '''Hearth / Crucible'''
 
! width="85" bgcolor="#D0E7FF" align="center" | '''Film Number'''
 
! width="75" bgcolor="#D0E7FF" align="center" | '''Density'''
 
! width="75" bgcolor="#D0E7FF" align="center" | '''Z Ratio'''
 
! width="75" bgcolor="#D0E7FF" align="center" | '''Tooling'''
 
! width="500" bgcolor="#D0E7FF" align="center" | '''Comments'''
 
|-
 
| Ag
 
| 4
 
| C
 
| 5
 
| 10.5
 
| 0.524
 
| 140
 
| Brian, could you please check this table? Z ratio should be 0.529
 
|-
 
| Al
 
| 2
 
| C
 
| 6
 
| 2.7
 
| 1.080
 
| 118
 
|
 
|-
 
| Al<sub>2</sub>O<sub>3</sub>
 
| 1
 
| C
 
| 6
 
| 3.97
 
| 0.50
 
| 169
 
| Z-ratio should be 0.336
 
|-
 
| Au
 
| 4
 
| C
 
| 4
 
| 19.3
 
| 0.381
 
| 138
 
| Bazookas can be used at 20-30Å/sec.
 
|-
 
| AuGe
 
| 3
 
| C
 
| 5
 
| 17.63
 
| 0.397
 
| 151
 
| Composition unpredictable unless you practically empty the crucible.
 
|-
 
| Cr
 
| 3
 
| H
 
| 6
 
| 7.2
 
| 0.305
 
| 140
 
| Do not evaporate more than 200Å of Cr in the E-Beam evaporator.
 
|-
 
| Fe
 
|
 
|
 
|
 
| 7.86
 
| 0.349
 
|
 
|
 
|-
 
| Ge
 
| 3
 
| C
 
| 6
 
| 5.35
 
| 0.516
 
| 130
 
|
 
|-
 
| MgO
 
| 1
 
|
 
| 6
 
| 3.58
 
| 0.411
 
|
 
|
 
|-
 
| Mo
 
|
 
|
 
|
 
| 10.2
 
| 0.257
 
|
 
|
 
|-
 
| Ni
 
| 1
 
| H
 
| 1
 
| 8.91
 
| 0.331
 
| 140
 
| Prone to spitting. Cool down for 15 minutes before venting.
 
|-
 
| NiCr
 
| 1
 
| H
 
| 6
 
| 8.23
 
| 0.321
 
|
 
| Density 8.5, z ratio 0.3258
 
|-
 
| Nb
 
| 4
 
| C
 
| 6
 
| 8.57
 
| 0.516 ( should be 0.492)
 
|
 
| Cool down for at least 35 minutes before venting.
 
|-
 
| Pd
 
| 1
 
| H
 
| 9
 
| 12.0
 
| 0.357
 
| 140
 
|
 
|-
 
| Pt
 
| 1
 
| C
 
| 8
 
| 21.40
 
| 0.245
 
| 140
 
| Prone to spitting. Evaporate at 1.5Å/sec or less.
 
|-
 
| Si
 
| 2
 
| H
 
| 2
 
| 2.32
 
| 0.712
 
| 150
 
| Cool down very slowly after evaporating lest you crack the source.
 
|-
 
| SiO
 
|
 
| C
 
| 6
 
| 2.13
 
| 0.87
 
| 132
 
|
 
|-
 
| SiO<sub>2</sub>
 
| 1
 
| C
 
| 6
 
| 2.2 ( should be 2.648)
 
| 1.07 ( should be 1.000)
 
| 140
 
| Please change the crystal and the upper mirror after evaporating oxide.
 
|-
 
| SrF<sub>2</sub>
 
| 1
 
| C
 
| 6
 
| 4.28
 
| 0.727
 
| 140
 
|
 
|-
 
| Ta
 
| 1
 
| H
 
| 6
 
| 16.6
 
| 0.262
 
|
 
| Requires extremely high current. Minimum 35 minute cool down. Hearth #3 may be used. Call me before you try Ta.
 
|-
 
| W
 
| 1
 
| C
 
| 6
 
| 19.3
 
| 0.163
 
| 138
 
|
 
|-
 
| Ti
 
| 3
 
| H
 
| 3
 
| 4.50
 
| 0.628
 
| 139
 
|
 
|}
 
  
= Detailed Specifications =
+
*[https://wiki.nanotech.ucsb.edu/w/images/9/90/EB-1_operation_instructions_rev2.pdf Operating Instructions]
*Cryopump: CTI Cryotorr 8F with air-cooled compressor
+
 
*Pumping speed: 4,000 l/sec. for H2O, 1,500 l/sec. for air, 2,200 l/sec. for H2, 200 l/sec. for Ar
+
=Recipes=
*Mechanical Pump: Varian, Model SD700, 35 CFM
+
 
*Electron Beam Source: Temescal, Model STIH-270-2MB, four 15 cc hearths
+
*See the [[E-Beam_Evaporation_Recipes#Materials_Table_(E-Beam #1)|'''<u>E-Beam Recipe Page</u>''']], for the materials tables and deposition parameters for various materials.
*Electron Beam Power Supply: Temescal, Model CV8A-111, -5 to -10 kV dc, 0.8A dc max. beam current; XYS-8 Sweep Control
 
*Deposition Control: Inficon IC 6000, 6 film programs; 37 parameters for automatic or manual deposition control based on a resonating quartz crystal sensor
 
*Ion Source: Commonwealth Scientific Corp., MOD. 2. Kaufman-type, 3cm ion source; beam currents to 100mA at 1000eV
 

Latest revision as of 10:25, 8 September 2022

E-Beam 1 (Sharon)
E-beam1.jpg
Location Bay 3
Tool Type Vacuum Deposition
Manufacturer Sharon Vacuum Co., Inc.
Description Four Pocket Electron Beam Evaporator

Primary Supervisor Michael Barreraz
(805) 893-4147
mikebarreraz@ece.ucsb.edu

Secondary Supervisor

Bill Millerski


Recipes Vacuum Deposition RecipesN/A

SignupMonkey: Sign up for this tool


EBeam#1

About

The Sharon is a cryo-pumped thin film evaporator with a Temescal four hearth 270° bent electron beam evaporation source. The system incorporates a Commonwealth Scientific Corp. ion source for in-situ sample cleaning. Fixturing in the Sharon will accept any size sample up to 3.5-inch diameter. In addition, a rotation fixture is easily installed which permits adjustable angle, 360° variable speed rotation of any size sample, up to 1.5-inch diameter. This feature is particularly useful for promoting step coverage of irregular surfaces.

A new fixture allowing up to four - 4" diameter wafers is now installed.

The Sharon is used for the evaporation of high purity metals, e.a. Al, Au, Ni, Ge, AuGe, Ti, Pt etc., for interconnect and ohmic contact metalization for fabrication of III-V compound semiconductor and silicon device fabrication.

Detailed Specifications

  • Cryopump: CTI Cryotorr 8F with air-cooled compressor
  • Pumping speed: 4,000 l/sec. for H2O, 1,500 l/sec. for air, 2,200 l/sec. for H2, 200 l/sec. for Ar
  • Mechanical Pump: Ebara EV-A10, 35 CFM
  • Electron Beam Source: Temescal, Model STIH-270-2MB, four 15 cc hearths
  • Electron Beam Power Supply: Temescal, Model CV-6SLX, 0 - 10 kV dc, 0–600 mA dc beam current; TemEBeam Sweep Control
  • Deposition Control: : Inficon IC/5, 6 film programs; 37 parameters for automatic or manual deposition control based on a resonating quartz crystal sensor
  • Ion Source: Commonwealth Scientific Corp., MOD. 2. Kaufman-type, 3cm ion source; beam currents to 100mA at 1000eV
  • Pieces up to Four - 4" wafers in one run.
  • For single wafers: tilt with motorized rotation and sample lowering for higher effective rates, sidewall coverage, angled evaporation.

Documentation

Recipes

  • See the E-Beam Recipe Page, for the materials tables and deposition parameters for various materials.