Difference between revisions of "DS-K101-304 Bake Temp. versus Develop Rate"
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(added data from email form Sean Demura) |
(courtesy brian burkett (omit Google)) |
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All wafers were spun at 1.5krpm and baked for 60s at various temperatures (200C, 210C, 220C). |
All wafers were spun at 1.5krpm and baked for 60s at various temperatures (200C, 210C, 220C). |
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|+Develop rates in AZ 300MiF |
|+Develop rates in AZ 300MiF |
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!Bake Temp |
!Bake Temp |
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| − | !Bake Time |
+ | !Bake Time |
!Develop Rate |
!Develop Rate |
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|~0.1 nm/min |
|~0.1 nm/min |
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| − | ''Courtesy |
+ | ''Courtesy Brian Burkett, 2019'' |
Revision as of 07:42, 17 September 2019
Conditions
All wafers were spun at 1.5krpm and baked for 60s at various temperatures (200C, 210C, 220C).
Checked thickness on the ellipsometer, developed in 300MIF for 30s and check thickness again.
| Bake Temp | Bake Time | Develop Rate |
|---|---|---|
| 200°C | 60 sec | ~20 nm/min |
| 210°C | 60 sec | ~3 nm/min |
| 220°C | 60 sec | ~0.1 nm/min |
Courtesy Brian Burkett, 2019